公开(公告)号：US20140268524A1

公开(公告)日：2014-09-18

申请号：US14207477

申请日：2014-03-12

Applicant: BISHNU PRASANNA GOGOI

Inventor： BISHNU PRASANNA GOGOI

IPC: H05K7/02

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: A distributed sensor system is disclosed that provides spatial and temporal data in an operating environment. The distributed sensor nodes can be coupled together to form a distributed sensor system. For example, a distributed sensor system comprises a collection of Sensor Nodes (SN) that are physically coupled and are able to collect data about the environment in a distributed manner. An example of a distributed sensor system comprises a first sensor node and a second sensor node. Each sensor node has a plurality of sensors or a MIMS device. Each sensor node can also include electronic circuitry or a power source. A joint region is coupled between a first flexible interconnect region and a second flexible interconnect region. The first sensor node is coupled to the first flexible interconnect region. Similarly, the second sensor node is coupled to the second flexible interconnect region.

Abstract translation: 公开了一种在操作环境中提供空间和时间数据的分布式传感器系统。 分布式传感器节点可以耦合在一起以形成分布式传感器系统。 例如，分布式传感器系统包括物理耦合并且能够以分布式方式收集关于环境的数据的传感器节点（SN）的集合。 分布式传感器系统的示例包括第一传感器节点和第二传感器节点。 每个传感器节点具有多个传感器或MIMS装置。 每个传感器节点还可以包括电子电路或电源。 联接区域耦合在第一柔性互连区域和第二柔性互连区域之间。 第一传感器节点耦合到第一柔性互连区域。 类似地，第二传感器节点耦合到第二柔性互连区域。

公开(公告)号：US20140264658A1

公开(公告)日：2014-09-18

申请号：US14207433

申请日：2014-03-12

Applicant: BISHNU PRASANNA GOGOI

Inventor： BISHNU PRASANNA GOGOI

IPC: H01L27/02 ,  H01L27/16

CPC classification number: B81B7/02 ,  B81B2201/0207 ,  B81B2201/0214 ,  B81B2201/0228 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81B2207/012 ,  B81B2207/05 ,  B81B2207/09 ,  H01L27/14 ,  H01L27/16 ,  H01L27/22 ,  H01L41/1132 ,  H01L41/1138 ,  H01L2924/00 ,  H05K7/02

Abstract: A cell phone is provided having multiple sensors configured to detect and measure different parameters of interest. The cell phone includes at least one monolithic integrated multi-sensor (MIMS) device. The MIMS device comprises at least two sensors of different types formed on a common semiconductor substrate. For example, the MIMS device can comprise an indirect sensor and a direct sensor. The cell phone couples a first parameter to be measured directly to the direct sensor. Conversely, the cell phone can couple a second parameter to be measured to the indirect sensor indirectly. Other sensors can be added to the cell phone by stacking a sensor to the MIMS device or to another substrate coupled to the MIMS device. This supports integrating multiple sensors such as a microphone, an accelerometer, and a temperature sensor to reduce cost, complexity, simplify assembly, while increasing performance.

Abstract translation: 提供了具有多个传感器的蜂窝电话，该传感器被配置为检测和测量不同的感兴趣的参数。 手机包括至少一个单片集成多传感器（MIMS）装置。 MIMS器件包括形成在公共半导体衬底上的至少两种不同类型的传感器。 例如，MIMS装置可以包括间接传感器和直接传感器。 手机将要直接测量的第一个参数耦合到直接传感器。 相反，手机可以间接地将待测量的第二参数耦合到间接传感器。 可以通过将传感器堆叠到MIMS装置或耦合到MIMS装置的另一基板上而将其它传感器添加到手机。 这支持集成多个传感器，如麦克风，加速度计和温度传感器，以降低成本，复杂性，简化组装，同时提高性能。

公开(公告)号：US20130277777A1

公开(公告)日：2013-10-24

申请号：US13450223

申请日：2012-04-18

Applicant: Chang-Chia Chang ,  Chen-Chih Fan ,  Bruce C.S. Chou

Inventor： Chang-Chia Chang ,  Chen-Chih Fan ,  Bruce C.S. Chou

IPC: H01L21/58 ,  H01L29/84

CPC classification number: B81C1/00269 ,  B81B3/0018 ,  B81B3/0067 ,  B81B3/007 ,  B81B7/00 ,  B81B7/0006 ,  B81B7/0016 ,  B81B7/0029 ,  B81B7/0041 ,  B81B7/0051 ,  B81B7/0058 ,  B81B2201/0228 ,  B81B2201/0235 ,  B81B2201/025 ,  B81B2207/07 ,  B81B2207/096 ,  B81C1/00 ,  B81C1/00293 ,  B81C1/00325 ,  B81C2203/0118

Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure above a first substrate. The MEMS structure comprising a central static element, a movable element, and an outer static element. A portion of bonding material between the central static element and the first substrate. A second substrate above the MEMS structure, with a portion of a dielectric layer between the central static element and the second substrate. A supporting post comprises the portion of bonding material, the central static element, and the portion of dielectric material.

Abstract translation: 微机电系统（MEMS）装置可以包括在第一衬底上方的MEMS结构。 MEMS结构包括中心静态元件，可移动元件和外部静态元件。 在中心静电元件和第一衬底之间的一部分接合材料。 在MEMS结构上方的第二衬底，在中心静态元件和第二衬底之间具有介电层的一部分。 支撑柱包括接合材料部分，中心静电元件和介电材料部分。

公开(公告)号：US07273764B2

公开(公告)日：2007-09-25

申请号：US11028370

申请日：2005-01-03

Applicant: Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

Inventor： Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

IPC: H01L21/00

CPC classification number: B81C1/00293 ,  B81B2201/0228 ,  B81B2207/095 ,  B81C2201/0115 ,  B81C2203/0136 ,  B81C2203/0145

Abstract: The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor. It is provided that in the sensor of the invention, the covering (13) comprises a first layer (32) (deposition layer) that is permeable to an etching medium and the reaction products, and a hermetically sealing second layer (34) (sealing layer) located above it, and that in the method of the invention, at least the sensor chamber (28) present in the foundation wafer (11) after the establishment of the structure (26) is filled with an oxide (30), in particular CVD oxide or porous oxide; the sensor chamber (28) is covered by a first layer (32) (deposition layer), in particular of polysilicon, that is transparent to an etching medium and the reaction products or is retroactively made transparent; the oxide (30) in the sensor chamber (28) is removed through the deposition layer (32) with the etching medium; and next, a second layer (34) (sealing layer), in particular of metal or an insulator, is applied to the deposition layer (32) and hermetically seals off the sensor chamber (28).

Abstract translation: 本发明涉及具有至少一个硅基微机械结构的传感器，其与基础晶片的传感器室结合，并且在传感器室的区域中具有覆盖基础晶片的至少一个覆盖物，以及至少一个 传感器的制造方法 设置在本发明的传感器中，覆盖物（13）包括可蚀刻介质和反应产物的第一层（沉积层）和密封的第二层（34）（密封 层），并且在本发明的方法中，在建立结构（26）之后，至少存在于基础晶片（11）中的传感器室（28）填充有氧化物（30），其中 特定的CVD氧化物或多孔氧化物; 传感器室（28）由对蚀刻介质和反应产物透明的或者具有回溯性的透明的第一层（32）（沉积层）（特别是多晶硅）覆盖; 传感器室（28）中的氧化物（30）通过蚀刻介质通过沉积层（32）去除; 接下来，将特别是金属或绝缘体的第二层（34）（密封层）施加到沉积层（32）并气密地密封传感器室（28）。

公开(公告)号：US20040065932A1

公开(公告)日：2004-04-08

申请号：US10168584

申请日：2002-10-03

Inventor： Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

IPC: H01L021/00 ,  H01L029/82

CPC classification number: B81C1/00293 ,  B81B2201/0228 ,  B81B2207/095 ,  B81C2201/0115 ,  B81C2203/0136 ,  B81C2203/0145

Abstract: The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor. It is provided that in the sensor of the invention, the covering (13) comprises a first layer (32) (deposition layer) that is permeable to an etching medium and the reaction products, and a hermetically sealing second layer (34) (sealing layer) located above it, and that in the method of the invention, at least the sensor chamber (28) present in the foundation wafer (11) after the establishment of the structure (26) is filled with an oxide (30), in particular CVD oxide or porous oxide; the sensor chamber (28) is covered by a first layer (32) (deposition layer), in particular of polysilicon, that is transparent to an etching medium and the reaction products or is retroactively made transparent; the oxide (30) in the sensor chamber (28) is removed through the deposition layer (32) with the etching medium; and next, a second layer (34) (sealing layer), in particular of metal or an insulator, is applied to the deposition layer (32) and hermetically seals off the sensor chamber (28).

Abstract translation: 本发明涉及具有至少一个硅基微机械结构的传感器，其与基础晶片的传感器室结合，并且在传感器室的区域中具有覆盖基础晶片的至少一个覆盖物，以及至少一个 传感器的制造方法 设置在本发明的传感器中，覆盖物（13）包括可蚀刻介质和反应产物的第一层（沉积层）和密封的第二层（34）（密封 层），并且在本发明的方法中，在建立结构（26）之后，至少存在于基础晶片（11）中的传感器室（28）填充有氧化物（30），其中 特定的CVD氧化物或多孔氧化物; 传感器室（28）由对蚀刻介质和反应产物透明的或者具有回溯性的透明的第一层（32）（沉积层）（特别是多晶硅）覆盖; 传感器室（28）中的氧化物（30）通过蚀刻介质通过沉积层（32）去除; 接下来，将特别是金属或绝缘体的第二层（34）（密封层）施加到沉积层（32）并气密地密封传感器室（28）。

公开(公告)号：US06528724B1

公开(公告)日：2003-03-04

申请号：US09889424

申请日：2001-10-19

Applicant: Yukihisa Yoshida ,  Martial Chabloz ,  Jiwei Jiao ,  Tsukasa Matsuura ,  Kazuhiko Tsutsumi

Inventor： Yukihisa Yoshida ,  Martial Chabloz ,  Jiwei Jiao ,  Tsukasa Matsuura ,  Kazuhiko Tsutsumi

IPC: H01L2302

CPC classification number: G01P15/125 ,  B81B2201/0228 ,  B81B2203/0136 ,  B81C1/0015 ,  B81C1/00579 ,  G01P1/023 ,  G01P15/0802 ,  G01P2015/0814 ,  Y10T29/49002 ,  Y10T29/49117

Abstract: A micro device including an insulating substrate having a recess formed on a surface, and a beam-like silicon structure on the front surface of the insulating substrate surrounding the recess. The beam-like structure includes at least one functional section, and the functional section has a supporting section bonded to the insulating substrate and at least one cantilever integral with the supporting section and extending across the recess. The micro device also has an electrically conductive film electrically connected to the supporting section, on the surface of the recess at least directly under a cantilever. The electrically conductive film prevents the surface of the recess from being positively charged in the dry etching process. Thus, an etching gas having a positive charge is not subjected to electrical repulsion from the recess and does not impinge on the back surface of the silicon substrate, and therefore erosion of the cantilever does not occur. As a result, since the beam-like structure is formed with high accuracy in shape and dimensions, the micro device has improved reliability and an improved degree of freedom in design.

Abstract translation: 一种微型器件，包括具有形成在表面上的凹部的绝缘基板和围绕凹部的绝缘基板的前表面上的梁状硅结构。 梁状结构包括至少一个功能部分，并且功能部分具有结合到绝缘基板的支撑部分和与支撑部分一体并延伸穿过凹部的至少一个悬臂。 微型装置还具有导电膜，该导电膜电连接到支撑部分，至少在悬臂下方的凹部的表面上。 在干蚀刻工艺中，导电膜防止凹部的表面带正电。 因此，具有正电荷的蚀刻气体不会受到来自凹部的电斥力，并且不会撞击到硅衬底的背面，因此不会发生悬臂的侵蚀。 结果，由于在形状和尺寸方面形成了高度精确的束状结构，所以微型器件具有提高的可靠性和改进的设计自由度。