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    METHOD FOR CALCULATING THE METRICS OF AN IC MANUFACTURING PROCESS
    1.
    发明申请
    METHOD FOR CALCULATING THE METRICS OF AN IC MANUFACTURING PROCESS 有权

    公开(公告)号：US20170123322A1

    公开(公告)日：2017-05-04

    申请号：US15310709

    申请日：2015-06-02

    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ,  ASELTA NANOGRAPHICS

    Inventor： Mohamed SAÏB ,  Aurélien FAY ,  Patrick SCHIAVONE ,  Thiago FIGUEIRO

    IPC: G03F7/20 ,  G06F17/50

    Abstract: A method for calculating the parameters of a resist model of an IC manufacturing process is provided. Accordingly, a function representative of the target design convoluted throughout the whole target design with a kernel function compounded with a deformation function with a shift angle. The deformation function is replaced by its Fourier series development, the order of which is selected so that the product of convolution is invariant through rotations within a tolerance of the corrections to be applied to the target design. Alternatively, the product of convolution may be decomposed into basic kernel functions selected varying by angles determined so that a deformation function for a value of the shift angle can be projected onto a couple of basic kernel functions the angles of which are proximate to the shift angle.

    METHOD OF CORRECTING ELECTRON PROXIMITY EFFECTS USING VOIGT TYPE SCATTERING FUNCTIONS
    2.
    发明申请
    METHOD OF CORRECTING ELECTRON PROXIMITY EFFECTS USING VOIGT TYPE SCATTERING FUNCTIONS 有权
    使用VOIGT类型散射函数校正电子近似效应的方法

    公开(公告)号：US20130275098A1

    公开(公告)日：2013-10-17

    申请号：US13861284

    申请日：2013-04-11

    Applicant: ASELTA NANOGRAPHICS

    Inventor： Jean-Herve TORTAI ,  Patrick SCHIAVONE ,  Thiago FIGUEIRO ,  Nader JEDIDI

    IPC: G06F17/50

    CPC classification number: G06F17/5009 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/2059 ,  H01J37/222 ,  H01J37/3174 ,  H01J2237/226 ,  H01J2237/31769

    Abstract: A method for projecting an electron beam used notably in lithography by direct or indirect writing as well as in electron microscopy, is provided. Notably for critical dimensions or resolutions of less than 50 nm, the proximity effects created by the forward and backward scattering of the electrons of the beam in interaction with the target must be corrected. This is traditionally done using the convolution of a point spread function with the geometry of the target. In the prior art, said point spread function uses Gaussian distribution laws. At least one of the components of the point spread function is a linear combination of Voigt functions and/or of functions approximating Voigt functions, such as the Pearson VII functions. In certain embodiments, some of the functions are centered on the backward scattering peaks of the radiation.

    Abstract translation: 提供了一种用于通过直接或间接书写以及电子显微镜投射用于光刻中的电子束的方法。 值得注意的是，对于小于50nm的关键尺寸或分辨率，必须校正与目标相互作用的光束的电子的向前和向后散射产生的邻近效应。 传统上使用点扩散函数与目标几何的卷积完成。 在现有技术中，所述点扩散函数使用高斯分布规律。 点扩散函数的分量中的至少一个是Voigt函数和/或接近Voigt函数的函数的线性组合，例如Pearson VII函数。 在某些实施例中，一些功能以辐射的向后散射峰为中心。

    METHOD FOR DETERMINING THE DOSE CORRECTIONS TO BE APPLIED TO AN IC MANUFACTURING PROCESS BY A MATCHING PROCEDURE
    3.
    发明申请
    METHOD FOR DETERMINING THE DOSE CORRECTIONS TO BE APPLIED TO AN IC MANUFACTURING PROCESS BY A MATCHING PROCEDURE 审中-公开

    公开(公告)号：US20180203361A1

    公开(公告)日：2018-07-19

    申请号：US15763829

    申请日：2016-10-05

    Applicant: ASELTA NANOGRAPHICS

    Inventor： Mohamed SAIB ,  Patrick SCHIAVONE ,  Thiago FIGUEIRO ,  Sébastien BAYLE

    IPC: G03F7/20

    CPC classification number: G03F7/705 ,  G03F7/70458 ,  G03F7/70516

    Abstract: A method is provided to easily determine the parameters of a second process for manufacturing from the parameters of a first process. Metrics representative of the differences between the two processes are computed from a number of values of the parameters, which can be measured for the two processes on a calibration layout, or which can be determined from pre-existing values for layouts or reference data for the two processes by an interpolation/extrapolation procedure. The number of metrics is selected so that their combination gives a precise representation of the differences between the two processes in all areas of a design. Advantageously, the metrics are calculated as a product of convolution of the target design and a compound of a kernel function and a deformation function. A reference physical model of the reference process is determined. A sizing correction to be applied to the edges of the design produced by the reference process is calculated. It is then converted, totally or partially, into a dose correction.

    METHOD OF PERFORMING DOSE MODULATION, IN PARTICULAR FOR ELECTRON BEAM LITHOGRAPHY
    5.
    发明申请
    METHOD OF PERFORMING DOSE MODULATION, IN PARTICULAR FOR ELECTRON BEAM LITHOGRAPHY 审中-公开

    公开(公告)号：US20180204707A1

    公开(公告)日：2018-07-19

    申请号：US15742003

    申请日：2016-07-19

    Applicant: ASELTA NANOGRAPHICS

    Inventor： Mohamed SAIB ,  Patrick SCHIAVONE ,  Thiago FIGUEIRO

    IPC: H01J37/302 ,  H01J37/317

    Abstract: A method for transferring a pattern onto a substrate by direct writing by means of a particle or photon beam comprises: a step of producing a dose map, associating a dose to elementary shapes of the pattern; and a step of exposing the substrate according to the pattern with a spatially-dependent emitted dose depending on the dose map; wherein the step of producing a dose map includes: computing at least first and second metrics of the pattern for each of the elementary shapes, the first metric representative of features of the pattern within a first range from the elementary shape and the second metric representative of features of the pattern within a second range, larger than the first range, from the elementary shape; and determining the emitted dose associated to each of the elementary shapes of the pattern as a function of the metrics. A computer program product is provided for carrying out such a method or at least the step of producing a dose map.

    METHOD FOR DETERMINING THE PARAMETERS OF AN IC MANUFACTURING PROCESS BY A DIFFERENTIAL PROCEDURE
    7.
    发明申请
    METHOD FOR DETERMINING THE PARAMETERS OF AN IC MANUFACTURING PROCESS BY A DIFFERENTIAL PROCEDURE 审中-公开
    通过差分程序确定IC制造工艺参数的方法

    公开(公告)号：US20170075225A1

    公开(公告)日：2017-03-16

    申请号：US15310731

    申请日：2015-06-03

    Applicant: ASELTA NANOGRAPHICS

    Inventor： Mohamed SAÏB ,  Patrick SCHIAVONE ,  Thiago FIGUEIRO

    IPC: G03F7/20 ,  G06F17/50

    CPC classification number: G03F7/705 ,  G03F7/70458 ,  G03F7/70516 ,  G06F17/5072 ,  G06F2217/06 ,  G06F2217/12

    Abstract: A method to easily determine the parameters of a second process for manufacturing from the parameters of a first process is provided. Metrics representative of the differences between the two processes are computed from a number of values of the parameters, which can be measured for the two processes on a calibration layout, or which can be determined from pre-existing values for layouts or reference data for the two processes by an interpolation/extrapolation procedure. The number of metrics is selected so that their combination gives a precise representation of the differences between the two processes in all areas of a design. Advantageously, the metrics are calculated as a product of convolution of the target design and a compound of a kernel function and a deformation function.

    Abstract translation: 提供了一种从第一过程的参数容易地确定第二制造过程的参数的方法。 代表两个过程之间的差异的度量是根据参数的数值计算的，这些参数值可以在校准布局上测量两个过程，或者可以根据布局的预先存在的值或者为 通过插值/外推程序进行两个处理。 选择度量的数量，使得它们的组合给出了在设计的所有区域中的两个过程之间的差异的精确表示。 有利地，度量被计算为目标设计的卷积与核函数和变形函数的化合物的乘积。

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