公开(公告)号：US20220005723A1

公开(公告)日：2022-01-06

申请号：US17368134

申请日：2021-07-06

Applicant: Applied Materials, Inc.

Inventor： Hanish Kumar Panavalappil Kumarankutty ,  Sean M. Seutter ,  Sudhir R. Gondhalekar ,  Wendell Glenn Boyd, JR. ,  Badri Ramamurthi ,  Shekhar Athani ,  Anil Kumar Kalal ,  Jay Dee Pinson, II

IPC: H01L21/683 ,  H01J37/32

Abstract: Embodiments of the disclosure provide electrostatic chucks for securing substrates during processing. Some embodiments of this disclosure provide methods and apparatus for increased temperature control across the radial profile of the substrate. Some embodiments of the disclosure provide methods and apparatus for providing control of hydrogen concentration in processed films during a high-density plasma (HDP) process.

公开(公告)号：US11984302B2

公开(公告)日：2024-05-14

申请号：US17088407

申请日：2020-11-03

Applicant: Applied Materials, Inc.

Inventor： Job George Konnoth Joseph ,  Sathya Swaroop Ganta ,  Kallol Bera ,  Andrew Nguyen ,  Jay D. Pinson, II ,  Akshay Dhanakshirur ,  Kaushik Comandoor Alayavalli ,  Canfeng Lai ,  Ren-Guan Duan ,  Jennifer Y. Sun ,  Anil Kumar Kalal ,  Abhishek Pandey

IPC: H01J37/32 ,  H01J37/20

CPC classification number: H01J37/32669 ,  H01J37/20 ,  H01J2237/0264

Abstract: A plasma chamber includes a chamber body having a processing region therewithin, a liner disposed on the chamber body, the liner surrounding the processing region, a substrate support disposed within the liner, a magnet assembly comprising a plurality of magnets disposed around the liner, and a magnetic-material shield disposed around the liner, the magnetic-material shield encapsulating the processing region near the substrate support.