公开(公告)号：US20240363695A1

公开(公告)日：2024-10-31

申请号：US18771277

申请日：2024-07-12

Applicant: Flosfia Inc.

Inventor： Takashi SHINOHE ,  Mitsuru OKIGAWA ,  Koji AMAZUTSUMI ,  Yasushi HIGUCHI ,  Tokiyoshi MATSUDA

IPC: H01L29/24 ,  H01L29/739 ,  H01L29/778 ,  H01L29/868 ,  H01L29/872

CPC classification number: H01L29/24 ,  H01L29/7395 ,  H01L29/7786 ,  H01L29/868 ,  H01L29/872

Abstract: Provided is a semiconductor device including at least: an n type oxide semiconductor layer; a first p type oxide semiconductor layer that forms a main junction with the n type oxide semiconductor layer, and a hole supply layer, wherein the hole supply layer includes a second p type oxide semiconductor layer that is different from the first p type oxide semiconductor layer.

公开(公告)号：US20210242363A1

公开(公告)日：2021-08-05

申请号：US17163826

申请日：2021-02-01

Applicant: FLOSFIA INC.

Inventor： Mitsuru OKIGAWA ,  Manabu KIGUCHI ,  Koji AMAZUTSUMI

IPC: H01L31/173 ,  H01L31/032 ,  H01L31/113

Abstract: A semiconductor element and/or semiconductor device having enhanced semiconductor characteristics useful as power devices are provided. A semiconductor element, including: a first electrode; a second electrode; an n−-type semiconductor layer; and a low electrically conductive layer, the low electrically conductive layer that is arranged between the first electrode and the n−-type semiconductor layer, a first barrier height of the first electrode is larger than a second barrier height of the second electrode, a first electrical resistivity of the low electrically conductive layer is equal to or more than 1000 times as large as a second electrical resistivity of the n−-type semiconductor layer, and the semiconductor element that is configured to be able to irradiate light from an outside to at least a part of the low electrically conductive layer.

公开(公告)号：US20220393015A1

公开(公告)日：2022-12-08

申请号：US17834089

申请日：2022-06-07

Applicant: FLOSFIA INC.

Inventor： Mitsuru OKIGAWA ,  Fujio OKUI ,  Yasushi HIGUCHI ,  Koji AMAZUTSUMI ,  Hidetaka SHIBATA ,  Yuji KATO ,  Atsushi TERAI

IPC: H01L29/47 ,  H01L29/06

Abstract: Provided is a semiconductor device in which a leakage current is reduced, the semiconductor device which is particularly useful for power devices. A semiconductor device including at least: an n+-type semiconductor layer, which contains a crystalline oxide semiconductor as a major component; an n−-type semiconductor layer that is placed on the n+-type semiconductor layer, the n−-type semiconductor layer containing a crystalline oxide semiconductor as a major component; a high-resistance layer with at least a part thereof being embedded in the n−-type semiconductor layer, the high-resistance layer having a bottom surface located at a distance of less than 1.5 μm from an upper surface of the n+-type semiconductor layer; and a Schottky electrode that forms a Schottky junction with the n−-type semiconductor layer, the Schottky electrode having an edge located on the high-resistance layer.

公开(公告)号：US20210151568A1

公开(公告)日：2021-05-20

申请号：US17096128

申请日：2020-11-12

Applicant: FLOSFIA INC.

Inventor： Koji AMAZUTSUMI ,  Kazuyoshi NORIMATSU ,  Mitsuru OKIGAWA

IPC: H01L29/24 ,  H01L29/04 ,  H01L29/872

Abstract: In a first aspect of a present inventive subject matter, a semiconductor device includes a crystalline oxide semiconductor layer; and at least one electrode electrically connected to the crystalline oxide semiconductor layer. The crystalline oxide semiconductor layer includes at least one trench in the crystalline oxide semiconductor layer at a side of a first surface of the crystalline oxide semiconductor layer. The trench includes a bottom, a side, and at least one arc portion with a radius of curvature that is in a range of 100 nm to 500 nm, and the at least one arc portion is positioned between the bottom and the side, and an angle between the side of the trench and the first surface of the crystalline oxide semiconductor layer is 90° or more.

公开(公告)号：US20220393037A1

公开(公告)日：2022-12-08

申请号：US17834129

申请日：2022-06-07

Applicant: FLOSFIA INC.

Inventor： Mitsuru OKIGAWA ,  Fujio OKUI ,  Yasushi HIGUCHI ,  Koji AMAZUTSUMI ,  Hidetaka SHIBATA ,  Yuji KATO ,  Atsushi TERAI

IPC: H01L29/872 ,  H01L29/24

Abstract: Provided is a semiconductor device in which a leakage current is reduced, the semiconductor device which is particularly useful for power devices. A semiconductor device including at least: an n+-type semiconductor layer, which contains a crystalline oxide semiconductor as a major component; an n−-type semiconductor layer that is placed on the n+-type semiconductor layer, the n−-type semiconductor layer containing a crystalline oxide semiconductor as a major component; a high-resistance layer with at least a part thereof being embedded in the n−-type semiconductor layer, a depth d (μm) of the part embedded in the n−-type semiconductor layer satisfying d≥1.4; and a Schottky electrode that forms a Schottky junction with the n−-type semiconductor layer, the Schottky electrode having an edge located on the high-resistance layer.

公开(公告)号：US20210320179A1

公开(公告)日：2021-10-14

申请号：US17259622

申请日：2019-07-10

Applicant: FLOSFIA INC.

Inventor： Masahiro SUGIMOTO ,  Isao TAKAHASHI ,  Takashi SHINOHE ,  Koji AMAZUTSUMI

IPC: H01L29/417 ,  H01L29/872 ,  H01L29/24

Abstract: A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; one or more p-type semiconductors; an electrode, the one or more p-type semiconductors that are provided between the n-type semiconductor layer and the electrode, and at least a part of the one or more p-type semiconductors is protruded in the electrode.

公开(公告)号：US20210320176A1

公开(公告)日：2021-10-14

申请号：US17259637

申请日：2019-07-10

Applicant: FLOSFIA INC.

Inventor： Masahiro SUGIMOTO ,  Isao TAKAHASHI ,  Takashi SHINOHE ,  Koji AMAZUTSUMI

IPC: H01L29/24 ,  H01L29/872 ,  H01L29/04

Abstract: A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; an electrode; two or more p-type semiconductors that is provided between the n-type semiconductor layer and the electrode, the n-type semiconductor layer containing gallium, a number of the two or more p-type semiconductors that is equal to or more than three, and the two or more p-type semiconductors that are embedded in the n-type semiconductor layer.

公开(公告)号：US20210296511A1

公开(公告)日：2021-09-23

申请号：US17259630

申请日：2019-07-10

Applicant: FLOSFIA INC.

Inventor： Masahiro SUGIMOTO ,  Isao TAKAHASHI ,  Takashi SHINOHE ,  Koji AMAZUTSUMI

IPC: H01L29/872 ,  H01L21/02 ,  H01L29/66 ,  H01L29/24 ,  H02M3/335 ,  C23C16/40

Abstract: A semiconductor device with enhanced semiconductor characteristics that is useful for power devices. A semiconductor device, including: an n-type semiconductor layer; an electrode; two or more p-type semiconductors provided between the n-type semiconductor layer and the electrode, the n-type semiconductor layer containing a corundum-structured crystallin oxide semiconductor as a major component, a number of the two or more p-type semiconductor that is equal to or more than three, and the two or more p-type semiconductors that are embedded in the n-type semiconductor layer.