公开(公告)号：US09928992B2

公开(公告)日：2018-03-27

申请号：US15169768

申请日：2016-06-01

Applicant: Panasonic Intellectual Property Management Co., Ltd.

Inventor： Yoshihiro Sakaguchi ,  Shin-Ichi Imai

IPC: H01J37/32 ,  A61L2/14 ,  H05H1/48 ,  H05H1/46 ,  C02F1/46

CPC classification number: H01J37/32064 ,  A61L2/14 ,  C02F1/4608 ,  C02F2303/04 ,  H01J37/32036 ,  H01J37/32045 ,  H01J37/32816 ,  H01J37/32825 ,  H05H1/48 ,  H05H2001/4682

Abstract: A plasma generation device includes: a pair of electrodes that cause plasma to be generated in atmospheric pressure by a voltage being applied between the pair of electrodes; and a power source that includes a step-up transformer that has a coupling coefficient of 0.9 or greater and 0.9999 or less and generates the voltage.

公开(公告)号：US09460897B2

公开(公告)日：2016-10-04

申请号：US14664510

申请日：2015-03-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki Katsunuma

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32477 ,  H01J37/32045 ,  H01L21/02115

Abstract: Provided is a plasma etching method of etching OCOC film in which HTO films and carbon films are alternately laminated by plasma of mixed gas containing first CF-based gas or second CF-based gas and oxygen gas using a silicon film formed on OCOC film as a mask. The etching of OCOC film includes a first etching process of etching a region spanning from the top surface to the middle of OCOC film by plasma of mixed gas containing first CF-based gas having a predetermined ratio of content of carbon to content of fluorine and oxygen gas and a second etching process of etching a region spanning from the middle of OCOC film to the lowest layer by plasma of mixed gas containing second CF-based gas having a ratio of content of carbon to content of fluorine, which is higher than the predetermined ratio of first CF-based gas, and oxygen gas.

Abstract translation: 提供了一种蚀刻OCOC膜的等离子体蚀刻方法，其中通过使用在OCOC膜上形成的硅膜将含有第一CF基气体或第二CF基气体和氧气的混合气体的等离子体交替层叠HTO膜和碳膜作为 面具。 OCOC膜的蚀刻包括蚀刻从OCOC膜的顶表面到中间的区域的第一蚀刻工艺，该等离子体含有具有预定碳含量的碳与氟和氧的含量的第一CF基气体的混合气体 气体和第二蚀刻工艺，其通过含有比碳含量与氟含量的比例高于预定的第二CF基气体的混合气体的等离子体蚀刻从OCOC膜的中间到最低层的区域 第一CF基气体和氧气的比例。

公开(公告)号：US09214801B2

公开(公告)日：2015-12-15

申请号：US14284894

申请日：2014-05-22

Applicant: Albert Bulliard ,  Benoit Fragniere ,  Joel Oehen

Inventor： Albert Bulliard ,  Benoit Fragniere ,  Joel Oehen

IPC: H02H3/38 ,  H01J37/32 ,  H01J37/34 ,  H02H1/06

CPC classification number: H02H3/38 ,  H01J37/32045 ,  H01J37/3444 ,  H02H1/06

Abstract: A power supply device for plasma processing, wherein electric arcs may occur, comprises a power supply circuit for generating a voltage across output terminals, and a first switch connected between the power supply circuit and one of the output terminals. According to a first aspect the power supply device comprises a recovery energy circuit connected to the output terminals and to the power supply circuit. According to a second aspect the power supply device comprises an inductance circuit including an inductor and a second switch connected parallel to the inductor. According to a third aspect the power supply device comprises a controller for causing the power supply circuit and the first switch to be switched on and off. The controller is configured to determine a quenching time interval by means of a self-adaptive process. The quenching time interval defines the time interval during which, in an event of an arc, no voltage is generated across the output terminals.

Abstract translation: 一种用于等离子体处理的电源装置，其中可能发生电弧，包括用于在输出端子之间产生电压的电源电路和连接在电源电路和其中一个输出端子之间的第一开关。 根据第一方面，电源装置包括连接到输出端子和电源电路的恢复能量电路。 根据第二方面，电源装置包括电感电路，其包括电感器和与电感器并联连接的第二开关。 根据第三方面，电源装置包括用于使电源电路和第一开关被接通和断开的控制器。 控制器被配置为通过自适应过程来确定淬灭时间间隔。 淬火时间间隔定义了在电弧的情况下在输出端子之间不产生电压的时间间隔。

公开(公告)号：US20150294841A1

公开(公告)日：2015-10-15

申请号：US14664510

申请日：2015-03-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki KATSUNUMA

IPC: H01J37/32

CPC classification number: H01J37/32477 ,  H01J37/32045 ,  H01L21/02115

Abstract: Provided is a plasma etching method of etching OCOC film in which HTO films and carbon films are alternately laminated by plasma of mixed gas containing first CF-based gas or second CF-based gas and oxygen gas using a silicon film formed on OCOC film as a mask. The etching of OCOC film includes a first etching process of etching a region spanning from the top surface to the middle of OCOC film by plasma of mixed gas containing first CF-based gas having a predetermined ratio of content of carbon to content of fluorine and oxygen gas and a second etching process of etching a region spanning from the middle of OCOC film to the lowest layer by plasma of mixed gas containing second CF-based gas having a ratio of content of carbon to content of fluorine, which is higher than the predetermined ratio of first CF-based gas, and oxygen gas.

Abstract translation: 提供了一种蚀刻OCOC膜的等离子体蚀刻方法，其中通过使用在OCOC膜上形成的硅膜将含有第一CF基气体或第二CF基气体和氧气的混合气体的等离子体交替层叠HTO膜和碳膜作为 面具。 OCOC膜的蚀刻包括蚀刻从OCOC膜的顶表面到中间的区域的第一蚀刻工艺，该等离子体含有具有预定碳含量的碳与氟和氧的含量的第一CF基气体的混合气体 气体和第二蚀刻工艺，其通过含有比碳含量与氟含量的比例高于预定的第二CF基气体的混合气体的等离子体蚀刻从OCOC膜的中间到最低层的区域 第一CF基气体和氧气的比例。

公开(公告)号：US20150231575A1

公开(公告)日：2015-08-20

申请号：US14422709

申请日：2013-07-25

Applicant: Fujifilm Manufacturing Europe BV

Inventor： Serguei Starostine ,  Hindrik De Vries

IPC: B01D69/10 ,  C08F10/02 ,  H01J37/32

CPC classification number: B01D69/105 ,  B01D67/009 ,  B01D2323/42 ,  B01D2323/46 ,  C08F10/02 ,  H01J37/32036 ,  H01J37/32045 ,  H01J37/32348 ,  H01J37/32825 ,  Y10T428/249981

Abstract: Method of treating a substrate (11), comprising: •providing a treatment space (5) between at least two opposing electrodes (2,3), filling the treatment space with a gas composition, •placing the substrate, which is a porous substrate, in the treatment space, generating an atmospheric pressure glow discharge plasma between the at least two opposing electrodes, and •subjecting the porous substrate to the atmospheric pressure glow discharge plasma, thereby creating micro-pores uniformly throughout the porous substrate, •wherein the atmospheric pressure glow discharge plasma in the treatment space has a specific energy of 10 J/cm or higher, and wherein the treatment space comprises oxygen in the range of 0.1 to 21% vol. %. The resultant substrates are useful for ion exchange.

Abstract translation: 一种处理衬底（11）的方法，包括：在至少两个相对的电极（2,3）之间提供处理空间（5），用气体组合物填充处理空间;以及放置作为多孔衬底的衬底 在所述处理空间中，在所述至少两个相对电极之间产生大气压辉光放电等离子体，以及•使所述多孔基板经受大气压辉光放电等离子体，由此在所述多孔基板上均匀地形成微孔，其中所述大气 处理空间中的高压辉光放电等离子体的比能为10J / cm以上，其中处理空间包含0.1〜21体积％的氧。 ％。 所得底物可用于离子交换。

公开(公告)号：US08884180B2

公开(公告)日：2014-11-11

申请号：US13785888

申请日：2013-03-05

Applicant: Advanced Energy Industries, Inc.

Inventor： Milan Ilic

IPC: B23K9/06 ,  B23K10/00 ,  H01J37/32 ,  H05H1/46

CPC classification number: B23K10/006 ,  H01J37/32045 ,  H05H1/46

Abstract: A system and method for managing power delivered to a processing chamber is described. In one embodiment current is drawn away from the plasma processing chamber while initiating an application of power to the plasma processing chamber during an initial period of time, the amount of current being drawn away decreasing during the initial period of time so as to increase the amount of power applied to the plasma processing chamber during the initial period of time.

Abstract translation: 描述了用于管理传送到处理室的功率的系统和方法。 在一个实施例中，电流从等离子体处理室被拉出，同时在初始时间段期间开始向等离子体处理室施加电力，在初始时间段内电流的量被减少，从而增加量 在初始时间期间施加到等离子体处理室的功率。

公开(公告)号：US08854781B2

公开(公告)日：2014-10-07

申请号：US13846430

申请日：2013-03-18

Applicant: Albert Bulliard ,  Benoit Fragniere ,  Joel Oehen

Inventor： Albert Bulliard ,  Benoit Fragniere ,  Joel Oehen

IPC: H02H3/00 ,  H02H7/00 ,  H01J37/34 ,  H02H1/06 ,  H02H3/38 ,  H01J37/32

CPC classification number: H02H3/38 ,  H01J37/32045 ,  H01J37/3444 ,  H02H1/06

Abstract: A power supply device for plasma processing, wherein electric arcs may occur, comprises a power supply circuit for generating a voltage across output terminals, and a first switch connected between the power supply circuit and one of the output terminals. According to a first aspect the power supply device comprises a recovery energy circuit connected to the output terminals and to the power supply circuit. According to a second aspect the power supply device comprises an inductance circuit including an inductor and a second switch connected parallel to the inductor. According to a third aspect the power supply device comprises a controller for causing the power supply circuit and the first switch to be switched on and off. The controller is configured to determine a quenching time interval by means of a self-adaptive process. The quenching time interval defines the time interval during which, in an event of an arc, no voltage is generated across the output terminals.

公开(公告)号：US08643279B2

公开(公告)日：2014-02-04

申请号：US12692246

申请日：2010-01-22

Applicant: Thomas Kirchmeier ,  Gerd Hintz

Inventor： Thomas Kirchmeier ,  Gerd Hintz

IPC: H05B37/00

CPC classification number: G01R21/06 ,  G01R23/02 ,  H01J37/32045 ,  H02M7/003 ,  H02M7/5383 ,  H03H7/40 ,  H05B41/2806 ,  H05H1/46 ,  Y02B20/22

Abstract: Determining a high frequency operating parameter in a plasma system including a plasma power supply device coupled to a plasma load using a hybrid coupler having four ports is accomplished by: generating two high frequency source signals of identical frequency, the signals phase shifted by 90° with respect to one another; generating a high frequency output signal by combining the high frequency source signals in the hybrid coupler; transmitting the high frequency output signal to the plasma load; detecting two or more signals, each signal corresponding to a respective port of the hybrid coupler and related to an amplitude of a high frequency signal present at the respective port; and based on an evaluation of the two or more signals, determining the high frequency operating parameter.

Abstract translation: 使用具有四个端口的混合耦合器来确定等离子体系统中包括耦合到等离子体负载的等离子体电源装置的高频工作参数是通过以下方式实现的：产生两个相同频率的高频源信号，相位偏移90°， 相互尊重 通过组合混合耦合器中的高频源信号来产生高频输出信号; 将高频输出信号传输到等离子体负载; 检测两个或更多个信号，每个信号对应于混合耦合器的相应端口并且与存在于相应端口的高频信号的振幅有关; 并且基于对两个或更多个信号的评估，确定高频操作参数。

公开(公告)号：US20130214680A1

公开(公告)日：2013-08-22

申请号：US13848319

申请日：2013-03-21

Applicant: HUETTINGER Elektronik GmbH + Co. KG

Inventor： Thomas Kirchmeier ,  Michael Glueck

IPC: H05H1/46

CPC classification number: G01R21/06 ,  G01R23/02 ,  H01J37/32045 ,  H02M7/003 ,  H02M7/5383 ,  H03H7/40 ,  H05B41/2806 ,  H05H1/46 ,  Y02B20/22

Abstract: A plasma supply device generates an output power greater than 500 W at an essentially constant basic frequency greater than 3 MHz and powers a plasma process to which is supplied the generated output power, and from which reflected power is returned to the plasma supply device. The plasma supply device includes at least one inverter connected to a DC power supply, which inverter has at least one switching element, and an output network, wherein the at least one output network includes at least one inductance that has at least one magnetic field strengthening element that is a Perminvar ferrite.

Abstract translation: 等离子体供给装置以大于3MHz的基本上恒定的基本频率产生大于500W的输出功率，并对供给所产生的输出功率的等离子体处理进行供电，并从反射功率返回到等离子体供应装置。 等离子体供给装置包括至少一个连接到DC电源的逆变器，该逆变器具有至少一个开关元件和输出网络，其中至少一个输出网络包括至少一个具有至少一个磁场强化的电感 元素是Perminvar铁氧体。

公开(公告)号：US08395078B2

公开(公告)日：2013-03-12

申请号：US12631735

申请日：2009-12-04

Applicant: Milan Ilic

Inventor： Milan Ilic

IPC: B23K9/06

CPC classification number: B23K10/006 ,  H01J37/32045 ,  H05H1/46

Abstract: A system and method for managing power delivered to a processing chamber is described. In one embodiment current is drawn away from the plasma processing chamber while initiating an application of power to the plasma processing chamber during an initial period of time, the amount of current being drawn away decreasing during the initial period of time so as to increase the amount of power applied to the plasma processing chamber during the initial period of time.

Abstract translation: 描述了用于管理传送到处理室的功率的系统和方法。 在一个实施例中，电流从等离子体处理室被拉出，同时在初始时间段期间开始向等离子体处理室施加电力，在初始时间段内电流的量被减少，从而增加量 在初始时间期间施加到等离子体处理室的功率。