公开(公告)号：US11515210B2

公开(公告)日：2022-11-29

申请号：US17024926

申请日：2020-09-18

Applicant: DISCO CORPORATION

Inventor： Kenya Kai ,  Kentaro Odanaka

IPC: H01L21/66 ,  H01L21/78 ,  H01L21/67

Abstract: A wafer processing method includes a liquid layer forming step of forming a layer of a liquid on a supporting face of a wafer table included in a supporting unit, a fixing step of placing a side of an adhesive sheet of the wafer on the wafer table on which the layer of the liquid has been formed, and fixing the wafer to the wafer table through the adhesive sheet, a detecting step of imaging the wafer with an imaging unit which is positioned opposite to the supporting face of the wafer table to thereby detect the division lines formed on the front side of the wafer, and a processing step of processing a portion on a back side of the wafer corresponding to each of the division lines.

公开(公告)号：US10668569B2

公开(公告)日：2020-06-02

申请号：US15148495

申请日：2016-05-06

Applicant: DISCO CORPORATION

Inventor： Kentaro Odanaka ,  Hironari Ohkubo ,  Zentaro Kawasaki

IPC: B23K26/364 ,  B23K26/03 ,  B23K26/06 ,  B23K26/08 ,  B23K101/40

Abstract: Disclosed herein is a laser processing apparatus including a controller. The controller includes a target pattern detecting section performing matching between patterns formed in each device imaged and a key pattern to thereby detect a target pattern included in each device, a spacing detecting section detecting the spacing in a Y direction between the target pattern and an ablation groove formed along each division line by ablation, and a map creating section creating a map showing the spacing in the Y direction between each target pattern and the ablation groove for the plural devices arranged along the ablation groove.

公开(公告)号：US20170140989A1

公开(公告)日：2017-05-18

申请号：US15348071

申请日：2016-11-10

Applicant: DISCO CORPORATION

Inventor： Tomotaka Tabuchi ,  Kentaro Odanaka ,  Satoshi Kumazawa ,  Senichi Ryo ,  Yuki Ogawa

IPC: H01L21/78 ,  B05D3/06 ,  B05D1/00 ,  H01L21/268 ,  H01L21/306

CPC classification number: H01L21/78 ,  B05D1/005 ,  B05D3/06 ,  H01L21/268 ,  H01L21/30604 ,  H01L21/67092

Abstract: A method for dividing a wafer having a wiring layer including Cu on the front side, the front side of the wafer being partitioned by a plurality of crossing division lines to define a plurality of separate regions where a plurality of devices are formed. The method includes a laser processed groove forming step of applying a laser beam to the wiring layer along each division line to thereby remove the wiring layer along each division line and form a laser processed groove along each division line, a cutting step of using a cutting blade having a thickness smaller than the width of each laser processed groove to fully cut the wafer along each laser processed groove after performing the laser processed groove forming step, and a dry etching step of dry-etching at least each laser processed groove after performing the laser processed groove forming step.

公开(公告)号：US12191216B2

公开(公告)日：2025-01-07

申请号：US17405330

申请日：2021-08-18

Applicant: DISCO CORPORATION

Inventor： Kentaro Odanaka

IPC: H01L21/66 ,  B23K26/00 ,  B23K26/02 ,  B23K26/08 ,  G05D3/20 ,  H01L21/78 ,  B23K101/40 ,  G01K13/00

Abstract: A laser processing apparatus includes a laser beam applying mechanism for applying a laser beam to a workpiece held by a holding mechanism while keeping a converged spot of the laser beam in the workpiece, and a temperature detector for detecting a temperature of the holding mechanism or a temperature of an actuator of a moving mechanism that moves the holding mechanism in a processing feed direction. The laser beam applying mechanism has a converged spot position adjusting unit. The controller, depending on a temperature change detected by the temperature detector, controls the converged spot position adjusting unit to establish a position of the converged spot of the laser beam in a thicknesswise direction of the workpiece.

公开(公告)号：US10784166B2

公开(公告)日：2020-09-22

申请号：US16533222

申请日：2019-08-06

Applicant: DISCO CORPORATION

Inventor： Meiyu Piao ,  Kentaro Odanaka ,  Masatoshi Wakahara ,  Wakana Onoe ,  Heidi Lan

IPC: H01L21/78 ,  H01L21/67 ,  H01J37/32

Abstract: A wafer processing method includes the following steps: forming, on a back side of a wafer including a device layer, a mask to be used in forming grooves in a substrate along streets from the back side of the wafer; applying plasma etching from the back side of the wafer through the mask to form the grooves in the substrate along the streets; ejecting high-pressure fluid against the back side of the wafer with the wafer mounted at its front side on a mounting surface to press the wafer at regions surrounded by the etched grooves; and bonding a tape to the front side of the wafer before performance of at least the pressing step.

公开(公告)号：US20170186656A1

公开(公告)日：2017-06-29

申请号：US15388168

申请日：2016-12-22

Applicant: DISCO CORPORATION

Inventor： Taku Iwamoto ,  Hironari Ohkubo ,  Junichi Kuki ,  Kentaro Odanaka

IPC: H01L21/66 ,  H01L23/544 ,  H01L21/67 ,  H01S3/16 ,  H01L21/683 ,  H01L21/68 ,  H01S3/11 ,  H01L21/268 ,  H01L21/687

CPC classification number: H01L22/20 ,  H01L21/268 ,  H01L21/67092 ,  H01L21/67259 ,  H01L21/67282 ,  H01L21/681 ,  H01L21/6838 ,  H01L21/68764 ,  H01L21/78 ,  H01L22/32 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01S3/11 ,  H01S3/163

Abstract: Disclosed herein is a wafer processing method including a processed position measuring step of imaging an area including a beam plasma generated by applying a pulsed laser beam to a wafer, by using an imaging unit during the formation of a laser processed groove on the wafer, and next measuring the positional relation between the position of the beam plasma and a preset processing position. Accordingly, it is possible to check whether or not the laser processed groove is formed at a desired position, in real time during laser processing. If the position of the laser processed groove is deviated, the processed position can be immediately corrected.

公开(公告)号：US20160266037A1

公开(公告)日：2016-09-15

申请号：US15066688

申请日：2016-03-10

Applicant: DISCO CORPORATION

Inventor： Senichi Ryo ,  Yusaku Ito ,  Tomoaki Endo ,  Yukinobu Ohura ,  Kentaro Odanaka

IPC: G01N21/55 ,  G01N21/84 ,  H01L21/66

CPC classification number: G01N21/55 ,  G01N21/3563 ,  G01N21/8422 ,  G01N2021/8427 ,  G01N2021/8433 ,  H01L22/12

Abstract: A method detects whether or not a workpiece is coated with a water-soluble protective film. The method includes a preparatory step before detection and a detecting step. The preparatory step includes irradiating with infrared light a first region coated with the water-soluble protective film and a second region not coated with the water-soluble protective film for a reference, receiving the reflected light, and thereby acquiring an intensity of reflection from the first region and an intensity of reflection from the second region; and a threshold determining step of determining a threshold from the intensity of reflection from the first region and the intensity of reflection from the second region at a wavenumber of 3000 cm−1 to 3600 cm−1. The detecting step includes irradiating a surface of the workpiece with the infrared light, receiving the reflected light, and comparing the thus obtained intensity of reflection with the threshold.

Abstract translation: 一种方法检测工件是否涂有水溶性保护膜。 该方法包括检测前的准备步骤和检测步骤。 准备步骤包括用红外光照射涂覆有水溶性保护膜的第一区域和未涂覆有水溶性保护膜的第二区域作为参考，接收反射光，从而从其中获得反射强度 第一区域和第二区域的反射强度; 以及阈值确定步骤，用于根据来自第一区域的反射强度和来自波数为3000cm -1至3600cm -1的第二区域的反射强度确定阈值。 检测步骤包括用红外光照射工件的表面，接收反射光，并将由此获得的反射强度与阈值进行比较。

公开(公告)号：US20140206177A1

公开(公告)日：2014-07-24

申请号：US14151071

申请日：2014-01-09

Applicant: Disco Corporation

Inventor： Yuki Ogawa ,  Nobuyasu Kitahara ,  Kentaro Odanaka ,  Yukinobu Ohura

IPC: H01L21/78

CPC classification number: H01L21/78 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50

Abstract: A wafer processing method divides a wafer into individual devices along crossing streets formed on the front side of the wafer. The wafer has a substrate and a functional layer formed on the substrate, the individual devices being formed from the functional layer and partitioned by the streets. In a functional layer dividing step, a laser beam is applied along both sides of each street to form two parallel grooves. Each groove reaches the substrate, thereby dividing the functional layer. In a division groove forming step, a division groove is formed in the functional layer and the substrate along each street so that the division groove extends between the two grooves. The wavelength of the laser beam in the functional layer dividing step is 300 nm or less, at an absorption wavelength of a passivation film.

Abstract translation: 晶片处理方法将晶片分成沿晶片前侧形成的交叉街道的各个器件。 晶片具有形成在基板上的基板和功能层，各个装置由功能层形成并被街道分隔开。 在功能层分割步骤中，沿着每条街道的两侧施加激光束以形成两个平行的凹槽。 每个沟槽到达衬底，从而划分功能层。 在分割槽形成工序中，沿着每个街道在功能层和基板上形成分割槽，使得分割槽在两个槽之间延伸。 在钝化膜的吸收波长下，功能层分割工序中的激光束的波长为300nm以下。

公开(公告)号：US20220301918A1

公开(公告)日：2022-09-22

申请号：US17836618

申请日：2022-06-09

Applicant: DISCO CORPORATION

Inventor： Yukiyasu Masuda ,  Kentaro Odanaka

IPC: H01L21/683 ,  H01L21/67

Abstract: A workpiece processing method for processing a workpiece using a processing apparatus including a chuck table, a processing unit, a moving mechanism for moving the chuck table and the processing unit relative to each other, and an imaging unit for imaging the workpiece, where the chuck table includes a holding member formed by a transparent body and a supporting member supporting a part of the holding member and connected to an angle control mechanism. The method includes a tape affixing step, a holding step of holding the workpiece by the chuck table via the tape, and an identifying step of imaging the top surface side of the workpiece through the transparent holding member by the imaging unit positioned in a region that is on a lower side of the holding member and is not superimposed on the supporting member, and identifying a region to be processed in the workpiece.

公开(公告)号：US10991623B2

公开(公告)日：2021-04-27

申请号：US16709452

申请日：2019-12-10

Applicant: DISCO CORPORATION

Inventor： Masatoshi Wakahara ,  Karl Heinz Priewasser ,  Meiya Piao ,  Kentaro Odanaka ,  Wakana Onoe ,  Heidi Lan

IPC: H01L21/78 ,  H01L21/308 ,  H01L21/3065 ,  H01L21/683 ,  B23K26/364

Abstract: A wafer processing method for processing a wafer having a substrate and a device layer formed on a front side of the substrate includes forming a mask on a back side of the wafer, so as to form an etched groove along each street through a thickness of the substrate from the back side of the wafer, performing plasma etching from the back side of the wafer through the mask to the substrate after forming the mask, thereby forming the etched groove in the substrate along each street so that the etched groove has a depth equal to the thickness of the substrate, and applying a laser beam to the device layer along each street from the front side of the wafer before etching and mask forming, thereby forming a device layer dividing groove corresponding to the etched groove along each street.