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    MEMS device
    81.
    发明授权
    MEMS device 有权
    MEMS器件

    公开(公告)号：US08497149B2

    公开(公告)日：2013-07-30

    申请号：US12280669

    申请日：2007-02-23

    Applicant: Richard Ian Laming ,  Anthony Traynor

    Inventor： Richard Ian Laming ,  Anthony Traynor

    IPC: H01L21/00

    CPC classification number: B81C1/00158 ,  B81B3/0027 ,  B81B2201/0257 ,  B81C1/00246 ,  B81C1/00904 ,  B81C2201/056 ,  G01L9/0073 ,  H04R3/005 ,  H04R19/005 ,  H04R19/04

    Abstract: A method of fabricating a micro-electrical-mechanical system (MEMS) apparatus on a substrate (10) comprises the steps of processing the substrate (10) so as to fabricate an electronic circuit (11); depositing a first electrode (15) that is operably coupled with the electronic circuit (11); depositing a membrane (16) so that it is mechanically coupled to the first electrode (15); applying a sacrificial layer (50); depositing a structural layer (18) and a second electrode (17) that is operably coupled with the electronic circuit (11) so that the sacrificial layer (50) is disposed between the membrane (16) and the structural layer (18) so as to form a preliminary structure; singulating the substrate (10); and removing the sacrificial layer (50) so as to form a MEMS structure, in which the step of singulating the substrate (10) is carried out before the step of removing the sacrificial layer (50).

    Abstract translation: 在基板（10）上制造微机电系统（MEMS）装置的方法包括以下步骤：处理基板（10）以制造电子电路（11）; 沉积与电子电路（11）可操作地耦合的第一电极（15）; 沉积膜（16），使得其机械耦合到第一电极（15）; 施加牺牲层（50）; 沉积与电子电路（11）可操作地耦合的结构层（18）和第二电极（17），使得牺牲层（50）设置在膜（16）和结构层（18）之间，以便 形成初步结构; 分离衬底（10）; 以及去除所述牺牲层以形成MEMS结构，其中在去除所述牺牲层（50）的步骤之前执行对所述衬底（10）进行单分割的步骤。

    METHOD FOR RELEASING THE SUSPENDED STRUCTURE OF A NEMS AND/OR NEMS COMPONENT
    83.
    发明申请
    METHOD FOR RELEASING THE SUSPENDED STRUCTURE OF A NEMS AND/OR NEMS COMPONENT 有权
    释放NEMS和/或NEMS组件悬挂结构的方法

    公开(公告)号：US20100317137A1

    公开(公告)日：2010-12-16

    申请号：US12793156

    申请日：2010-06-03

    Applicant: Cécilia DUPRE ,  Philippe Robert

    Inventor： Cécilia DUPRE ,  Philippe Robert

    IPC: H01L21/302

    CPC classification number: B81C1/00476 ,  B81B2203/0109 ,  B81C1/00246 ,  B81C2201/0109 ,  B81C2201/056 ,  B81C2203/0728 ,  H01L21/84 ,  H03H3/0073 ,  H03H9/2463 ,  H03H2009/02314

    Abstract: A method for making a microelectronic device comprising at least one electromechanical component provided with a mobile structure, the method comprising the steps of: forming in at least one fine semiconducting thin layer lying on a supporting layer, at least one bar bound to a block, said bar being intended to form a mobile structure of an electromechanical component, withdrawing a portion of the supporting layer under said bar, forming at least one passivation layer based on dielectric material around said bar, forming an encapsulation layer around the bar and covering said passivation layer, the method further comprising steps of: making metal contact and/or interconnection areas, and then suppressing the encapsulation layer around said bar.

    Abstract translation: 一种用于制造微电子器件的方法，所述微电子器件包括至少一个提供有移动结构的机电元件，所述方法包括以下步骤：在位于支撑层上的至少一个精细半导体薄层中形成至少一个与块结合的条， 所述杆旨在形成机电部件的移动结构，在所述杆下方撤回支撑层的一部分，基于围绕所述杆的电介质材料形成至少一个钝化层，围绕所述棒形成包封层并覆盖所述钝化 该方法还包括以下步骤：制造金属接触和/或互连区域，然后抑制围绕所述条的封装层。

    METHOD OF MANUFACTURING MULTI-LEVEL, SILICON, MICROMECHANICAL PARTS AND PARTS THEREBY OBTAINED
    84.
    发明申请
    METHOD OF MANUFACTURING MULTI-LEVEL, SILICON, MICROMECHANICAL PARTS AND PARTS THEREBY OBTAINED 有权
    制造多层次，硅，微量元件和获得的部件的方法

    公开(公告)号：US20100054092A1

    公开(公告)日：2010-03-04

    申请号：US12514352

    申请日：2007-11-01

    Applicant: Philippe Marmy ,  Jean-Luc Helfer ,  Thierry Conus

    Inventor： Philippe Marmy ,  Jean-Luc Helfer ,  Thierry Conus

    IPC: G04B29/00 ,  G04D3/00

    CPC classification number: B81C99/0095 ,  B81B2201/035 ,  B81C2201/019 ,  B81C2201/056 ,  B81C2203/038 ,  B81C2203/051 ,  G04B31/004 ,  G04D3/0069 ,  Y10T29/49579

    Abstract: The process comprises the following steps:a) a first element (3) or a plurality of said first elements (3) is/are machined in a first silicon wafer (1) keeping said elements (3) joined together via material bridges (5); b) step a) is repeated with a second silicon wafer (2) in order to machine a second element (4), differing in shape from that of the first element (3), or a plurality of said second elements (4); c) the first and second elements (3, 4) or the first and second wafers (1, 2) are applied, face to face, with the aid of positioning means (6, 7); d) the assembly formed in step c) undergoes oxidation; and e) the parts (10) are separated form the wafers (1, 2). Micromechanical timepiece parts obtained according to the process.

    Abstract translation: 该方法包括以下步骤：a）在第一硅晶片（1）中加工第一元件（3）或多个所述第一元件（3），以使所述元件（3）通过材料桥（5）连接在一起 ）; b）用第二硅晶片（2）重复步骤a），以便加工与第一元件（3）的形状不同的第二元件（4）或多个所述第二元件（4）; c）第一和第二元件（3,4）或第一和第二晶片（1,2）通过定位装置（6,7）面对面地施加; d）步骤c）中形成的组件经历氧化; 和e）部件（10）从晶片（1,2）分离。 根据工艺获得的微型钟表零件。

    Method for stripping sacrificial layer in MEMS assembly
    85.
    发明授权
    Method for stripping sacrificial layer in MEMS assembly 有权
    MEMS组装中剥离牺牲层的方法

    公开(公告)号：US07432572B2

    公开(公告)日：2008-10-07

    申请号：US11229968

    申请日：2005-09-19

    Applicant: Joshua Malone

    Inventor： Joshua Malone

    IPC: H01L29/84

    CPC classification number: B81C1/00833 ,  B81B2201/047 ,  B81C1/00317 ,  B81C2201/056 ,  B81C2201/117 ,  B81C2203/0145 ,  G02B26/0833

    Abstract: The present invention provides methods of manufacturing a MEMS assembly. In one embodiment, the method includes mounting a MEMS device, such as a MEMS mirror array, on an assembly substrate, where the MEMS device has a sacrificial layer over components formed therein. The method also includes coupling an assembly lid to the assembly substrate and over the MEMS device to create an interior of the MEMS assembly housing the MEMS device, whereby the coupling maintains an opening to the interior of the MEMS assembly. Furthermore, the method includes removing the sacrificial layer through the opening. A MEMS assembly constructed according to a process of the present invention is also disclosed.

    Abstract translation: 本发明提供了制造MEMS组件的方法。 在一个实施例中，该方法包括将MEMS器件（例如MEMS反射镜阵列）安装在组装衬底上，其中MEMS器件在其中形成的部件上具有牺牲层。 该方法还包括将组装盖耦合到组装衬底和MEMS器件上以形成容纳MEMS器件的MEMS组件的内部，由此耦合保持到MEMS组件的内部的开口。 此外，该方法包括通过开口去除牺牲层。 还公开了根据本发明的方法构造的MEMS组件。

    Method and system for xenon fluoride etching with enhanced efficiency
    86.
    发明申请
    Method and system for xenon fluoride etching with enhanced efficiency 审中-公开
    氙氟化物蚀刻方法和系统提高了效率

    公开(公告)号：US20060065622A1

    公开(公告)日：2006-03-30

    申请号：US11083030

    申请日：2005-03-17

    Applicant: Philip Floyd ,  William Cummings

    Inventor： Philip Floyd ,  William Cummings

    IPC: C23F1/00 ,  C03C25/68 ,  B44C1/22 ,  H01L21/306

    CPC classification number: H01L21/3065 ,  B81B2201/047 ,  B81C1/00531 ,  B81C2201/0142 ,  B81C2201/056 ,  G02B26/001 ,  H01L21/32135 ,  H01L21/67069

    Abstract: Provided herein is an apparatus and a method useful for manufacturing MEMS devices. An aspect of the disclosed apparatus provides a substrate comprising an etchable material exposed to a solid-state etchant, wherein the substrate and the solid-state etchant are disposed in an etching chamber. In some embodiments, the solid state etchant is moved into close proximity to the substrate. In other embodiments, a configurable partition is between the substrate and the solid-state etchant is opened. The solid-state etchant forms a gas-phase etchant suitable for etching the etchable material. In some preferred embodiments, the solid-state etchant is solid xenon difluoride. The apparatus and method are advantageously used in performing a release etch in the fabrication of optical modulators.

    Abstract translation: 本文提供了一种用于制造MEMS装置的装置和方法。 所公开的装置的一个方面提供了一种包括暴露于固态蚀刻剂的可蚀刻材料的衬底，其中衬底和固态蚀刻剂设置在蚀刻室中。 在一些实施例中，固态蚀刻剂移动到靠近基板的位置。 在其它实施例中，可配置的分隔件在基板之间并且打开固态蚀刻剂。 固态蚀刻剂形成适于蚀刻可蚀刻材料的气相蚀刻剂。 在一些优选的实施方案中，固态蚀刻剂是固体氙二氟化物。 该装置和方法有利地用于在光学调制器的制造中执行释放蚀刻。

    Method of undercutting micro-mechanical device with super-critical carbon dioxide
    90.
    发明申请
    Method of undercutting micro-mechanical device with super-critical carbon dioxide 有权
    用超临界二氧化碳切割微机械装置的方法

    公开(公告)号：US20030124462A1

    公开(公告)日：2003-07-03

    申请号：US10034647

    申请日：2001-12-28

    Applicant: Texas Instruments Incorporated

    Inventor： Seth Andrian Miller

    IPC: G03F007/00

    CPC classification number: B81C1/00476 ,  B81B3/0005 ,  B81C2201/056 ,  B81C2201/117 ,  G03F7/422

    Abstract: A method for removing sacrificial layers during the process of fabricating micro-mechanical devices with a solution of super-critical carbon dioxide. A mixture of super-critical carbon dioxide with other solvents, co-solvents and surfactants is used during the process to remove sacrificial layers. The disclosed method has many advantages over the prior art, including a reduction of capillary forces that can damage the free-standing micro-mechanical superstructures, an absence of plasma induced damage caused by ashing operations, and a reduction in the use of environmentally sensitive chemicals. Another advantage of the disclosed process is that the swelling of the photoresist layers is minimized. The disclosed method may be used to remove sacrificial layers that were deposited during the process of fabricating micro-mechanical devices. The method is also effective to remove a protective recoat layer that is deposited over a micro-mechanical device after it has been fabricated.

    Abstract translation: 在用超临界二氧化碳溶液制造微机械装置的过程中去除牺牲层的方法。 在该过程中，使用超临界二氧化碳与其它溶剂，共溶剂和表面活性剂的混合物来除去牺牲层。 所公开的方法与现有技术相比具有许多优点，包括可以减少可能损害自立微机械上层建筑的毛细管力的减少，灰化作用引起的等离子体引起的损伤的缺乏以及对环境敏感化学品的使用的减少 。 所公开的方法的另一个优点是光致抗蚀剂层的溶胀最小化。 所公开的方法可用于去除在制造微机械装置的过程中沉积的牺牲层。 该方法也有效地去除了在其被制造之后在微机械装置上沉积的保护性覆层。

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