公开(公告)号：US20180158709A1

公开(公告)日：2018-06-07

申请号：US15370834

申请日：2016-12-06

Applicant: ASM IP Holding B.V.

Inventor： Naoto TSUJI ,  Takuya SUGURI ,  Yozo IKEDO

IPC: H01L21/683 ,  H02H7/00 ,  C23C16/448 ,  C23C16/50

CPC classification number: C23C16/50 ,  C23C16/503 ,  H01J37/00 ,  H01L21/6833

Abstract: A substrate treatment apparatus includes a lower electrode, an upper electrode, a first AC power supply that is connected to the upper electrode and supplies AC power at a first frequency, a second AC power supply that is connected to the upper electrode and supplies AC power at a second frequency which is lower than the first frequency, an internal electrode provided in the lower electrode, a filter circuit connected to the internal electrode, and a DC power supply connected to the internal electrode via the filter circuit. The filter circuit includes a first filter circuit that becomes low impedance with respect to AC power at the first frequency compared to AC power at the second frequency, and a second filter circuit that becomes low impedance with respect to AC power at the second frequency compared to AC power at the first frequency.

公开(公告)号：US20160237559A1

公开(公告)日：2016-08-18

申请号：US14621167

申请日：2015-02-12

Applicant: ASM IP Holding B.V.

Inventor： Naoto TSUJI

IPC: C23C16/44 ,  H01L21/67 ,  C23C16/50 ,  H01J37/32 ,  C23C16/455

CPC classification number: C23C16/4412 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32834

Abstract: A semiconductor manufacturing apparatus includes a stage, and an exhaust duct having an annular passage surrounding a processing space over the stage, an annular slit through which a gas supplied to the processing space is led into the annular passage, and an exhaust port through which the gas in the annular passage is discharged to the outside, wherein the opening-area percentage of the slit is increased with increase in distance from the exhaust port.

Abstract translation: 一种半导体制造装置，包括台架和排气管道，该排气管道具有环绕工作台的处理空间的环形通道，供给到处理空间的气体通过该环状狭缝被引导到环形通道中，以及排气口， 环形通道中的气体被排放到外部，其中狭缝的开口面积百分比随着与排气口的距离的增加而增加。

公开(公告)号：US20160153088A1

公开(公告)日：2016-06-02

申请号：US14557774

申请日：2014-12-02

Applicant: ASM IP Holding B.V.

Inventor： Naoto TSUJI ,  Kazuo SATO ,  Takayuki YAMAGISHI

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/52 ,  C23C16/458

CPC classification number: C23C16/4412 ,  C23C16/4408 ,  C23C16/45544 ,  C23C16/45565 ,  H01J37/3244

Abstract: A film forming apparatus includes a susceptor, and a shower head provided above the susceptor and having a first passage and a second passage independent of the first passage formed therein, wherein the first passage is formed through the shower head by being provided with a first cavity surrounded by a first upper wall and a first lower wall, a first thin hole formed in the first upper wall, and a plurality of second thin holes formed in the first lower wall, the height of the first upper wall in the vertical direction is reduced with increase in distance from the first thin hole, and the second passage is formed in the same manner as the first passage.

Abstract translation: 一种成膜设备包括一个基座和一个设置在基座上方的淋浴喷头，具有独立于其中形成的第一通道的第一通道和第二通道，其中第一通道通过设置有第一腔体 由第一上壁和第一下壁围绕，形成在第一上壁中的第一细孔和形成在第一下壁中的多个第二细孔，第一上壁在垂直方向上的高度减小 与第一细孔的距离增加，第二通道以与第一通道相同的方式形成。