公开(公告)号：US07800082B2

公开(公告)日：2010-09-21

申请号：US11276128

申请日：2006-02-15

Applicant: Peter L. Kellerman ,  Keneth H. Purser

Inventor： Peter L. Kellerman ,  Keneth H. Purser

IPC: H01J37/317

CPC classification number: H01J37/05 ,  H01J37/141 ,  H01J37/1472 ,  H01J37/3171 ,  H01J2237/0042 ,  H01J2237/057 ,  H01J2237/141 ,  H01J2237/142 ,  H01J2237/1508 ,  H01J2237/152 ,  H01J2237/31701 ,  H01J2237/31705

Abstract: An electromagnet and related ion implanter system including active field containment are disclosed. The electromagnet provides a dipole magnetic field within a tall, large gap with minimum distortion and degradation of strength. In one embodiment, an electromagnet for modifying an ion beam includes: a ferromagnetic box structure including six sides; an opening in each of a first side and a second opposing side of the ferromagnetic box structure for passage of the ion beam therethrough; and a plurality of current-carrying wires having a path along an inner surface of the ferromagnetic box structure, the inner surface including the first side and the second opposing side and a third side and a fourth opposing side, wherein the plurality of current-carrying wires are positioned to pass around each of the openings of the first and second opposing sides.

Abstract translation: 公开了一种包括活性场容纳的电磁体和相关离子注入机系统。 电磁铁在高大的间隙内提供偶极磁场，具有最小的变形和强度的降低。 在一个实施例中，用于修改离子束的电磁体包括：包括六个边的铁磁盒结构; 所述铁磁盒结构的第一侧和第二相对侧中的每一个中的开口用于使所述离子束通过其中; 以及多个载流线，其具有沿铁磁箱结构的内表面的路径，内表面包括第一侧和第二相对侧，以及第三侧和第四相对侧，其中多个载流 电线定位成绕过第一和第二相对侧的每个开口。

公开(公告)号：US20100003423A1

公开(公告)日：2010-01-07

申请号：US12541002

申请日：2009-08-13

Applicant: Hitoshi Nakagawara

Inventor： Hitoshi Nakagawara

IPC: C23C16/50 ,  C23C16/00 ,  H05H1/10 ,  H05H1/24

CPC classification number: H01J37/08 ,  C23C14/081 ,  C23C14/28 ,  H01J37/04 ,  H01J37/1472 ,  H01J37/3053 ,  H01J37/3178 ,  H01J2237/061 ,  H01J2237/083 ,  H01J2237/103 ,  H01J2237/152 ,  H01J2237/3132 ,  H01J2237/3146

Abstract: The cross section of a beam is flattened by causing a plasma beam (25) extracted by a convergence coil from a plasma gun to pass through the magnetic field that extends to the direction orthogonal to the direction in which the plasma beam travels and is formed by magnets (27) made of permanent magnets which are oppositely arranged in pairs in parallel with each other. A plasma apparatus is provided using a plasma beam with 0.7≦Wi/Wt with a half-value of beam intensity with respect to a width Wt of a flattened beam 28 as Wi. At least one magnet is included which is stronger in intensity of a repulsive magnetic field at the center of the beam.

Abstract translation: 通过使来自等离子体枪的会聚线圈提取的等离子体束（25）通过延伸到与等离子体束行进的方向正交的方向的磁场而使束的横截面平坦化，并且由 由永久磁铁制成的磁体（27）彼此成对平行配置。 使用具有0.7 <= Wi / Wt的等离子体束提供等离子体装置，其中光束强度的一半值相对于扁平光束28的宽度Wt为Wi。 包括至少一个磁体，其在梁的中心处的排斥磁场的强度更强。

公开(公告)号：US20080078954A1

公开(公告)日：2008-04-03

申请号：US11540064

申请日：2006-09-29

Applicant: Bo H. Vanderberg ,  Patrick Splinter

Inventor： Bo H. Vanderberg ,  Patrick Splinter

IPC: H01J37/317

CPC classification number: H01J37/1471 ,  H01J37/04 ,  H01J37/304 ,  H01J37/3171 ,  H01J2237/0475 ,  H01J2237/055 ,  H01J2237/1501 ,  H01J2237/152 ,  H01J2237/24507 ,  H01J2237/24528 ,  H01J2237/3045 ,  H01J2237/31703

Abstract: A parallelizing component of an ion implantation system comprises two angled dipole magnets that mirror one another and serve to bend an ion beam traversing therethrough to have a substantially “s” shape. This s bend serves to filter out contaminants of the beam, while the dipoles also parallelize the beam to facilitate uniform implant properties across the wafer, such as implant angle, for example. Additionally, a deceleration stage is included toward the end of the implantation system so that the energy of the beam can be kept relatively high throughout the beamline to mitigate beam blowup.

Abstract translation: 离子注入系统的平行化部件包括两个成角度的偶极子磁体，其彼此相互反射并用于弯曲横穿其中的离子束以具有基本上“s”的形状。 该弯曲用于滤除光束的污染物，而偶极子也使光束平行化，以促进跨晶片的均匀植入性能，例如植入角度。 此外，朝向植入系统的端部包括减速阶段，使得束的能量可以在整个束线中保持相对较高以减轻束的膨胀。

公开(公告)号：US20080067398A1

公开(公告)日：2008-03-20

申请号：US11808342

申请日：2007-06-08

Applicant: Shojiro Dohi

Inventor： Shojiro Dohi

IPC: H01J1/50

CPC classification number: H01J49/30 ,  H01J37/1475 ,  H01J2237/055 ,  H01J2237/057 ,  H01J2237/152 ,  H01J2237/153 ,  H01J2237/31701

Abstract: In an analyzing electromagnet 40, each of magnetic poles 80 in which the plan-view shape is curved is divided along the traveling direction of an ion beam 2 into three partial magnetic poles 81 to 83. The gaps of the first and third partial magnetic pole pairs 81, 83 as counted from the inlet for the ion beam 2 are widened toward the outside of the curvature, and the gap of the second partial magnetic pole pair 82 is widened toward the inside of the curvature.

Abstract translation: 在分析用电磁铁40中，将平面形状为曲面的磁极80沿着离子束2的行进方向分割成三个部分磁极81〜83。 从离子束2的入口开始计数的第一和第三部分磁极对81,83的间隙朝向曲率的外侧变宽，并且第二部分磁极对82的间隙朝向 曲率。

公开(公告)号：US20070170369A1

公开(公告)日：2007-07-26

申请号：US11537011

申请日：2006-09-29

Applicant: Kenneth H. Purser ,  Atul Gupta

Inventor： Kenneth H. Purser ,  Atul Gupta

IPC: H01J37/153

CPC classification number: H01J37/147 ,  H01J37/3007 ,  H01J2237/1501 ,  H01J2237/152 ,  H01J2237/30477 ,  H01J2237/31701

Abstract: A technique for improving uniformity of a ribbon beam is disclosed. In one particular exemplary embodiment, an apparatus may comprise a first corrector-bar assembly and a second corrector-bar assembly, wherein the second corrector-bar assembly is located at a predetermined distance from the first corrector-bar assembly. Each of a first plurality of coils in the first corrector-bar assembly may be individually excited to deflect at least one beamlet in the ribbon beam, thereby causing the beamlets to arrive at the second corrector-bar assembly in a desired spatial spread. Each of a second plurality of coils in the second corrector-bar assembly may be individually excited to further deflect one or more beamlets in the ribbon beam, thereby causing the beamlets to exit the second corrector-bar assembly at desired angles.

Abstract translation: 公开了一种用于提高带状束的均匀性的技术。 在一个特定示例性实施例中，装置可以包括第一校正杆组件和第二校正杆组件，其中第二校正杆组件位于距离第一校正杆组件预定距离处。 第一校正棒组件中的第一组多个线圈中的每一个可以被单独地激发以偏转带束束中的至少一个子束，从而使子束以期望的空间扩展到达第二校正器组件。 可以单独地激励第二校正棒组件中的第二组多个线圈中的每一个以进一步偏转带状束中的一个或多个子束，从而使子束以期望的角度离开第二校正棒组件。

公开(公告)号：US07105839B2

公开(公告)日：2006-09-12

申请号：US10807772

申请日：2004-03-24

Applicant: Nicholas R. White

Inventor： Nicholas R. White

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/1472 ,  H01J37/1474 ,  H01J37/3045 ,  H01J2237/1501 ,  H01J2237/1504 ,  H01J2237/1508 ,  H01J2237/152

Abstract: In system for implanting workpieces with an accurately parallel scanned ion beam, a fine-control collimator construct is used to reduce the deviation of the scanned ion beam from a specified axis of parallelism and thereby improve its collimation. The shape of the fine-control collimator matches the ribbon shape of the beam and correction of parallelism in two orthogonal directions is possible. Measurement of the non-parallelism is accomplished by sampling the scanned beam in two planes and comparing timing information; and such measurement is calibrated to the orientation of the workpiece in the plane where ion implantation occurs. Measurement of non-uniformity in the doping profile is accomplished using the same means; and the scan waveform is adjusted to substantially remove any non-uniformity in the doping profile.

Abstract translation: 在用于用精确平行的扫描离子束注入工件的系统中，使用精细控制准直器构造来减少扫描的离子束与特定的平行轴的偏离，从而改善其准直。 精细准直器的形状与光束的色带形状匹配，并且可以在两个正交方向上校正平行度。 通过在两个平面中采样扫描光束并比较定时信息来实现非平行度的测量; 并且这样的测量被校准为在离子注入发生的平面中的工件的取向。 使用相同的方法测量掺杂分布中的不均匀性; 并且调整扫描波形以基本上消除掺杂分布中的任何不均匀性。

公开(公告)号：US20060017010A1

公开(公告)日：2006-01-26

申请号：US10896821

申请日：2004-07-22

Applicant: Bo Vanderberg ,  Kevin Wenzel ,  Robert Rathmell ,  Joseph Ferrara ,  David Sabo

Inventor： Bo Vanderberg ,  Kevin Wenzel ,  Robert Rathmell ,  Joseph Ferrara ,  David Sabo

IPC: G21G5/00

CPC classification number: H01J37/1475 ,  G21K1/093 ,  H01F7/202 ,  H01F41/0226 ,  H01J37/3171 ,  H01J2237/152

Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. A scanning magnet is most preferably used to control a side to side scanning of the ion beam so that an entire implantation surface of the workpiece can be processed.

Abstract translation: 离子束注入机包括用于产生沿束线移动的离子束的离子束源和真空或注入室，其中诸如硅晶片的工件被定位成与离子束相交以离子注入工件表面 通过离子束。 扫描磁体最优选地用于控制离子束的侧面扫描，使得可以处理工件的整个植入表面。

公开(公告)号：US20030183773A1

公开(公告)日：2003-10-02

申请号：US10422279

申请日：2003-04-23

Applicant: ADVANTEST CORPORATION

Inventor： Takeshi Haraguchi

IPC: G21G005/00

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/1471 ,  H01J37/3177 ,  H01J2237/152 ,  H01J2237/31776

Abstract: An electron beam exposure system for exposing a pattern on a wafer using a plurality of electron beams, comprising a section for generating a plurality of electron beams, an electron lens section having a plurality of apertures for passing a plurality of electron beams and focusing the plurality of electron beams independently, and a magnetic field formation section provided at least one of the plurality of apertures and forming a magnetic field in a direction substantially perpendicular to the irradiating direction of an electron beam passing through the aperture.

Abstract translation: 一种电子束曝光系统，用于使用多个电子束曝光晶片上的图案，所述多个电子束包括用于产生多个电子束的部分，具有多个孔的电子透镜部分，用于使多个电子束通过并聚焦多个 独立地形成电子束，并且磁场形成部分设置有多个孔中的至少一个，并且在与穿过该孔的电子束的照射方向基本垂直的方向上形成磁场。

公开(公告)号：US06617586B2

公开(公告)日：2003-09-09

申请号：US10050146

申请日：2002-01-18

Applicant: David Woodburn ,  Walter Crewson

Inventor： David Woodburn ,  Walter Crewson

IPC: H01J3730

CPC classification number: G21K5/04 ,  H01J2237/152

Abstract: A beam delivery system uses a set of electronically controlled magnets with a common magnetic yoke to steer the beam directly onto the products being irradiated with a very short distance between the magnets and the products.

Abstract translation: 光束传送系统使用一组具有公共磁轭的电子控制磁体，以将光束直接引导到被磁体和产品之间非常短距离照射的产品上。

公开(公告)号：US06461680B2

公开(公告)日：2002-10-08

申请号：US09471613

申请日：1999-12-23

Applicant: David J. Pinckney

Inventor： David J. Pinckney

IPC: B05D302

CPC classification number: C23C26/00 ,  C23C18/1605 ,  H01J9/236 ,  H01J2237/152 ,  H05K1/0306 ,  H05K3/108 ,  H05K3/426 ,  Y10T29/49117

Abstract: The present invention relates to a method and apparatus of fabricating electromagnetic coil vanes. The method involves photolithographically exposing high resolution, dense wire patterns in a flash coat of copper, on both sides of a ceramic vane substrate. The substrate can be pre-drilled with a through hole to connect the two copper coil patterns. Additional copper is then deposited on both high resolution patterns and in the through hole by plating until the desired thickness is obtained. A firing operation is then performed that eutectically bonds the copper to the ceramic.

Abstract translation: 本发明涉及制造电磁线圈叶片的方法和装置。 该方法包括在陶瓷叶片基板的两侧光刻地暴露在铜的闪光涂层中的高分辨率，致密的线图案。 基板可以预先钻出一个通孔，以连接两个铜线圈图案。 然后将另外的铜沉积在两个高分辨率图案上，并在通孔中通过电镀沉积，直到获得所需的厚度。 然后进行烧结操作，其将铜共晶地结合到陶瓷上。