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    Semiconductor device structures including nickel plated aluminum, copper, and tungsten structures
    2.
    发明授权
    Semiconductor device structures including nickel plated aluminum, copper, and tungsten structures 有权
    包括镀镍铝，铜和钨结构的半导体器件结构

    公开(公告)号：US07855454B2

    公开(公告)日：2010-12-21

    申请号：US11702286

    申请日：2007-02-05

    Applicant: Salman Akram ,  James M. Wark ,  William M. Hiatt

    Inventor： Salman Akram ,  James M. Wark ,  William M. Hiatt

    IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC classification number: H01L21/76879 ,  C23C18/1607 ,  C23C18/1637 ,  C23C18/1831 ,  C23C18/1834 ,  C23C18/34 ,  C23C18/36 ,  H01L21/288 ,  H01L21/76898 ,  H01L2924/00013 ,  Y10T428/12528 ,  Y10T428/24917 ,  H01L2224/29099

    Abstract: A method of activating a metal structure on an intermediate semiconductor device structure toward metal plating. The method comprises providing an intermediate semiconductor device structure comprising at least one first metal structure and at least one second metal structure on a semiconductor substrate. The at least one first metal structure comprises at least one aluminum structure, at least one copper structure, or at least one structure comprising a mixture of aluminum and copper and the at least one second metal structure comprises at least one tungsten structure. One of the at least one first metal structure and the at least one second metal structure is activated toward metal plating without activating the other of the at least one first metal structure and the at least one second metal structure. An intermediate semiconductor device structure is also disclosed.

    Abstract translation: 一种激活中间半导体器件结构上的金属结构朝向金属电镀的方法。 该方法包括提供在半导体衬底上包括至少一个第一金属结构和至少一个第二金属结构的中间半导体器件结构。 所述至少一个第一金属结构包括至少一个铝结构，至少一个铜结构或至少一个包括铝和铜的混合物的结构，并且所述至少一个第二金属结构包括至少一个钨结构。 所述至少一个第一金属结构和所述至少一个第二金属结构中的一个被激活朝向金属镀覆，而不激活所述至少一个第一金属结构和所述至少一个第二金属结构中的另一个。 还公开了一种中间半导体器件结构。

    Sloped vias in a substrate, spring-like contacts, and methods of making
    6.
    发明授权
    Sloped vias in a substrate, spring-like contacts, and methods of making 有权
    衬底中的斜槽，类似弹簧的触点，以及制作方法

    公开(公告)号：US07390740B2

    公开(公告)日：2008-06-24

    申请号：US10933847

    申请日：2004-09-02

    Applicant: James M. Wark ,  Syed S. Ahmad

    Inventor： James M. Wark ,  Syed S. Ahmad

    IPC: H01L21/44 ,  H01L21/60

    CPC classification number: H01L23/5226 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/49827 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K1/0306 ,  H05K1/115 ,  H05K3/0029 ,  H05K3/0041 ,  H05K3/4611 ,  H05K3/4629 ,  H05K2201/09836 ,  H01L2924/00

    Abstract: Methods for forming vias are disclosed. The methods include providing a substrate having a first surface and an opposing, second surface. The vias are formed within the substrate to have a longitudinal axis sloped at an angle with respect to a reference line extending perpendicular to the first surface and the second surface of the substrate. The vias may be formed from the first surface to the opposing second surface, or the via may be formed as a first blind opening from the first surface, then a second opening may be formed from the second surface to be aligned with the first opening. Vias may be formed completely through a first substrate and a second substrate, and the substrates may be bonded together. Semiconductor devices including the vias of the present invention are also disclosed. A method of forming spring-like contacts is also disclosed.

    Abstract translation: 公开了形成通孔的方法。 所述方法包括提供具有第一表面和相对的第二表面的基底。 通孔形成在衬底内，以具有相对于垂直于衬底的第一表面和第二表面延伸的参考线成一定角度倾斜的纵向轴线。 通孔可以由第一表面形成到相对的第二表面，或者通孔可以从第一表面形成为第一盲孔，然后可以从第二表面形成第二开口以与第一开口对准。 可以通过第一基板和第二基板完全形成通孔，并且基板可以结合在一起。 还公开了包括本发明的通孔的半导体器件。 还公开了一种形成弹簧状触点的方法。

    Method of making an interposer with contact structures
    9.
    发明授权
    Method of making an interposer with contact structures 有权
    制造具有接触结构的插入件的方法

    公开(公告)号：US07159311B2

    公开(公告)日：2007-01-09

    申请号：US10365874

    申请日：2003-02-13

    Applicant: James M. Wark ,  Salman Akram

    Inventor： James M. Wark ,  Salman Akram

    IPC: H01R9/00 ,  H05K3/00

    CPC classification number: H01R12/57 ,  G01R1/0408 ,  G01R1/0466 ,  H01L2924/0002 ,  H01R43/205 ,  H05K1/119 ,  H05K3/325 ,  H05K3/326 ,  H05K3/4007 ,  H05K2201/0133 ,  H05K2201/0367 ,  H05K2201/0373 ,  H05K2201/09045 ,  H05K2201/09472 ,  H05K2201/10689 ,  Y10T29/49117 ,  Y10T29/49123 ,  Y10T29/49124 ,  Y10T29/49126 ,  Y10T29/49147 ,  Y10T29/49155 ,  Y10T29/49165 ,  Y10T29/49174 ,  Y10T29/49179 ,  Y10T29/49222 ,  Y10T29/49453 ,  H01L2924/00

    Abstract: A method of making an interposer having an array of contact structures for making temporary electrical contact with the leads of a chip package. The contact structures may make contact with the leads substantially as close as desired to the body of the chip package. Moreover, the contact structures can be adapted for making contact with leads having a very fine pitch. In a first embodiment, the contact structures include raised members formed over a body of the interposer. A conductive layer is formed over each of the raised members to provide a contact surface for engaging the leads of the chip package. In another embodiment, the raised members are replaced with depressions formed into the interposer. A conductive layer is formed on an inside surface of each depression to provide a contact surface for engaging the leads of the chip package. Moreover, any combination of raised members and depressions may be used.

    Abstract translation: 一种制造具有用于与芯片封装的引线暂时电接触的接触结构阵列的插入件的方法。 接触结构可以与引线基本上接近于芯片封装体的所需位置。 此外，接触结构可以适于与具有非常细的间距的引线接触。 在第一实施例中，接触结构包括形成在插入件的主体上的凸起部件。 在每个凸起构件上形成导电层，以提供用于接合芯片封装引线的接触表面。 在另一个实施例中，凸起构件被形成在插入件中的凹陷所代替。 在每个凹陷的内表面上形成导电层，以提供用于接合芯片封装的引线的接触表面。 此外，可以使用凸起构件和凹陷的任何组合。

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