Fast wafer positioning method for optical metrology
    1.
    发明授权
    Fast wafer positioning method for optical metrology 有权
    光学测量用快速晶圆定位方法

    公开(公告)号:US07030984B2

    公开(公告)日:2006-04-18

    申请号:US10424263

    申请日:2003-04-28

    CPC classification number: G03F7/70533 G03F7/70616

    Abstract: A fast wafer positioning method for optical metrology includes three main steps. In the first step, an initial measurement recipe is constructed for the host system and target wafer. In the next step, the host system performs a test run using the initial measurement and the target wafer. In this step, the initial measurement recipe is refined to eliminate positioning errors produced by the host system. In the final step, the refined measurement recipe is used by the host system to process production wafers (e.g., as part of a production environment). This is performed using the information included in the refined measurement recipe without reference to optical images of the wafers being processed.

    Abstract translation: 用于光学测量的快速晶片定位方法包括三个主要步骤。 在第一步中,为主机系统和目标晶圆构建初始测量配方。 在下一步中,主机系统使用初始测量和目标晶圆进行测试运行。 在此步骤中,初始测量配方被细化以消除由主机系统产生的定位误差。 在最后一步中,主机系统使用精细测量配方来处理生产晶片(例如,作为生产环境的一部分)。 这是使用包括在精细测量配方中的信息而不参考正在处理的晶片的光学图像来执行的。

    Scanning focal length metrology
    2.
    发明授权
    Scanning focal length metrology 有权
    扫描焦距计量

    公开(公告)号:US07697135B1

    公开(公告)日:2010-04-13

    申请号:US11624182

    申请日:2007-01-17

    CPC classification number: G01J3/02 G01J3/0278

    Abstract: An optical metrology system collects spectral data while scanning over the focal range. The spectral data is evaluated to determine a plurality of peak intensity values for wavelengths in the spectra. The peak intensities are then combined to form the measured spectrum for the sample, which can then be used to determine the sample properties of interest. In one embodiment, the peak intensity is determined based on the measured maximum intensity and a number n of intensity values around the measured maximum intensity, e.g., using curve fitting. If desired, the number n may be varied as a function of wavelength to vary the effective spot size of the metrology system while optimizing noise performance. The peak intensity may also be derived as the measured maximum intensity or through a statistical analysis.

    Abstract translation: 光学测量系统在扫描焦距范围时收集光谱数据。 评估光谱数据以确定光谱中波长的多个峰强度值。 然后将峰强度组合以形成样品的测量光谱,然后可以将其用于确定感兴趣的样品性质。 在一个实施例中,基于所测量的最大强度和围绕测量的最大强度的强度值的数量n,例如使用曲线拟合来确定峰值强度。 如果需要,数量n可以随着波长的变化而变化,以改变测量系统的有效光斑尺寸,同时优化噪声性能。 峰值强度也可以作为测量的最大强度或统计分析得出。

    Method for noise improvement in ellipsometers
    3.
    发明授权
    Method for noise improvement in ellipsometers 失效
    椭偏仪噪声改善方法

    公开(公告)号:US07342661B2

    公开(公告)日:2008-03-11

    申请号:US11287701

    申请日:2005-11-28

    CPC classification number: G01J4/00 G01N21/211 G01N2021/213

    Abstract: A normalization procedure for an ellipsometric system having a rotating optical element such as a polarizer or compensator is disclosed. In operation, a first DC component is extracted from the measured output signals obtained during the first 180 degrees of rotation of the optical element and a second DC component is extracted from the output signals obtained during the second 180 degrees of rotation of the optical element. The first DC component is used to normalize the output signals obtained during the first 180 degrees of rotation of the optical element and the second DC component is used to normalize the output signals obtained during the second 180 degrees of rotation of the optical element.

    Abstract translation: 公开了具有诸如偏振器或补偿器之类的旋转光学元件的椭偏系统的归一化程序。 在操作中,从在光学元件的第一180度旋转期间获得的测量输出信号中提取第一DC分量,并且从在光学元件的第二180度旋转期间获得的输出信号中提取第二DC分量。 第一直流分量被用于归一化在光学元件的第一180度旋转期间获得的输出信号,并且第二直流分量用于对在光学元件的第二180度旋转期间获得的输出信号进行归一化。

    Multiple beam ellipsometer
    4.
    发明授权

    公开(公告)号:US06985228B2

    公开(公告)日:2006-01-10

    申请号:US10893449

    申请日:2004-07-16

    CPC classification number: G01N21/211 G01J4/04

    Abstract: An ellipsometric apparatus provides two impinging focused probe beams directed to reflect off the sample along two mutually distinct and preferably substantially perpendicular directions. A rotating stage rotates sections of the wafer into the travel area defined by two linear axes of two perpendicularly oriented linear stages. As a result, an entire wafer is accessed for measurement with the linear stages having a travel range of only half the wafer diameter. The reduced linear travel results in a small travel envelope occupied by the wafer and consequently in a small footprint of the apparatus. The use of two perpendicularly directed probe beams permits measurement of periodic structures along a preferred direction while permitting the use of a reduced motion stage.

    Wafer chuck with integrated reference sample
    5.
    发明授权
    Wafer chuck with integrated reference sample 失效
    带集成参考样品的晶圆卡盘

    公开(公告)号:US06952258B2

    公开(公告)日:2005-10-04

    申请号:US10843159

    申请日:2004-05-11

    CPC classification number: H01L21/67253 G01N21/01 G01N21/9501

    Abstract: The subject invention relates to a wafer stage, such as may be used in optical wafer metrology instruments. The stage contains a wafer-chuck that can be connected to translation stages for the purpose of clamping and translating the wafer so that a plurality of sites on the wafer surface may be measured. The chuck includes a holder for mounting a reference sample. The holder is movable between a retracted position where the reference sample is held below the chuck surface and an extended position, such as where the surface of the reference sample is co-planar with the wafer surface. Therefore the holder may be installed within the area of the chuck that is utilized for wafer clamping. By this arrangement, the size of the wafer translation system can be reduced minimizing the stage travel and enabling increased spatial resolution, increased wafer throughput and reduced capital equipment and operating costs.

    Abstract translation: 本发明涉及一种晶片台,例如可用于光学晶圆计量仪器。 该台包括可以连接到平台的晶片卡盘,用于夹紧和平移晶片,从而可以测量晶片表面上的多个位置。 卡盘包括用于安装参考样品的保持器。 保持器可以在参考样品保持在卡盘表面下方的缩回位置和延伸位置之间移动,例如参考样品的表面与晶片表面共面的位置。 因此,保持器可以安装在用于晶片夹紧的卡盘的区域内。 通过这种布置,可以减小晶片平移系统的尺寸,从而最小化平台行程,并且能够提高空间分辨率,增加晶片吞吐量并降低资本设备和运行成本。

    Multiple beam ellipsometer
    6.
    发明申请
    Multiple beam ellipsometer 有权
    多光束椭偏仪

    公开(公告)号:US20050002033A1

    公开(公告)日:2005-01-06

    申请号:US10893449

    申请日:2004-07-16

    CPC classification number: G01N21/211 G01J4/04

    Abstract: An ellipsometric apparatus provides two impinging focused probe beams directed to reflect off the sample along two mutually distinct and preferably substantially perpendicular directions. A rotating stage rotates sections of the wafer into the travel area defined by two linear axes of two perpendicularly oriented linear stages. As a result, an entire wafer is accessed for measurement with the linear stages having a travel range of only half the wafer diameter. The reduced linear travel results in a small travel envelope occupied by the wafer and consequently in a small footprint of the apparatus. The use of two perpendicularly directed probe beams permits measurement of periodic structures along a preferred direction while permitting the use of a reduced motion stage.

    Abstract translation: 椭圆仪器提供了两个撞击的聚焦探针光束,其被引导以沿两个相互不同的,优选地基本垂直的方向反射出样品。 旋转台将晶片的部分旋转到由两个垂直取向的线性级的两个线性轴限定的行进区域中。 结果,整个晶片被访问以进行测量,线性级的行程范围仅为晶片直径的一半。 减小的线性行程导致由晶片占据的小行程信封,因此在该设备的小占地面积内。 使用两个垂直定向的探针光束允许沿优选方向测量周期性结构,同时允许使用减小的运动级。

    Wafer chuck with integrated reference sample
    7.
    发明授权
    Wafer chuck with integrated reference sample 有权
    带集成参考样品的晶圆卡盘

    公开(公告)号:US06757059B2

    公开(公告)日:2004-06-29

    申请号:US10050653

    申请日:2002-01-14

    CPC classification number: H01L21/67253 G01N21/01 G01N21/9501

    Abstract: The subject invention relates to a translating wafer stage for use in optical wafer metrology instruments. The stage contains a wafer-chuck connected to translation stages for the purpose of clamping and translating the wafer so that a plurality of sites on the wafer surface may be measured. The chuck includes a holder for mounting a reference sample. The holder is movable between a retracted position where the reference sample is held below the chuck surface and an extended position where the surface of the reference sample is co-planar with the wafer surface. Therefore the holder may be installed within the area of the chuck that is utilized for wafer clamping. By this arrangement, the size of the wafer translation system can be reduced minimizing the stage travel and enabling increased spatial resolution, increased wafer throughput and reduced capital equipment and operating costs.

    Abstract translation: 本发明涉及用于光学晶片计量仪器的平移晶片台。 平台包含连接到平台的晶片卡盘,用于夹紧和平移晶片,以便可以测量晶片表面上的多个位置。 卡盘包括用于安装参考样品的保持器。 保持器可以在参考样品保持在卡盘表面下方的缩回位置与参考样品的表面与晶片表面共面的延伸位置之间移动。 因此,保持器可以安装在用于晶片夹紧的卡盘的区域内。 通过这种布置,可以减小晶片平移系统的尺寸,从而最小化平台行程,并且能够提高空间分辨率,增加晶片吞吐量并降低资本设备和运行成本。

    Scanning focal length metrology
    8.
    发明授权
    Scanning focal length metrology 有权
    扫描焦距计量

    公开(公告)号:US08259296B1

    公开(公告)日:2012-09-04

    申请号:US12750577

    申请日:2010-03-30

    CPC classification number: G01J3/02 G01J3/0278

    Abstract: An optical metrology system collects spectral data while scanning over the focal range. The spectral data is evaluated to determine a plurality of peak intensity values for wavelengths in the spectra. The peak intensities are then combined to form the measured spectrum for the sample, which can then be used to determine the sample properties of interest. In one embodiment, the peak intensity is determined based on the measured maximum intensity and a number n of intensity values around the measured maximum intensity, e.g., using curve fitting. If desired, the number n may be varied as a function of wavelength to vary the effective spot size of the metrology system while optimizing noise performance. The peak intensity may also be derived as the measured maximum intensity or through a statistical analysis.

    Abstract translation: 光学测量系统在扫描焦距范围时收集光谱数据。 评估光谱数据以确定光谱中波长的多个峰强度值。 然后将峰强度组合以形成样品的测量光谱,然后可以将其用于确定感兴趣的样品性质。 在一个实施例中,基于所测量的最大强度和围绕测量的最大强度的强度值的数量n,例如使用曲线拟合来确定峰值强度。 如果需要,数量n可以随着波长的变化而变化,以改变测量系统的有效光斑尺寸,同时优化噪声性能。 峰值强度也可以作为测量的最大强度或统计分析得出。

    Multiple beam ellipsometer
    9.
    发明申请
    Multiple beam ellipsometer 有权
    多光束椭偏仪

    公开(公告)号:US20070030485A1

    公开(公告)日:2007-02-08

    申请号:US11545434

    申请日:2006-10-10

    CPC classification number: G01N21/211 G01J4/04

    Abstract: An ellipsometric apparatus provides two impinging focused probe beams directed to reflect off the sample along two mutually distinct and preferably substantially perpendicular directions. A rotating stage rotates sections of the wafer into the travel area defined by two linear axes of two perpendicularly oriented linear stages. As a result, an entire wafer is accessed for measurement with the linear stages having a travel range of only half the wafer diameter. The reduced linear travel results in a small travel envelope occupied by the wafer and, consequently, a small footprint of the apparatus. The use of two perpendicularly directed probe beams permits measurement of periodic structures along a preferred direction while permitting the use of a reduced motion stage.

    Abstract translation: 椭圆仪器提供了两个撞击的聚焦探针光束,其被引导以沿两个相互不同的,优选地基本垂直的方向反射出样品。 旋转台将晶片的部分旋转到由两个垂直取向的线性级的两个线性轴限定的行进区域中。 结果,整个晶片被访问用于测量,线性级的行程范围仅为晶片直径的一半。 减小的线性行程导致由晶片占据的小行程信封,并且因此导致该装置的小占地面积。 使用两个垂直定向的探针光束允许沿优选方向测量周期性结构,同时允许使用减小的运动级。

    Multiple beam ellipsometer
    10.
    发明授权
    Multiple beam ellipsometer 有权
    多光束椭偏仪

    公开(公告)号:US07136164B2

    公开(公告)日:2006-11-14

    申请号:US11256841

    申请日:2005-10-24

    CPC classification number: G01N21/211 G01J4/04

    Abstract: An ellipsometric apparatus provides two impinging focused probe beams directed to reflect off the sample along two mutually distinct and preferably substantially perpendicular directions. A rotating stage rotates sections of the wafer into the travel area defined by two linear axes of two perpendicularly oriented linear stages. As a result, an entire wafer is accessed for measurement with the linear stages having a travel range of only half the wafer diameter. The reduced linear travel results in a small travel envelope occupied by the wafer and, consequently, a small footprint of the apparatus. The use of two perpendicularly directed probe beams permits measurement of periodic structures along a preferred direction while permitting the use of a reduced motion stage.

    Abstract translation: 椭圆仪器提供了两个撞击的聚焦探针光束,其被引导以沿两个相互不同的,优选地基本上垂直的方向反射出样品。 旋转台将晶片的部分旋转到由两个垂直取向的线性级的两个线性轴限定的行进区域中。 结果,整个晶片被访问用于测量,线性级的行程范围仅为晶片直径的一半。 减小的线性行程导致由晶片占据的小行程信封,并且因此导致该装置的小占地面积。 使用两个垂直定向的探针光束允许沿优选方向测量周期性结构,同时允许使用减小的运动级。

Patent Agency Ranking