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1.Method for manufacturing a carbon nanotube field emission device with overhanging gate 有权
Title translation: 制造具有突出门的碳纳米管场致发射器件的方法公开(公告)号:US08916394B2
公开(公告)日:2014-12-23
申请号:US13919842
申请日:2013-06-17
Applicant: California Institute of Technology
Inventor: Risaku Toda , Michael J. Bronikowski , Edward M. Luong , Harish Manohara
CPC classification number: H01L21/302 , B82Y10/00 , B82Y20/00 , B82Y40/00 , H01J1/3042 , H01J1/3044 , H01J3/021 , H01J3/022 , H01J9/025 , H01J2203/0224 , Y10S977/842 , Y10S977/939
Abstract: A carbon nanotube field emission device with overhanging gate fabricated by a double silicon-on-insulator process. Other embodiments are described and claimed.
Abstract translation: 具有通过双硅绝缘体工艺制造的具有悬垂栅极的碳纳米管场发射器件。 描述和要求保护其他实施例。