Abstract:
A flip-chip semiconductor package includes a circuit board having a core layer and at least one buildup layer, a semiconductor device connected to the circuit board through a metal bump, and a cured member that is made of a sealing resin composition and enclosed between the semiconductor device and the circuit board. The coefficient of linear expansion at 25 to 75° C. of the cured member is 15 to 35 ppm/° C., the glass transition temperature of at least one buildup layer is 170° C. or more, and the coefficient of linear expansion of at 25 to 75° C. of the at least one buildup layer in the planar direction is 25 ppm or less. A highly reliable flip-chip semiconductor package, buildup layer material, core layer material, and sealing resin composition can be provided by preventing cracks and inhibiting delamination.
Abstract:
A wiring board assembly includes: a plurality of insulating substrates of which each includes an insulating layer and a wiring layer; a wiring board that includes pads formed on the insulating substrate; and a semiconductor component that is joined on the pads by using solder bumps. The wiring board embeds a stiffening member whose thickness is thinner than that of the insulating layer and whose thermal expansion coefficient is smaller and Young's modulus is higher than those of the wiring layer and the insulating layer.
Abstract:
Provided is a multilayer polyimide flexible metal-clad laminate where multiple layers of polyimide are structured on one surface or two surfaces of a metal foil, the multilayer polyimide flexible metal-clad laminate including: multiple layers of polyimide having different coefficients of linear thermal expansion; and gradient layers each formed between polyimide layers of the multiple layers of polyimide, the gradient layer having a gradual change in coefficient of linear thermal expansion between the polyimide layers, and a manufacturing method thereof, so that there can be provided a flexible metal-clad laminate for a printed circuit board capable of solving a delamination problem between the polyimide layers and having excellent dimensional stability.
Abstract:
Disclosed herein is an insulating resin composition for a printed circuit board, including 40 to 70 wt % of a liquid crystal oligomer shown in formula 1, 10 to 30 wt % of an epoxy resin, 10 to 30 wt % of a cyanate-based resin, and 0.1 to 0.5 wt % of a curing catalyst, and a printed circuit board including the same.According to an exemplary embodiment of the present invention, the printed circuit board has electric, thermal, and mechanical stabilities even though the printed circuit board is reduced in weight, thickness, and size. Further, a stable driving property is ensured, dielectricity is low, and attachment strength, chemical resistance, and warpage property are excellent during a board process in the related art.
Abstract:
A wiring substrate includes: a plate-like base material containing carbon fibers; a wiring layer formed on a surface of the base material; a first via including a first through hole penetrating through the base material, a first resin layer formed on an inner wall of the first through hole and including a second through hole, and a first conductive layer formed on an inner wall of the second through hole; and a second via including a third through hole penetrating through the base material and a second conductive layer formed on an inner wall of the third through hole, wherein an inside diameter of the third through hole is greater than an inside diameter of the second through hole.
Abstract:
A printed wiring board includes a core insulation layer including a resin and having a via conductor through the core insulation layer, a first conductive layer formed on the core layer and including a copper foil and a plated film, an interlayer insulation layer formed on the first layer and including a resin, the interlayer layer having a via conductor through the interlayer layer, and a second conductive layer formed on the interlayer layer and including a copper foil and a plated film. The first layer includes a conductive circuit, the core and interlayer layers have dielectric constants of 4.0 or lower for signal transmission at frequency of 1 GHz and thermal expansion coefficient of 85 ppm/° C. or lower at or below Tg, and the foil of the first layer has thickness greater than thickness of the foil of the second layer.
Abstract:
A probe card assembly includes a probe card, a space transformer having resilient contact structures (probe elements) mounted directly to (i.e., without the need for additional connecting wires or the like) and extending from terminals on a surface thereof, and an interposer disposed between the space transformer and the probe card. The space transformer and interposer are “stacked up” so that the orientation of the space transformer, hence the orientation of the tips of the probe elements, can be adjusted without changing the orientation of the probe card. Suitable mechanisms for adjusting the orientation of the space transformer, and for determining what adjustments to make, are disclosed. The interposer has resilient contact structures extending from both the top and bottom surfaces thereof, and ensures that electrical connections are maintained between the space transformer and the probe card throughout the space transformer's range of adjustment, by virtue of the interposer's inherent compliance. Multiple die sites on a semiconductor wafer are readily probed using the disclosed techniques, and the probe elements can be arranged to optimize probing of an entire wafer. Composite interconnection elements having a relatively soft core overcoated by a relatively hard shell, as the resilient contact structures are described.
Abstract:
A circuit board (1) exhibits an average coefficient of thermal expansion (A) of the first insulating layer (21) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point of equal to or higher than 3 ppm/degrees C. and equal to or lower than 30 ppm/degrees C. Further, an average coefficient of thermal expansion (B) of the second insulating layer (23) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point is equivalent to an average coefficient of thermal expansion (C) of the third insulating layer (25) in the direction along the substrate surface in a temperature range from 25 degrees C. to its glass transition point. (B) and (C) are larger than (A), and a difference between (A) and (B) and a difference between (A) and (C) are equal to or higher than 5 ppm/degrees C. and equal to or lower than 35 ppm/degrees C.
Abstract:
A semiconductor device includes a multilayer wiring board and a semiconductor chip mounted on the multilayer wiring board. Electrode pads of the semiconductor chip include: first electrode pads including electrode pads respectively disposed in the vicinity of corners of the back surface of the semiconductor chip; and second electrode pads other than the first electrode pads. Connection pads of the multilayer wiring board include: first connection pads connected to the first electrode pads via bumps; and second connection pads connected to the second electrode pads via bumps. The first connection pads are supported by a first insulating region made of a thermoplastic resin, and the second connection pads are supported by a second insulating region made of a thermosetting resin.
Abstract:
The present invention relates to a flexible metal-clad laminate for a printed circuit board and a method of manufacturing the same. The flexible metal-clad laminate includes: a first polyimide layer that is disposed on one surface of the metal-clad and has thermal expansion coefficient of 20 ppm/K or less; and a second polyimide layer that is disposed on one surface of the first polyimide layer and has thermal expansion coefficient of 20 ppm/K or more, wherein a difference between the thermal expansion coefficients of the first and second polyimide layers is within 5 ppm/K and a glass transition temperature Tg of resin of the first polyimide layer is 300° C.