公开(公告)号：US20170179249A1

公开(公告)日：2017-06-22

申请号：US15381894

申请日：2016-12-16

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Rie Tokuda ,  Hitoshi Kambara ,  Katsuaki Kawara ,  Toshimi Hitora

IPC: H01L29/47 ,  H01L29/41

CPC classification number: H01L29/47 ,  H01L21/02414 ,  H01L21/0242 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02628 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41 ,  H01L29/43 ,  H01L29/66969 ,  H01L29/872

Abstract: A semiconductor device is provided that is excellent in semiconductor properties and Schottky characteristics. A semiconductor device includes: a semiconductor layer containing a crystalline oxide semiconductor with a corundum structure as a major component; and a Schottky electrode on the semiconductor layer, wherein the Schottky electrode is formed by containing a metal of Groups 4-9 of the periodic table, thereby manufacturing a semiconductor device excellent in semiconductor properties and Schottky characteristics without impairing the semiconductor properties to use the semiconductor device thus obtained for a power device and the like.

公开(公告)号：US11450774B2

公开(公告)日：2022-09-20

申请号：US16628341

申请日：2018-07-06

Applicant: FLOSFIA INC.

Inventor： Masahiro Sugimoto ,  Isao Takahashi ,  Hitoshi Kambara ,  Takashi Shinohe ,  Toshimi Hitora

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/47

Abstract: A semiconductor device with an enhanced semiconductor characteristics that is useful for power devices. A semiconductor device including: a semiconductor region; a barrier electrode arranged on the semiconductor region; and two or more adjustment regions of barrier height that are on a surface of the semiconductor region and arranged between the semiconductor region and the barrier electrode, the adjustment regions are configured such that barrier height at an interface between the adjustment regions and the barrier electrode is higher than barrier height at an interface between the semiconductor region and the barrier electrode.

公开(公告)号：US20190043961A1

公开(公告)日：2019-02-07

申请号：US16159540

申请日：2018-10-12

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Rie Tokuda ,  Hitoshi Kambara ,  Katsuaki Kawara ,  Toshimi Hitora

IPC: H01L29/47 ,  H01L29/43 ,  H01L29/24 ,  H01L29/04 ,  H01L29/872 ,  H01L29/66 ,  H01L29/41 ,  H01L21/02

Abstract: A semiconductor device is provided that is excellent in semiconductor properties and Schottky characteristics. A semiconductor device includes: a semiconductor layer containing a crystalline oxide semiconductor with a corundum structure as a major component; and a Schottky electrode on the semiconductor layer, wherein the Schottky electrode is formed by containing a metal of Groups 4-9 of the periodic table, thereby manufacturing a semiconductor device excellent in semiconductor properties and Schottky characteristics without impairing the semiconductor properties to use the semiconductor device thus obtained for a power device and the like.

公开(公告)号：US10128349B2

公开(公告)日：2018-11-13

申请号：US15381894

申请日：2016-12-16

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Rie Tokuda ,  Hitoshi Kambara ,  Katsuaki Kawara ,  Toshimi Hitora

IPC: H01L29/43 ,  H01L29/47 ,  H01L29/66 ,  H01L29/872 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41 ,  H01L21/02

Abstract: A semiconductor device is provided that is excellent in semiconductor properties and Schottky characteristics. A semiconductor device includes: a semiconductor layer containing a crystalline oxide semiconductor with a corundum structure as a major component; and a Schottky electrode on the semiconductor layer, wherein the Schottky electrode is formed by containing a metal of Groups 4-9 of the periodic table, thereby manufacturing a semiconductor device excellent in semiconductor properties and Schottky characteristics without impairing the semiconductor properties to use the semiconductor device thus obtained for a power device and the like.