公开(公告)号：US08088551B2

公开(公告)日：2012-01-03

申请号：US12248219

申请日：2008-10-09

Applicant: Scott Sills ,  Dan Millward

Inventor： Scott Sills ,  Dan Millward

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/40

CPC classification number: G03F7/40 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  G03F7/0392 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/10 ,  H01L27/115

Abstract: Some embodiments include methods of forming patterns in which a block copolymer-containing composition is formed over a substrate, and is then patterned to form a first mask. The block copolymer of the composition is subsequently induced into forming a repeating pattern within the first mask. Portions of the repeating pattern are then removed to form a second mask from the first mask. The patterning of the block copolymer-containing composition may utilize photolithography. Alternatively, the substrate may have regions which wet differently relative to one another with respect to the block copolymer-containing composition, and the patterning of the first mask may utilize such differences in wetting in forming the first mask.

Abstract translation: 一些实施方案包括形成图案的方法，其中在基底上形成含嵌段共聚物的组合物，然后将其图案化以形成第一掩模。 随后将组合物的嵌段共聚物在第一掩模内诱​​导形成重复图案。 然后去除重复图案的部分以从第一掩模形成第二掩模。 含嵌段共聚物的组合物的图案化可以利用光刻法。 或者，基底可以具有相对于含嵌段共聚物的组合物相对于彼此不同地湿润的区域，并且第一掩模的图案化可以在形成第一掩模时在润湿中使用这种差异。

公开(公告)号：US20110312185A1

公开(公告)日：2011-12-22

申请号：US13051788

申请日：2011-03-18

Applicant: Yuriko SEINO

Inventor： Yuriko SEINO

IPC: H01L21/3105 ,  B05C13/02

CPC classification number: H01L21/0337 ,  B81C1/00031 ,  B81C2201/0149

Abstract: According to one embodiment, a pattern formation method includes: forming a first pattern in a first region on a substrate to be treated; coating a plurality of types of block copolymers which are different in composition ratio on a second region which is different from the first region; and forming in the second region, by a heat treatment, a second pattern including a plurality of types of structures based on the coated plurality of types of block copolymers.

Abstract translation: 根据一个实施例，图案形成方法包括：在待处理的基板上的第一区域中形成第一图案; 在不同于第一区域的第二区域上涂覆组成比不同的多种类型的嵌段共聚物; 以及通过热处理在所述第二区域中形成包含基于所述涂覆的多种类型的嵌段共聚物的多种类型的结构的第二图案。

公开(公告)号：US08071467B2

公开(公告)日：2011-12-06

申请号：US12755672

申请日：2010-04-07

Applicant: Dan Millward ,  Scott Sills

Inventor： Dan Millward ,  Scott Sills

IPC: H01L21/3205

CPC classification number: H01L21/0337 ,  B81B2207/056 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/32139 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/78

Abstract: Some embodiments include methods of forming patterns in substrates by utilizing block copolymer assemblies as patterning materials. A block copolymer assembly may be formed over a substrate, with the assembly having first and second subunits arranged in a pattern of two or more domains. Metal may be selectively coupled to the first subunits relative to the second subunits to form a pattern of metal-containing regions and non-metal-containing regions. At least some of the block copolymer may be removed to form a patterned mask corresponding to the metal-containing regions. A pattern defined by the patterned mask may be transferred into the substrate with one or more etches. In some embodiments, the patterning may be utilized to form integrated circuitry, such as, for example, gatelines.

Abstract translation: 一些实施方案包括通过利用嵌段共聚物组合物作为图案形成材料在衬底中形成图案的 可以在衬底上形成嵌段共聚物组件，其中组件具有以两个或多个畴的图案排列的第一和第二子单元。 金属可以相对于第二子单元选择性地耦合到第一子单元，以形成含金属的区域和非含金属的区域的图案。 可以除去至少一些嵌段共聚物以形成对应于含金属的区域的图案化掩模。 由图案化掩模限定的图案可以用一个或多个蚀刻转移到基板中。 在一些实施例中，图案化可以用于形成集成电路，例如，电视线。

公开(公告)号：US07999160B2

公开(公告)日：2011-08-16

申请号：US11690295

申请日：2007-03-23

Applicant: Joy Cheng ,  Ho-Cheol Kim ,  Robert D. Miller

Inventor： Joy Cheng ,  Ho-Cheol Kim ,  Robert D. Miller

IPC: B05D3/06 ,  B32B3/30 ,  B82B3/00

CPC classification number: B29D22/00 ,  B33Y10/00 ,  B33Y80/00 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  C08L53/00 ,  G03F7/0002 ,  Y10S977/70 ,  Y10S977/701 ,  Y10S977/712 ,  Y10S977/788 ,  Y10S977/932 ,  Y10T428/1393 ,  Y10T428/24132 ,  Y10T428/249921 ,  C08L2666/02 ,  C08L2666/24

Abstract: A method. A first copolymer is provided. A substrate is provided having an energetically neutral surface layer with at least one trough integrally disposed thereon with sidewalls. A first film of the first copolymer is coated inside the trough. Line-forming microdomains are assembled of the first copolymer forming first self-assembled structures within the first film normal to the sidewalls and parallel to the surface layer. The first and second polymer blocks are removed from the first film and oriented structures remain in the trough normal to the sidewalls and parallel to the surface layer. A second film of a second copolymer is coated inside the trough. Line-forming microdomains are assembled of the second copolymer, and form second self-assembled structures within the second film oriented normal to the oriented structures and parallel to the sidewalls. The third and fourth polymer blocks are removed, and at least one second oriented structure remains.

Abstract translation: 一个方法。 提供第一共聚物。 提供具有能量中性的表面层的基底，其中至少一个槽与其一体地设置有侧壁。 第一共聚物的第一膜涂覆在槽内。 线形成微区由第一共聚物组装，该第一共聚物在垂直于侧壁的第一膜内平行于表面层形成第一自组装结构。 第一和第二聚合物嵌段从第一膜去除，并且取向结构保持在垂直于侧壁并平行于表面层的槽中。 第二共聚物的第二膜涂覆在槽内。 线形成微区由第二共聚物组装，并且在第二膜中形成第二自组装结构，该结构定向成垂直于取向结构并平行于侧壁。 去除第三和第四聚合物嵌段，并保留至少一个第二取向结构。

公开(公告)号：US20110059299A1

公开(公告)日：2011-03-10

申请号：US12554175

申请日：2009-09-04

Applicant: Ho-Cheol Kim ,  Sang-min Park ,  Charles T. Rettner

Inventor： Ho-Cheol Kim ,  Sang-min Park ,  Charles T. Rettner

IPC: B32B3/00 ,  B05D3/02 ,  B44C1/22

CPC classification number: H01L29/0657 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  Y10T428/24479 ,  Y10T428/24521 ,  Y10T428/2457 ,  Y10T428/24612 ,  Y10T428/24802

Abstract: A method of forming a block copolymer pattern comprises providing a substrate comprising a topographic pre-pattern comprising a ridge surface separated by a height, h, greater than 0 nanometers from a trench surface; disposing a block copolymer comprising two or more block components on the topographic pre-pattern to form a layer having a thickness of more than 0 nanometers over the ridge surface and the trench surface; and annealing the layer to form a block copolymer pattern having a periodicity of the topographic pre-pattern, the block copolymer pattern comprising microdomains of self-assembled block copolymer disposed on the ridge surface and the trench surface, wherein the microdomains disposed on the ridge surface have a different orientation compared to the microdomains disposed on the trench surface.

Abstract translation: 形成嵌段共聚物图案的方法包括提供包括地形预图案的基材，所述地貌预图案包括从沟槽表面分开高度h，大于0纳米的脊表面; 在所述地形预图案上设置包含两个或更多个嵌段组分的嵌段共聚物，以在所述脊表面和所述沟槽表面上形成厚度大于0纳米的层; 并退火所述层以形成具有所述地形预图案的周期性的嵌段共聚物图案，所述嵌段共聚物图案包括设置在所述脊表面上的自组装嵌段共聚物的微区域和所述沟槽表面，其中所述微区域设置在所述脊表面上 与设置在沟槽表面上的微区域相比具有不同的取向。

公开(公告)号：US20110039061A1

公开(公告)日：2011-02-17

申请号：US12707129

申请日：2010-02-17

Applicant: Theodore H. Fedynyshyn ,  Richard Kingsborough

Inventor： Theodore H. Fedynyshyn ,  Richard Kingsborough

IPC: B32B7/00 ,  G03F7/20 ,  B32B3/00

CPC classification number: G03F7/165 ,  B81C1/00031 ,  B81C2201/0149 ,  B81C2201/0198 ,  G03F7/0755 ,  G03F7/265 ,  H01L21/0337

Abstract: Methods of directing assembly of materials using a surface-modified substrate are disclosed. A modified surface is created on a substrate by applying a first surface agent to the substrate. Energy is applied to the modified surface to form an imaged surface having an imaged portion and a non-imaged portion. The imaged portion is characterized by a surface energy that is different from the surface energy of the non-imaged portion. For example, the applied energy can remove at least a portion of an attached surface agent from the imaged portion to modify the surface energy. In some preferred embodiments the energy also modifies the surface agent without causing oxidation. To avoid oxidation, for example, the surface modification and/or energy appliement can take place in a low oxygen environment (e.g., having an oxygen content lower than that present in about 0.01 Torr of air). The imaged surface can then be exposed to a self assembling material, such as a block copolymer, such that the surface can direct assembly of the self assembling material by preferential attachment of certain moieties of the block copolymer to imaged or non-imaged portions of the surface in order to form a selected pattern.

Abstract translation: 公开了使用表面改性基材引导材料组装的方法。 通过向基材施加第一表面剂，在基材上形成改性表面。 将能量施加到改性表面以形成具有成像部分和非成像部分的成像表面。 成像部分的特征在于与非成像部分的表面能不同的表面能。 例如，施加的能量可以从成像部分去除附着的表面剂的至少一部分，以改变表面能。 在一些优选的实施方案中，能量还可以改变表面剂而不引起氧化。 为了避免氧化，例如，表面改性和/或能量施加可以在低氧环境中发生（例如，氧含量低于大约0.01Torr空气中的氧含量）。 成像的表面然后可以暴露于自组装材料，例如嵌段共聚物，使得表面可以通过优先将嵌段共聚物的某些部分附着到成像或非成像部分上来引导自组装材料的组装 表面以形成选定的图案。

公开(公告)号：US20100294740A1

公开(公告)日：2010-11-25

申请号：US12468391

申请日：2009-05-19

Applicant: Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Charles Rettner ,  Daniel P. Sanders

Inventor： Joy Cheng ,  Kafai Lai ,  Wai-Kin Li ,  Young-Hye Na ,  Charles Rettner ,  Daniel P. Sanders

IPC: H01B13/00 ,  B05D7/24 ,  B05D3/00

CPC classification number: B81C1/00031 ,  B81C1/00404 ,  B81C2201/0149 ,  H01L21/0337 ,  H01L21/31144

Abstract: An opening in a substrate is formed, e.g., using optical lithography, with the opening having sidewalls whose cross section is given by segments that are contoured and convex. The cross section of the opening may be given by overlapping circular regions, for example. The sidewalls adjoin at various points, where they define protrusions. A layer of polymer including a block copolymer is applied over the opening and the substrate, and allowed to self-assemble. Discrete, segregated domains form in the opening, which are removed to form holes, which can be transferred into the underlying substrate. The positions of these domains and their corresponding holes are directed to predetermined positions by the sidewalls and their associated protrusions. The distances separating these holes may be greater or less than what they would be if the block copolymer (and any additives) were to self-assemble in the absence of any sidewalls.

Abstract translation: 例如使用光刻法形成衬底中的开口，其中开口具有侧壁，其横截面由轮廓和凸形的部分给出。 例如，开口的横截面可以由重叠的圆形区域给出。 侧壁在各个点处相邻，在那里它们限定突起。 将包含嵌段共聚物的聚合物层施加在开口和基底上，并允许自组装。 在开口中形成离散的，分离的畴，其被去除以形成孔，其可以转移到下面的基底中。 这些区域及其对应的孔的位置通过侧壁及其相关联的突起被引导到预定位置。 分离这些孔的距离可以大于或小于如果嵌段共聚物（和任何添加剂）在没有任何侧壁的情况下自组装就会发生。

公开(公告)号：US20100285276A1

公开(公告)日：2010-11-11

申请号：US12662313

申请日：2010-04-09

Applicant: Sang Youl Kim ,  Myungeun Seo

Inventor： Sang Youl Kim ,  Myungeun Seo

IPC: B32B3/10 ,  B05D3/06

CPC classification number: C08F293/005 ,  B81B2203/0361 ,  B81C1/00031 ,  B81C2201/0149 ,  C08F2438/01 ,  C08F2438/03 ,  C08J5/18 ,  C08J7/12 ,  C08J2351/00

Abstract: Provided is the preparation of a coil-comb block copolymer and a method for producing nanostructures formed by the copolymer. Particularly, provided is a method for producing nanostructured polymer thin films, including: preparing a coil-comb block copolymer via a controlled polymer polymerization process; forming a thin film of the block copolymer on a substrate and carrying out heat treatment to form nanostructures including vertically aligned cylindrical microstructures; and irradiating ultraviolet rays to the thin film and carrying out oxygen plasma treatment to form nanostructured polymer thin films including cylindrical pores.

Abstract translation: 提供卷曲梳状嵌段共聚物的制备和由共聚物形成的纳米结构体的制造方法。 特别是提供一种生产纳米结构聚合物薄膜的方法，包括：通过受控的聚合物聚合方法制备卷曲梳状嵌段共聚物; 在基材上形成嵌段共聚物的薄膜并进行热处理以形成包括垂直排列的圆柱形微结构的纳米结构; 并向该薄膜照射紫外线并进行氧等离子体处理以形成包括圆柱形孔的纳米结构聚合物薄膜。

公开(公告)号：US20100124826A1

公开(公告)日：2010-05-20

申请号：US12272517

申请日：2008-11-17

Applicant: Dan Millward ,  Stephen J. Kramer ,  Gurtej S. Sandhu

Inventor： Dan Millward ,  Stephen J. Kramer ,  Gurtej S. Sandhu

IPC: H01L21/312 ,  B05D5/12

CPC classification number: H01L21/32139 ,  B81C1/00031 ,  B81C2201/0149 ,  H01L21/0337 ,  H01L21/0338 ,  H01L27/105 ,  H01L27/1052

Abstract: Some embodiments include methods of utilizing block copolymer to form patterns between weirs. The methods may utilize liners along surfaces of the weirs to compensate for partial-width segments of the patterns in regions adjacent the weirs. Some embodiments include methods in which spaced apart structures are formed over a substrate, and outer surfaces of the structures are coated with a thickness of coating. Diblock copolymer is used to form a pattern across spaces between the structures. The diblock copolymer includes a pair of block constituents that have different affinities for the coating relative to one another. The pattern includes alternating segments, with the segments adjacent to the coating being shorter than the segments that are not adjacent to the coating. The coating thickness is about the amount by which the segments adjacent to the coating are shorter than the segments that are not adjacent to the coating.

Abstract translation: 一些实施方案包括利用嵌段共聚物在堰之间形成图案的方法。 这些方法可以利用沿着堰的表面的衬垫来补偿邻近堰的区域中的图案的部分宽度段。 一些实施方案包括其中间隔开的结构形成在基底上的方法，并且结构的外表面涂覆有涂层厚度。 二嵌段共聚物用于在结构之间的空间上形成图案。 二嵌段共聚物包括一对相对于彼此具有不同亲和力的嵌段成分。 该图案包括交替的部分，与涂层相邻的部分比不与涂层相邻的部分短。 涂层厚度大约是与涂层相邻的部分比不与涂层相邻的部分短的量。

公开(公告)号：US07700498B2

公开(公告)日：2010-04-20

申请号：US11915090

申请日：2006-05-29

Applicant: Stephen Y. Chou ,  Qiangfei Xia

Inventor： Stephen Y. Chou ,  Qiangfei Xia

IPC: H01L21/477

CPC classification number: B81C1/00111 ,  B81C1/00634 ,  B81C2201/0149 ,  B82Y30/00 ,  H01L21/76892 ,  H01L21/76894 ,  Y10S977/888 ,  Y10S977/90

Abstract: In accordance with the invention, the structure (10A, 10B) of a patterned nanoscale or near nanoscale device (“nanostructure”) is repaired and/or enhanced by liquifying the patterned device in the presence of appropriate guiding conditions for a period of time and then permitting the device to solidify. Advantageous guiding conditions include adjacent spaced apart or contacting surfaces (12, 13A, 13B) to control surface structure and preserve verticality and unconstrained boundaries to permit smoothing of edge roughness. In an advantageous embodiment, a flat planar surface (12) is disposed overlying a patterned nanostructure surface (13A, 13B) and the surface (13A, 13B) is liquified by a high intensity light source to repair or enhance the nanoscale features.

Abstract translation: 根据本发明，图案化的纳米尺寸或近似纳米级器件（“纳米结构”）的结构（10A，10B）通过在适当的引导条件存在一段时间内液化图案化器件来修复和/或增强， 然后允许设备凝固。 有利的引导条件包括相邻的间隔开的或接触的表面（12,13A，13B），以控制表面结构并保持垂直度和无约束边界以允许边缘粗糙度的平滑化。 在有利的实施例中，平坦的平坦表面（12）设置在图案化的纳米结构表面（13A，13B）上方，并且表面（13A，13B）被高强度光源液化以修复或增强纳米尺度特征。