公开(公告)号：US11522126B2

公开(公告)日：2022-12-06

申请号：US16601250

申请日：2019-10-14

Applicant: Applied Materials, Inc.

Inventor： Lin Xue ,  Jaesoo Ahn ,  Sahil Patel ,  Chando Park ,  Mahendra Pakala

IPC: H01L43/12 ,  H01L43/08 ,  G11C11/16 ,  G11B5/39 ,  H01L43/10 ,  H01L27/22 ,  H01L43/02

Abstract: A film stack for a magnetic tunnel comprises a substrate, a magnetic reference layer disposed over the substrate, and a tunnel barrier layer disposed over the magnetic reference layer. The film stack further comprises a magnetic storage layer disposed over the tunnel barrier layer, and a capping layer disposed over the magnetic storage layer. Further, the film stack comprises at least one protection layer disposed between the magnetic reference layer and the tunnel barrier layer and disposed between the magnetic storage layer and the capping layer. Additionally, a material forming the at least one protection layer differs from at least one of a material forming the magnetic reference layer and a material forming the magnetic storage layer.

公开(公告)号：US10923652B2

公开(公告)日：2021-02-16

申请号：US16448709

申请日：2019-06-21

Applicant: Applied Materials, Inc.

Inventor： Lin Xue ,  Chando Park ,  Chi Hong Ching ,  Jaesoo Ahn ,  Mahendra Pakala

IPC: H01L43/12 ,  H01L43/02 ,  G11C11/16 ,  C23C14/54 ,  H01F10/32 ,  H01L43/10 ,  H01F41/32 ,  C23C14/06 ,  H01L21/67 ,  H01F10/13

Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a junction structure disposed on a substrate, the junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a dielectric capping layer disposed on the junction structure, a metal capping layer disposed on the junction structure, and a top buffer layer disposed on the metal capping layer.

公开(公告)号：US10756259B2

公开(公告)日：2020-08-25

申请号：US16290621

申请日：2019-03-01

Applicant: Applied Materials, Inc.

Inventor： Jaesoo Ahn ,  Chando Park ,  Hsin-wei Tseng ,  Lin Xue ,  Mahendra Pakala

IPC: H01L27/00 ,  H01L43/00 ,  H01L43/12 ,  H01L43/02 ,  H01L43/10 ,  H01L27/22

Abstract: The bottom-pinned spin-orbit torque (SOT) MRAM devices are fabricated to form high quality interfaces between layers including the spin-orbit torque (SOT) layer and the free layer of the magnetic tunnel junction (MTJ) by forming those layers under vacuum, without breaking vacuum in between formation of the layers. An encapsulation layer is used as an etch stop and to protect the free layer. The encapsulation layer is etched back prior to the deposition of a metal layer. The metal layer forms a plurality of metal lines that are electrically connected to two or more sides of the SOT layer and are electrically coupled to the SOT layer to transfer current through the SOT layer. The metal lines are not in contact with a top surface of the SOT layer which has a dielectric layer disposed thereon.

公开(公告)号：US12201030B2

公开(公告)日：2025-01-14

申请号：US18231414

申请日：2023-08-08

Applicant: Applied Materials, Inc.

Inventor： Minrui Yu ,  Wenhui Wang ,  Jaesoo Ahn ,  Jong Mun Kim ,  Sahil Patel ,  Lin Xue ,  Chando Park ,  Mahendra Pakala ,  Chentsau Chris Ying ,  Huixiong Dai ,  Christopher S. Ngai

IPC: H10N50/10 ,  G01R33/09 ,  G11C11/16 ,  H10B61/00 ,  H10N50/85 ,  H10N52/01 ,  H10N52/80

Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.

公开(公告)号：US11621393B2

公开(公告)日：2023-04-04

申请号：US17112484

申请日：2020-12-04

Applicant: Applied Materials, Inc.

Inventor： Lin Xue ,  Chando Park ,  Chi Hong Ching ,  Jaesoo Ahn ,  Mahendra Pakala

IPC: H01L43/12 ,  C23C14/06 ,  C23C14/54 ,  H01F10/32 ,  H01F41/32 ,  H01L43/10 ,  H01L43/02 ,  H01F10/13 ,  H01L21/67 ,  C23C14/00 ,  H01F41/30 ,  H01F10/30 ,  G11C11/16

Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a magnetic tunnel junction (MTJ) device structure includes a junction structure disposed on a substrate, the junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a dielectric capping layer disposed on the junction structure, a metal capping layer disposed on the junction structure, and a top buffer layer disposed on the metal capping layer.

公开(公告)号：US11818959B2

公开(公告)日：2023-11-14

申请号：US17379780

申请日：2021-07-19

Applicant: Applied Materials, Inc.

Inventor： Hsin-wei Tseng ,  Chando Park ,  Jaesoo Ahn ,  Lin Xue ,  Mahendra Pakala

IPC: H10N50/85 ,  H10N50/01 ,  H10B61/00 ,  H10N50/80

CPC classification number: H10N50/01 ,  H10B61/00 ,  H10N50/80 ,  H10N50/85

Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in for hybrid (or called integrated) spin-orbit-torque magnetic spin-transfer-torque magnetic random access memory (SOT-STT MRAM) applications. In one embodiment, the method includes one or more magnetic tunnel junction structures disposed on a substrate, the magnetic tunnel junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a spin orbit torque (SOT) layer disposed on the magnetic tunnel junction structure, and a back end structure disposed on the spin orbit torque (SOT) layer.

公开(公告)号：US11723283B2

公开(公告)日：2023-08-08

申请号：US16871779

申请日：2020-05-11

Applicant: Applied Materials, Inc.

Inventor： Minrui Yu ,  Wenhui Wang ,  Jaesoo Ahn ,  Jong Mun Kim ,  Sahil Patel ,  Lin Xue ,  Chando Park ,  Mahendra Pakala ,  Chentsau Chris Ying ,  Huixiong Dai ,  Christopher S. Ngai

IPC: H10N50/10 ,  G01R33/09 ,  G11C11/16 ,  H10B61/00 ,  H10N50/85 ,  H10N52/01 ,  H10N52/80

CPC classification number: H10N50/10 ,  G01R33/095 ,  G01R33/098 ,  G11C11/161 ,  H10B61/00 ,  H10N50/85 ,  H10N52/01 ,  H10N52/80

Abstract: Embodiments of the present disclosure generally include spin-orbit torque magnetoresistive random-access memory (SOT-MRAM) devices and methods of manufacture thereof. The SOT-MRAM devices described herein include an SOT layer laterally aligned with a magnetic tunnel junction (MTJ) stack and formed over a trench in an interconnect. Thus, the presence of the SOT layer outside the area of the MTJ stack is eliminated, and electric current passes from the interconnect to the SOT layer by SOT-interconnect overlap. The devices and methods described herein reduce the formation of shunting current and enable the MTJ to self-align with the SOT layer in a single etching process.

公开(公告)号：US11145808B2

公开(公告)日：2021-10-12

申请号：US16681351

申请日：2019-11-12

Applicant: Applied Materials, Inc.

Inventor： Jong Mun Kim ,  Minrui Yu ,  Chando Park ,  Mang-Mang Ling ,  Jaesoo Ahn ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Mahendra Pakala ,  Ellie Y. Yieh

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  H01L27/22

Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate for MRAM applications. In one embodiment, a method for forming a magnetic tunnel junction (MTJ) device structure includes performing a patterning process by an ion beam etching process in a processing chamber to pattern a film stack disposed on a substrate, wherein the film stack comprises a reference layer, a tunneling barrier layer and a free layer disposed on the tunneling barrier, and determining an end point for the patterning process.

公开(公告)号：US12075628B2

公开(公告)日：2024-08-27

申请号：US17423435

申请日：2020-01-16

Applicant: Applied Materials, Inc.

Inventor： Lin Xue ,  Chando Park ,  Jaesoo Ahn ,  Hsin-wei Tseng ,  Mahendra Pakala

IPC: H10B61/00 ,  G11C11/16 ,  H10N50/80 ,  H10N50/85 ,  H10N50/01

CPC classification number: H10B61/00 ,  G11C11/161 ,  H10N50/80 ,  H10N50/85 ,  H10N50/01

Abstract: Implementations of the present disclosure generally relate to a memory device. More specifically, implementations described herein generally relate to a SOT-MRAM. The SOT-MRAM includes a memory cell having a magnetic storage layer disposed side by side and in contact with a SOT layer. The side by side magnetic storage layer and the SOT layer can achieve the switching of the magnetic storage layer by reversing the direction of the electrical current flowing through the SOT layer without any additional conditions.

公开(公告)号：US11069853B2

公开(公告)日：2021-07-20

申请号：US16195313

申请日：2018-11-19

Applicant: Applied Materials, Inc.

Inventor： Hsin-Wei Tseng ,  Chando Park ,  Jaesoo Ahn ,  Lin Xue ,  Mahendra Pakala

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/02 ,  H01L43/10

Abstract: Embodiments of the disclosure provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in for hybrid (or called integrated) spin-orbit-torque magnetic spin-transfer-torque magnetic random access memory (SOT-STT MRAM) applications. In one embodiment, the method includes one or more magnetic tunnel junction structures disposed on a substrate, the magnetic tunnel junction structure comprising a first ferromagnetic layer and a second ferromagnetic layer sandwiching a tunneling barrier layer, a spin orbit torque (SOT) layer disposed on the magnetic tunnel junction structure, and a back end structure disposed on the spin orbit torque (SOT) layer.