公开(公告)号：US20180203361A1

公开(公告)日：2018-07-19

申请号：US15763829

申请日：2016-10-05

Applicant: ASELTA NANOGRAPHICS

Inventor： Mohamed SAIB ,  Patrick SCHIAVONE ,  Thiago FIGUEIRO ,  Sébastien BAYLE

IPC: G03F7/20

CPC classification number: G03F7/705 ,  G03F7/70458 ,  G03F7/70516

Abstract: A method is provided to easily determine the parameters of a second process for manufacturing from the parameters of a first process. Metrics representative of the differences between the two processes are computed from a number of values of the parameters, which can be measured for the two processes on a calibration layout, or which can be determined from pre-existing values for layouts or reference data for the two processes by an interpolation/extrapolation procedure. The number of metrics is selected so that their combination gives a precise representation of the differences between the two processes in all areas of a design. Advantageously, the metrics are calculated as a product of convolution of the target design and a compound of a kernel function and a deformation function. A reference physical model of the reference process is determined. A sizing correction to be applied to the edges of the design produced by the reference process is calculated. It is then converted, totally or partially, into a dose correction.

公开(公告)号：US20180204707A1

公开(公告)日：2018-07-19

申请号：US15742003

申请日：2016-07-19

Applicant: ASELTA NANOGRAPHICS

Inventor： Mohamed SAIB ,  Patrick SCHIAVONE ,  Thiago FIGUEIRO

IPC: H01J37/302 ,  H01J37/317

Abstract: A method for transferring a pattern onto a substrate by direct writing by means of a particle or photon beam comprises: a step of producing a dose map, associating a dose to elementary shapes of the pattern; and a step of exposing the substrate according to the pattern with a spatially-dependent emitted dose depending on the dose map; wherein the step of producing a dose map includes: computing at least first and second metrics of the pattern for each of the elementary shapes, the first metric representative of features of the pattern within a first range from the elementary shape and the second metric representative of features of the pattern within a second range, larger than the first range, from the elementary shape; and determining the emitted dose associated to each of the elementary shapes of the pattern as a function of the metrics. A computer program product is provided for carrying out such a method or at least the step of producing a dose map.

公开(公告)号：US20170168401A1

公开(公告)日：2017-06-15

申请号：US15327330

申请日：2015-07-30

Applicant: ASELTA NANOGRAPHICS

Inventor： Mohamed SAIB ,  Patrick SCHIAVONE ,  Thiago FIGUEIRO

IPC: G03F7/20 ,  G03F1/36 ,  H01J37/302 ,  H01J37/317

CPC classification number: G03F7/70441 ,  G03F1/26 ,  G03F1/36 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31769 ,  H01J2237/31796

Abstract: An IC manufacturing model is disclosed, wherein input variables and an output variable are measured using a calibration set of patterns. The model can or cannot include a PSF. The output variable may be a dimensional bias between printed patterns and target patterns or simulated patterns. It can also be a Threshold To Meet Experiments. The input variables may be defined by a metric which uses kernel functions, preferably with a deformation function which includes a shift angle and a convolution procedure. A functional or associative relationship between the input variables and the output variable is defined. Preferably this definition includes normalization steps and interpolation steps. Advantageously, the interpolation step is of the kriging type. The invention achieves a much more accurate modeling of IC manufacturing, simulation or inspection processes.