公开(公告)号：US20180119888A1

公开(公告)日：2018-05-03

申请号：US15573020

申请日：2016-05-11

Applicant: ENTEGRIS, INC.

Inventor： Daneil ELZER ,  Ying TANG ,  Barry Lewis CHAMBERS ,  Joseph D. SWEENEY ,  Shaun M. WILSON ,  Steven ULANECKI ,  Steven E. BISHOP ,  James V. MCMANUS ,  Karl W. OLANDER ,  Edward E. JONES ,  Oleg BYL ,  Joseph R. DESPRES ,  Christopher SCANNELL

IPC: F17C13/04

CPC classification number: F17C13/04 ,  F17C11/00 ,  F17C2201/0114 ,  F17C2201/0119 ,  F17C2201/058 ,  F17C2203/0617 ,  F17C2205/0308 ,  F17C2205/0329 ,  F17C2205/0335 ,  F17C2205/0338 ,  F17C2205/0385 ,  F17C2205/0391

Abstract: Fluid dispensing assemblies are disclosed, for use in fluid supply packages in which such fluid dispensing assemblies as coupled to fluid supply vessels, for dispensing of fluids such as semiconductor manufacturing fluids. The fluid dispensing assemblies in specific implementations are configured to prevent application of excessive force to valve elements in the fluid dispensing assemblies, and/or for avoiding inadvertent or accidental open conditions of vessels that may result in leakage of toxic or otherwise hazardous or valuable gas. Also described are alignment devices for assisting coupling of coupling elements, e.g., coupling elements of fluid supply packages of the foregoing type, so that damage to such couplings as a result of misalignment is avoided.

公开(公告)号：US20210020402A1

公开(公告)日：2021-01-21

申请号：US16904286

申请日：2020-06-17

Applicant: ENTEGRIS, INC.

Inventor： Ying TANG ,  Sharad N. YEDAVE ,  Joseph R. DESPRES ,  Joseph D. SWEENEY ,  Oleg BYL

IPC: H01J37/317 ,  H01J37/08

Abstract: A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

公开(公告)号：US20190189402A1

公开(公告)日：2019-06-20

申请号：US16192416

申请日：2018-11-15

Applicant: ENTEGRIS, INC.

Inventor： Sharad N. YEDAVE ,  Ying TANG ,  Joseph R. DESPRES ,  Joseph D. SWEENEY

IPC: H01J37/32 ,  H01J37/317 ,  H01J37/08

CPC classification number: H01J37/32449 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/004 ,  H01J2237/31701

Abstract: A gas supply assembly is described for delivery of gas to a plasma flood gun which includes an inert gas and a fluorine-containing gas, wherein the assembly is configured to deliver a volume of the fluorine-containing gas to the flood gun that is not greater than 10% of a total volume of the fluorine-containing and inert gasses. The fluorine-containing gas can generate volatile reaction product gases from material deposits in the plasma flood gun, and to effect re-metallization of a plasma generation filament in the plasma flood gun. In combination with the gas amounts, the assembly and methods can use gas flow rates to optimize the cleaning effect and reduce filament material loss from the plasma flood gun during use.

公开(公告)号：US20210398773A1

公开(公告)日：2021-12-23

申请号：US17466362

申请日：2021-09-03

Applicant: Entegris, Inc.

Inventor： Ying TANG ,  Sharad N. YEDAVE ,  Joseph R. DESPRES ,  Joseph D. SWEENEY ,  Oleg BYL

IPC: H01J37/317 ,  H01J37/08

Abstract: A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

公开(公告)号：US20210090860A1

公开(公告)日：2021-03-25

申请号：US17024261

申请日：2020-09-17

Applicant: ENTEGRIS, INC.

Inventor： Ying TANG ,  Bryan C. HENDRIX ,  Oleg BYL ,  Sharad N. YEDAVE

IPC: H01J37/32

Abstract: Described are plasma immersion ion implantation methods that use multiple precursor gases, particularly for the purpose of controlling an amount of a specific atomic dopant species that becomes implanted into a workpiece relative to other atomic species that also become implanted into the workpiece during the implantation process.

公开(公告)号：US20200248873A1

公开(公告)日：2020-08-06

申请号：US16855684

申请日：2020-04-22

Applicant: ENTEGRIS, INC.

Inventor： Daniel ELZER ,  Ying TANG ,  Barry L. CHAMBERS ,  Joseph D. SWEENEY ,  Shaun M. WILSON ,  Steven E. BISHOP ,  Steven ULANECKI ,  James V. MCMANUS ,  Oleg BYL ,  Christopher SCANNELL ,  Edward E. JONES ,  Joseph R. DESPRES

IPC: F17C13/04 ,  F17C11/00

Abstract: Fluid dispensing assemblies are disclosed, for use in fluid supply packages in which such fluid dispensing assemblies as coupled to fluid supply vessels, for dispensing of fluids such as semiconductor manufacturing fluids. The fluid dispensing assemblies in specific implementations are configured to prevent application of excessive force to valve elements in the fluid dispensing assemblies, and/or for avoiding inadvertent or accidental open conditions of vessels that may result in leakage of toxic or otherwise hazardous or valuable gas. Also described are alignment devices for assisting coupling of coupling elements, e.g., coupling elements of fluid supply packages of the foregoing type, so that damage to such couplings as a result of misalignment is avoided.

公开(公告)号：US20200083015A1

公开(公告)日：2020-03-12

申请号：US16564965

申请日：2019-09-09

Applicant: ENTEGRIS, INC.

Inventor： Joseph D. SWEENEY ,  Joseph R. DESPRES ,  Ying TANG ,  Sharad N. YEDAVE ,  Edward E. JONES ,  Oleg BYL

IPC: H01J37/08 ,  H01J37/317

Abstract: An ion source apparatus for ion implantation is described, including an ion source chamber, and a consumable structure in or associated with the ion source chamber, in which the consumable structure includes a solid dopant source material susceptible to reaction with a reactive gas for release of dopant in gaseous form to the ion source chamber, wherein the solid dopant source material comprises gallium nitride, gallium oxide, either of which may be isotopically enriched with respect to a gallium isotope, or combinations thereof.

公开(公告)号：US20170338130A1

公开(公告)日：2017-11-23

申请号：US15522499

申请日：2015-10-29

Applicant: ENTEGRIS, INC.

Inventor： Karl W. OLANDER ,  Ying TANG ,  Barry Lewis CHAMBERS ,  Steven E. BISHOP

IPC: H01L21/67 ,  H01L21/66 ,  C23C14/48 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01L21/67017 ,  C23C14/48 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/1825 ,  H01J2237/31701 ,  H01L21/26513 ,  H01L21/67253 ,  H01L22/20

Abstract: An ion implantation system is described, including: an ion implanter comprising a housing defining an enclosed volume in which is positioned a gas box configured to hold one or more gas supply vessels, the gas box being in restricted gas flow communication with gas in the enclosed volume that is outside the gas box; a first ventilation assembly configured to flow ventilation gas through the housing and to exhaust the ventilation gas from the housing to an ambient environment of the ion implanter; a second ventilation assembly configured to exhaust gas from the gas box to a treatment apparatus that is adapted to at least partially remove contaminants from the gas box exhaust gas, or that is adapted to dilute the gas box exhaust gas, to produce a treated effluent gas, the second ventilation assembly comprising a variable flow control device for modulating flow rate of the gas box exhaust gas between a relatively lower gas box exhaust gas flow rate and a relatively higher gas box exhaust gas flow rate, and a motive fluid driver adapted to flow the gas box exhaust gas through the variable flow control device to the treatment apparatus; and a monitoring and control assembly configured to monitor operation of the ion implanter for occurrence of a gas hazard event, and thereupon to responsively prevent gas-dispensing operation of the one or more gas supply vessels, and to modulate the variable flow control device to the relatively higher gas box exhaust gas flow rate so that the motive fluid driver flows the gas box exhaust gas to the treatment apparatus at the relatively higher gas box exhaust gas flow rate. Preferably, in a gas hazard event, the shell exhaust discharge from the housing is also terminated, to facilitate exhausting all gas within the housing, outside as well as inside the gas box, to the treatment unit.

公开(公告)号：US20220108863A1

公开(公告)日：2022-04-07

申请号：US17492089

申请日：2021-10-01

Applicant: Entegris, Inc.

Inventor： Ying TANG ,  Joe R. DESPRES ,  Joseph D. SWEENEY ,  Oleg BYL ,  Barry Lewis CHAMBERS

IPC: H01J37/08 ,  H01J37/32

Abstract: Described are ion implantation devices, systems, and methods, and in particular to an ion source that is useful for generating an aluminum ion beam.

公开(公告)号：US20210189550A1

公开(公告)日：2021-06-24

申请号：US17055885

申请日：2019-03-15

Applicant: ENTEGRIS, INC.

Inventor： Oleg BYL ,  Ying TANG ,  Joseph R. DESPRES ,  Joseph SWEENEY ,  Sharad N. YEDAVE

IPC: C23C14/48 ,  H01J37/317 ,  C23C14/56 ,  H01J37/08

Abstract: The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF4) and hydrogen (H2) gases to an ion implantation apparatus, so H2 is present in an amount in the range of 25%-67% (volume) N of the gas mixture, or the GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67. The use of the H2 gas in an amount in mixture or relative to the GeF4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge+ current gain and W+ peak reduction during an ion implantation procedure.