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公开(公告)号：US20240307914A1
公开(公告)日：2024-09-19
申请号：US18603922
申请日：2024-03-13
Applicant: FLOSFIA INC.
Inventor： Makoto SHIMIZU , Hiroshi SHIHO , Hiroyuki ANDO , Naoyuki TSUKAMOTO , Yuji KATO
CPC classification number: B05D1/60 , B05D1/005 , C09D4/00 , B05D2203/30
Abstract: The present disclosure provides a film formation method having an excellent mass productivity.
The present disclosure provides a film formation method using one aqueous solution or different aqueous solutions containing at least one of a metal complex having two or more different ligands and a metal complex having same ligands and substituents as well as a gallium compound, in which the metal complex having the two or more different ligands has nitrogen atom, and the metal complex having the same ligands and substituents has a halogen atom.-
公开(公告)号：US20220310798A1
公开(公告)日：2022-09-29
申请号：US17840120
申请日：2022-06-14
Applicant: FLOSFIA INC.
Inventor： Ryohei KANNO , Osamu IMAFUJI , Kazuyoshi NORIMATSU , Yuji KATO
IPC: H01L29/24 , H01L29/872
Abstract: An electrically-conductive metal oxide film that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. An electrically-conductive metal oxide film comprising: a metal oxide as a major component, wherein the metal oxide includes at least a first metal selected from a metal of Group 4 of the periodic table and a second metal selected from a metal of Group 13 of the periodic table. The electrically-conductive metal oxide film is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.
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公开(公告)号：US20240309556A1
公开(公告)日：2024-09-19
申请号：US18603541
申请日：2024-03-13
Applicant: FLOSFIA INC.
Inventor： Makoto SHIMIZU , Hiroshi SHIHO , Hiroyuki ANDO , Naoyuki TSUKAMOTO , Yuji KATO
Abstract: The present disclosure provides a film formation method having an excellent mass productivity.
In the film formation method, at least one of a metal complex having two or more different ligands, and a metal complex having same ligands and substituents is used.-
公开(公告)号：US20240307913A1
公开(公告)日：2024-09-19
申请号：US18603868
申请日：2024-03-13
Applicant: FLOSFIA INC.
Inventor： Makoto Shimizu , Hiroshi SHIHO , Hiroyuki ANDO , Naoyuki TSUKAMOTO , Yuji KATO
CPC classification number: B05D1/60 , B05D1/005 , C09D4/00 , B05D2203/30
Abstract: The present disclosure provides a film formation method having an excellent mass productivity.
In the film formation method, a metal complex is used, which shows an exothermic peak at 480°° C. to 520°° C. in a thermogravimetric-differential thermal analysis at a temperature increase rate of 20° C./min under an oxygen-containing atmosphere.-
公开(公告)号：US20230019414A1
公开(公告)日：2023-01-19
申请号：US17951512
申请日：2022-09-23
Applicant: FLOSFIA INC.
Inventor： Ryohei KANNO , Osamu IMAFUJI , Kazuyoshi NORIMATSU , Yuji KATO
IPC: H01L29/45 , H01L29/24 , H01L29/66 , H01L23/367 , H01L29/872
Abstract: A crystal that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. A crystal, including: a corundum structured crystalline oxide, the crystalline oxide including gallium and/or indium, and the crystalline oxide further including a metal of Group 4 of the periodic table. The crystal is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.
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Patent Agency Ranking
公开(公告)号：US20210217869A1
公开(公告)日：2021-07-15
申请号：US17145651
申请日：2021-01-11
Applicant: FLOSFIA INC.
Inventor： Ryohei KANNO , Osamu IMAFUJI , Kazuyoshi NORIMATSU , Yuji KATO
IPC: H01L29/45 , H01L29/24 , H01L29/872 , H01L29/66 , H01L23/367
Abstract: A crystal that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. A crystal, including: a corundum structured crystalline oxide, the crystalline oxide including gallium and/or indium, and the crystalline oxide further including a metal of Group 4 of the periodic table. The crystal is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.
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公开(公告)号：US20210217854A1
公开(公告)日：2021-07-15
申请号：US17145700
申请日：2021-01-11
Applicant: FLOSFIA INC.
Inventor： Ryohei KANNO , Osamu IMAFUJI , Kazuyoshi NORIMATSU , Yuji KATO
Abstract: The semiconductor element and the semiconductor device according to the disclosure is excellent in electrical characteristics are provided. A semiconductor element, including: an electrode, and the electrode having a corundum structure. The semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.
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公开(公告)号：US20240312854A1
公开(公告)日：2024-09-19
申请号：US18603969
申请日：2024-03-13
Applicant: FLOSFIA INC.
Inventor： Hiroyuki ANDO , Naoyuki TSUKAMOTO , Yuji KATO
CPC classification number: H01L23/291 , H01L23/298 , H01L23/3178 , H01L23/50
Abstract: The present disclosure provides a laminated structure suitable for semiconductor elements.
The laminated structure includes a first oxide layer having a trench structure on its surface and a second oxide layer laminated along the trench structure. A difference in thickness between centers of a bottom and a sidewall of the second oxide layer is less than 30%.-
公开(公告)号：US20220393015A1
公开(公告)日：2022-12-08
申请号：US17834089
申请日：2022-06-07
Applicant: FLOSFIA INC.
Inventor： Mitsuru OKIGAWA , Fujio OKUI , Yasushi HIGUCHI , Koji AMAZUTSUMI , Hidetaka SHIBATA , Yuji KATO , Atsushi TERAI
Abstract: Provided is a semiconductor device in which a leakage current is reduced, the semiconductor device which is particularly useful for power devices. A semiconductor device including at least: an n+-type semiconductor layer, which contains a crystalline oxide semiconductor as a major component; an n−-type semiconductor layer that is placed on the n+-type semiconductor layer, the n−-type semiconductor layer containing a crystalline oxide semiconductor as a major component; a high-resistance layer with at least a part thereof being embedded in the n−-type semiconductor layer, the high-resistance layer having a bottom surface located at a distance of less than 1.5 μm from an upper surface of the n+-type semiconductor layer; and a Schottky electrode that forms a Schottky junction with the n−-type semiconductor layer, the Schottky electrode having an edge located on the high-resistance layer.
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公开(公告)号：US20220393037A1
公开(公告)日：2022-12-08
申请号：US17834129
申请日：2022-06-07
Applicant: FLOSFIA INC.
Inventor： Mitsuru OKIGAWA , Fujio OKUI , Yasushi HIGUCHI , Koji AMAZUTSUMI , Hidetaka SHIBATA , Yuji KATO , Atsushi TERAI
IPC: H01L29/872 , H01L29/24
Abstract: Provided is a semiconductor device in which a leakage current is reduced, the semiconductor device which is particularly useful for power devices. A semiconductor device including at least: an n+-type semiconductor layer, which contains a crystalline oxide semiconductor as a major component; an n−-type semiconductor layer that is placed on the n+-type semiconductor layer, the n−-type semiconductor layer containing a crystalline oxide semiconductor as a major component; a high-resistance layer with at least a part thereof being embedded in the n−-type semiconductor layer, a depth d (μm) of the part embedded in the n−-type semiconductor layer satisfying d≥1.4; and a Schottky electrode that forms a Schottky junction with the n−-type semiconductor layer, the Schottky electrode having an edge located on the high-resistance layer.
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