Abstract:
In a first aspect, an apparatus adapted to clean a semiconductor device manufacturing component is provided. The apparatus includes an ozone module adapted to (1) obtain Ozone; (2) combine the Ozone with a fluid to generate ozonated fluid; and (3) deliver the ozonated fluid to the semiconductor device manufacturing component so as to clean the semiconductor device manufacturing component. Numerous other aspects are provided.
Abstract:
A polishing layer of a polishing has a window member with a top surface positioned a predetermined distance below the polishing surface. A transparent layer can be positioned below the polishing layer and supporting the window member.
Abstract:
A device for achieving vacuum conditions more quickly in a semiconductor processing system having a vacuum pump, a gate valve and a chamber includes a rigid body containing heating elements that contact the surface of the gate valve. The device may include a U-shaped retainer clip for holding the device to the gate valve. A method for heating a gate valve to drive off contaminants involves heating the lower portion of the gate valve to drive contaminants towards the vacuum pump.
Abstract:
A polishing layer of a polishing has a window member with a top surface positioned a predetermined distance below the polishing surface. A transparent layer can be positioned below the polishing layer and supporting the window member.
Abstract:
A semiconductor fabrication equipment component which is exposed to a film layer fabrication environment exhibits a surface which is embossed with a pattern to provide an enhanced surface area for particle retention. The component is fabricatable using numerous embossing techniques, including knurling. The embossed surface provides the enhanced surface area without imposing a particle load on the treated part.
Abstract:
A two part retaining ring is described that has a lower ring and an upper ring. The lower ring contacts a polishing surface during chemical mechanical polishing. The upper surface and the lower surface of the lower ring have thick and thin subportions to increase the flexibility of the lower ring.
Abstract:
A two part retaining ring is described that has a lower ring and an upper ring. The lower ring contacts a polishing surface during chemical mechanical polishing. The upper surface and the lower surface of the lower ring have matching grooves formed therein to increase the flexibility of the lower ring.
Abstract:
Apparatus, positioned at an inlet port to a pump, for shielding the pump from a process chamber of a semiconductor wafer processing system, where the apparatus has a controllably variable effective throughput area, and method for electrically controlling the size of the effective throughput area. Specifically, the apparatus is a controllable restrictor shield supported by an actuator, having a first effective throughput area and a second effective throughput area, where the first effective throughput area is typically less than the second effective throughput area. The size of the effective throughput area is directly responsive to an electric signal that controls the actuator.
Abstract:
A device for achieving vacuum conditions more quickly in a semiconductor processing system having a vacuum pump, a gate valve and a chamber includes a rigid body containing heating elements that contact the surface of the gate valve. The device may include a U-shaped retainer clip for holding the device to the gate valve. A method for heating a gate valve to drive off contaminants involves heating the lower portion of the gate valve to drive contaminants towards the vacuum pump.
Abstract:
Apparatus, positioned at an inlet port to a pump, for shielding the pump from a process chamber of a semiconductor wafer processing system, where the apparatus has a variable effective throughput area. Specifically, the apparatus is a restrictor shield having a first effective throughput area during processing and a second effective throughput area during bakeout, where the first effective throughput area is typically less than the second effective throughput area. The selection of the effective throughput area is directly responsive to the temperature within the process chamber.