公开(公告)号：US11798775B2

公开(公告)日：2023-10-24

申请号：US17491084

申请日：2021-09-30

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Neil Bassom ,  Jonathan David

IPC: H01J27/00 ,  H01J37/08 ,  H01J37/075 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/075 ,  H01J37/3171

Abstract: An ion source has an arc chamber with a first end and a second end. A first cathode at the first end of the arc chamber has a first cathode body and a first filament disposed within the first cathode body. A second cathode at the second end of the arc chamber has a second cathode body and a second filament disposed within the second cathode body. A filament switch selectively electrically couples a filament power supply to each of the first filament and the second filament, respectively, based on a position of the filament switch. A controller controls the position of the filament switch to alternate the electrical coupling of the filament power supply between the first filament and the second filament for a plurality of switching cycles based on predetermined criteria. The predetermined criteria can be a duration of operation of the first filament and second filament.

公开(公告)号：US20230307210A1

公开(公告)日：2023-09-28

申请号：US17705503

申请日：2022-03-28

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Neil Bassom

IPC: H01J37/317 ,  H01L21/04 ,  G21K5/04 ,  H01J37/147

CPC classification number: H01J37/3171 ,  H01L21/0415 ,  G21K5/04 ,  H01J37/1475

Abstract: An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.

公开(公告)号：US20240029998A1

公开(公告)日：2024-01-25

申请号：US18481111

申请日：2023-10-04

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Neil Bassom

IPC: H01J37/317 ,  G21K5/04 ,  H01J37/147 ,  H01L21/04

CPC classification number: H01J37/3171 ,  G21K5/04 ,  H01J37/1475 ,  H01L21/0415

Abstract: An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.

公开(公告)号：US10573485B1

公开(公告)日：2020-02-25

申请号：US16227296

申请日：2018-12-20

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Edward Eisner ,  Bo Vanderberg ,  Neil Bassom ,  Michael Cristoforo ,  Joshua Abeshaus

IPC: H01J37/08 ,  H01J37/317

Abstract: An electrode system for an ion source has a source electrode that defines a source aperture in an ion source chamber, and is coupled to a source power supply. A first ground electrode defines a first ground aperture that is electrically coupled to an electrical ground potential and extracts ions from the ion source. A suppression electrode is positioned downstream of the first ground electrode and defines a suppression aperture that is electrically coupled to a suppression power supply. A second ground electrode is positioned downstream of the suppression electrode and defines a second ground aperture. The first and second ground electrodes are fixedly coupled to one another and are electrically coupled to the electrical ground potential.

公开(公告)号：US20250104965A1

公开(公告)日：2025-03-27

申请号：US18474402

申请日：2023-09-26

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Shu Satoh ,  Neil Bassom

IPC: H01J37/317 ,  C23C14/48 ,  H01J37/147

Abstract: A high-energy ion implantation system has an ion source and mass analyzer to form and analyze an ion beam along a beam path. A first RF LINAC accelerates the ion beam to a first accelerator exit, and a second RF LINAC accelerates the ion beam to a second accelerator exit along the beam path. A first magnet between the first and second RF LINACs alters the beam path along a first plane. A third RF LINAC accelerates the ion beam, and a second magnet between the second and third RF LINACs alters the beam path along a second plane. A beam shaping apparatus defines a shape of the ion beam, and a third magnet between the third RF LINAC beam shaping apparatus alters the beam path along a third plane, where the first, second, and third planes are not coplanar.

公开(公告)号：US20230139138A1

公开(公告)日：2023-05-04

申请号：US17514262

申请日：2021-10-29

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Shu Satoh ,  Neil Bassom

IPC: H01J37/317 ,  H01L21/265 ,  H01J37/08 ,  H05H9/00

Abstract: An ion implantation system has an ion source to generate an ion beam, and a mass analyzer to define a first ion beam having desired ions at a first charge state. A first linear accelerator accelerates the first ion beam to a plurality of first energies. A charge stripper strips electrons from the desired ions defining a second ion beam at a plurality of second charge states. A first dipole magnet spatially disperses and bends the second ion beam at a first angle. A charge defining aperture passes a desired charge state of the second ion beam while blocking a remainder of the plurality of second charge states. A quadrupole apparatus spatially focuses the second ion beam, defining a third ion beam. A second dipole magnet bends the third ion beam at a second angle. A second linear accelerator accelerates the third ion beam. A final energy magnet bends the third ion beam at a third angle, and wherein an energy defining aperture passes only the desired ions at a desired energy and charge state.

公开(公告)号：US20210398772A1

公开(公告)日：2021-12-23

申请号：US17348031

申请日：2021-06-15

Applicant: Axcelis Technologies, Inc.

Inventor： Shu Satoh ,  Wilhelm Platow

IPC: H01J37/317 ,  H01J37/147 ,  H01J37/09 ,  H01J37/141 ,  H01J37/153 ,  H01J37/21

Abstract: An ion implantation system has an ion source configured to form an ion beam. A mass analyzer mass analyzes the ion beam, a scanning element scans the ion beam in a horizontal direction and a parallelizing lens translates the fanned-out scanned beam into parallel shifting scanning ion beam. For applications needing not only a mean incident angle, but highly-aligned ion incident angles and a tight angular distribution, a slit apparatus is positioned at horizontal and/or vertical front focal points of the parallelizing lens. Minimum horizontal and/or vertical angular distributions of the ion beam on the workpiece are attained by controlling a beam focusing lens upstream of the scanning element for the best beam transmission through the slit system.

公开(公告)号：US20210398765A1

公开(公告)日：2021-12-23

申请号：US17330801

申请日：2021-05-26

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Neil Bassom ,  Shu Satoh ,  Paul Silverstein ,  Marvin Farley

IPC: H01J1/02 ,  H01J1/52

Abstract: An ion source for forming a plasma has a cathode with a cavity and a cathode surface defining a cathode step. A filament is disposed within the cavity, and a cathode shield has a cathode shield surface at least partially encircling the cathode surface. A cathode gap is defined between the cathode surface and the cathode shield surface, where the cathode gap defines a tortured path for limiting travel of the plasma through the gap. The cathode surface can have a stepped cylindrical surface defined by a first cathode diameter and a second cathode diameter, where the first cathode diameter and second cathode diameter differ from one another to define the cathode step. The stepped cylindrical surface can be an exterior surface or an interior surface. The first and second cathode diameters can be concentric or axially offset.

公开(公告)号：US12112918B2

公开(公告)日：2024-10-08

申请号：US18481111

申请日：2023-10-04

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Neil Bassom

IPC: H01J37/317 ,  G21K5/04 ,  H01J37/147 ,  H01L21/04

CPC classification number: H01J37/3171 ,  G21K5/04 ,  H01J37/1475 ,  H01L21/0415

Abstract: An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.

公开(公告)号：US11823858B2

公开(公告)日：2023-11-21

申请号：US17705503

申请日：2022-03-28

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Neil Bassom

IPC: A61N5/10 ,  H01J37/317 ,  H01J37/147 ,  G21K5/04 ,  H01L21/04

CPC classification number: H01J37/3171 ,  G21K5/04 ,  H01J37/1475 ,  H01L21/0415

Abstract: An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.