公开(公告)号：US20230315959A1

公开(公告)日：2023-10-05

申请号：US18089883

申请日：2022-12-28

Applicant: MITSUBISHI HEAVY INDUSTRIES, LTD. ,  FLOSFIA INC.

Inventor： Masato ITO ,  Masaya MITAKE ,  Kengo TAKEUCHI ,  Toshimi HITORA ,  Fujio OKUI

IPC: G06F30/3308

CPC classification number: G06F30/3308 ,  G06F2119/08

Abstract: Provided a design support apparatus of supporting design of a component embedded substrate including one or more embedded electronic components that configure at least a part of a circuit, including, a component information acquiring unit that acquires component information about the electronic components to be incorporated in the component embedded substrate; and a required minimum area calculating unit that calculates a required minimum area of a surface of the component embedded substrate on the basis of at least information about a size of each electronic component contained in the component information.

公开(公告)号：US20220393037A1

公开(公告)日：2022-12-08

申请号：US17834129

申请日：2022-06-07

Applicant: FLOSFIA INC.

Inventor： Mitsuru OKIGAWA ,  Fujio OKUI ,  Yasushi HIGUCHI ,  Koji AMAZUTSUMI ,  Hidetaka SHIBATA ,  Yuji KATO ,  Atsushi TERAI

IPC: H01L29/872 ,  H01L29/24

Abstract: Provided is a semiconductor device in which a leakage current is reduced, the semiconductor device which is particularly useful for power devices. A semiconductor device including at least: an n+-type semiconductor layer, which contains a crystalline oxide semiconductor as a major component; an n−-type semiconductor layer that is placed on the n+-type semiconductor layer, the n−-type semiconductor layer containing a crystalline oxide semiconductor as a major component; a high-resistance layer with at least a part thereof being embedded in the n−-type semiconductor layer, a depth d (μm) of the part embedded in the n−-type semiconductor layer satisfying d≥1.4; and a Schottky electrode that forms a Schottky junction with the n−-type semiconductor layer, the Schottky electrode having an edge located on the high-resistance layer.

公开(公告)号：US20220393015A1

公开(公告)日：2022-12-08

申请号：US17834089

申请日：2022-06-07

Applicant: FLOSFIA INC.

Inventor： Mitsuru OKIGAWA ,  Fujio OKUI ,  Yasushi HIGUCHI ,  Koji AMAZUTSUMI ,  Hidetaka SHIBATA ,  Yuji KATO ,  Atsushi TERAI

IPC: H01L29/47 ,  H01L29/06

Abstract: Provided is a semiconductor device in which a leakage current is reduced, the semiconductor device which is particularly useful for power devices. A semiconductor device including at least: an n+-type semiconductor layer, which contains a crystalline oxide semiconductor as a major component; an n−-type semiconductor layer that is placed on the n+-type semiconductor layer, the n−-type semiconductor layer containing a crystalline oxide semiconductor as a major component; a high-resistance layer with at least a part thereof being embedded in the n−-type semiconductor layer, the high-resistance layer having a bottom surface located at a distance of less than 1.5 μm from an upper surface of the n+-type semiconductor layer; and a Schottky electrode that forms a Schottky junction with the n−-type semiconductor layer, the Schottky electrode having an edge located on the high-resistance layer.