公开(公告)号：US20170179249A1

公开(公告)日：2017-06-22

申请号：US15381894

申请日：2016-12-16

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Rie Tokuda ,  Hitoshi Kambara ,  Katsuaki Kawara ,  Toshimi Hitora

IPC: H01L29/47 ,  H01L29/41

CPC classification number: H01L29/47 ,  H01L21/02414 ,  H01L21/0242 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02628 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41 ,  H01L29/43 ,  H01L29/66969 ,  H01L29/872

Abstract: A semiconductor device is provided that is excellent in semiconductor properties and Schottky characteristics. A semiconductor device includes: a semiconductor layer containing a crystalline oxide semiconductor with a corundum structure as a major component; and a Schottky electrode on the semiconductor layer, wherein the Schottky electrode is formed by containing a metal of Groups 4-9 of the periodic table, thereby manufacturing a semiconductor device excellent in semiconductor properties and Schottky characteristics without impairing the semiconductor properties to use the semiconductor device thus obtained for a power device and the like.

公开(公告)号：US20190043961A1

公开(公告)日：2019-02-07

申请号：US16159540

申请日：2018-10-12

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Rie Tokuda ,  Hitoshi Kambara ,  Katsuaki Kawara ,  Toshimi Hitora

IPC: H01L29/47 ,  H01L29/43 ,  H01L29/24 ,  H01L29/04 ,  H01L29/872 ,  H01L29/66 ,  H01L29/41 ,  H01L21/02

Abstract: A semiconductor device is provided that is excellent in semiconductor properties and Schottky characteristics. A semiconductor device includes: a semiconductor layer containing a crystalline oxide semiconductor with a corundum structure as a major component; and a Schottky electrode on the semiconductor layer, wherein the Schottky electrode is formed by containing a metal of Groups 4-9 of the periodic table, thereby manufacturing a semiconductor device excellent in semiconductor properties and Schottky characteristics without impairing the semiconductor properties to use the semiconductor device thus obtained for a power device and the like.

公开(公告)号：US10128349B2

公开(公告)日：2018-11-13

申请号：US15381894

申请日：2016-12-16

Applicant: FLOSFIA INC.

Inventor： Masaya Oda ,  Rie Tokuda ,  Hitoshi Kambara ,  Katsuaki Kawara ,  Toshimi Hitora

IPC: H01L29/43 ,  H01L29/47 ,  H01L29/66 ,  H01L29/872 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41 ,  H01L21/02

Abstract: A semiconductor device is provided that is excellent in semiconductor properties and Schottky characteristics. A semiconductor device includes: a semiconductor layer containing a crystalline oxide semiconductor with a corundum structure as a major component; and a Schottky electrode on the semiconductor layer, wherein the Schottky electrode is formed by containing a metal of Groups 4-9 of the periodic table, thereby manufacturing a semiconductor device excellent in semiconductor properties and Schottky characteristics without impairing the semiconductor properties to use the semiconductor device thus obtained for a power device and the like.

公开(公告)号：US11967618B2

公开(公告)日：2024-04-23

申请号：US17832984

申请日：2022-06-06

Applicant: FLOSFIA INC.

Inventor： Isao Takahashi ,  Takashi Shinohe ,  Rie Tokuda ,  Masaya Oda ,  Toshimi Hitora

IPC: H01L29/22 ,  C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02 ,  H01L29/04 ,  H01L29/12 ,  H01L29/227 ,  H01L29/24 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872

CPC classification number: H01L29/227 ,  C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02433 ,  H01L29/045 ,  H01L29/12 ,  H01L29/24 ,  H01L29/739 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/812 ,  H01L29/872

Abstract: A crystalline oxide semiconductor film with an enhanced electrical property is provided. By use of a mist CVD apparatus, a crystalline oxide semiconductor film with a corundum structure and a principal plane that is an a-plane or an m-plane was obtained on a crystalline substrate by atomizing a raw-material solution containing a dopant that is an n-type dopant to obtain atomized droplets, carrying the atomized droplets by carrier gas onto the crystalline substrate that is an a-plane corundum-structured crystalline substrate or an m-plane corundum-structured crystalline substrate placed in a film-formation chamber, and the atomized droplets were thermally reacted to form the crystalline oxide semiconductor film on the crystalline substrate.

公开(公告)号：US10804362B2

公开(公告)日：2020-10-13

申请号：US15689547

申请日：2017-08-29

Applicant: FLOSFIA INC.

Inventor： Rie Tokuda ,  Masaya Oda ,  Toshimi Hitora

IPC: H01L29/24 ,  H01L21/02 ,  H01L29/808 ,  H01L33/42 ,  H01L29/66 ,  H01L29/778 ,  H01L29/739 ,  H01L29/78 ,  H01L29/04 ,  H01L29/872 ,  H01L33/32

Abstract: In a first aspect of a present inventive subject matter, a crystalline oxide semiconductor film includes a crystalline oxide semiconductor that contains a corundum structure as a major component, a dopant, and an electron mobility that is 30 cm2/Vs or more.