公开(公告)号：US20220285557A1

公开(公告)日：2022-09-08

申请号：US17826516

申请日：2022-05-27

Applicant: FLOSFIA INC.

Inventor： Masahiro SUGIMOTO ,  Yasushi HIGUCHI

IPC: H01L29/786

Abstract: A semiconductor device including at least a crystalline oxide semiconductor layer, which has a band gap of 3 eV or more and a field-effect mobility of 30 cm2/V·s or higher.

公开(公告)号：US20200211919A1

公开(公告)日：2020-07-02

申请号：US16724516

申请日：2019-12-23

Applicant: FLOSFIA INC. ,  DENSO CORPORATION

Inventor： Isao TAKAHASHI ,  Tatsuya TORIYAMA ,  Masahiro SUGIMOTO ,  Takashi SHINOHE ,  Hideyuki UEHIGASH ,  Junji OHARA ,  Fusao HIROSE ,  Hideo MATSUKI

IPC: H01L23/373

Abstract: A crystalline oxide film with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide film including a first crystal axis, a second crystal axis; a metal oxide as a major component that includes gallium, a first side; and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.

公开(公告)号：US20240055510A1

公开(公告)日：2024-02-15

申请号：US18384121

申请日：2023-10-26

Applicant: FLOSFIA INC.

Inventor： Masahiro SUGIMOTO ,  Shinpei MATSUDA ,  Yasushi HIGUCHI ,  Kazuyoshi NORIMATSU

IPC: H01L29/78 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7802 ,  H01L29/24 ,  H01L21/02565 ,  H01L21/0262 ,  H01L29/66969 ,  H02P27/06

Abstract: Provided a semiconductor device includes at least: a crystalline oxide semiconductor layer including a channel layer, a drift layer, and a source region; a gate electrode arranged over the channel layer across a gate insulating film; a current blocking region arranged between the channel layer and the drift layer; and a source electrode provided on the source region. The current blocking region is composed of a high-resistance layer. The source electrode forms a contact with the current blocking region.

公开(公告)号：US20220293740A1

公开(公告)日：2022-09-15

申请号：US17826435

申请日：2022-05-27

Applicant: FLOSFIA INC.

Inventor： Masahiro SUGIMOTO ,  Yasushi HIGUCHI

IPC: H01L29/24 ,  H01L29/786

Abstract: Provided is a semiconductor device comprising at least, a high-resistance oxide film, which is placed in a direction in which a current flows, the high-resistance oxide film having a resistance of 1.0×106 Ω·cm or higher. A semiconductor device comprising at least, a gate electrode; a source electrode; a drain electrode; and a high-resistance oxide film, which is placed between the source electrode and the drain electrode and has a resistance of 1.0×106 Ω·cm or higher. A semiconductor device comprising at least, a gate electrode; a source electrode; a drain electrode; a high-resistance oxide film; and a substrate with the high-resistance oxide film being placed between the source electrode or/and the drain electrode and the substrate and having a resistance of 1.0×106 Ω·cm or higher.

公开(公告)号：US20220285543A1

公开(公告)日：2022-09-08

申请号：US17826724

申请日：2022-05-27

Applicant: FLOSFIA INC.

Inventor： Masahiro SUGIMOTO ,  Yasushi HIGUCHI

IPC: H01L29/78 ,  H01L29/43 ,  H01L29/786

Abstract: There is provided a semiconductor device comprising at least, a crystalline oxide semiconductor layer which has a band gap of 4.5 eV or more; and a field-effect mobility of 10 cm2V·s or higher.

公开(公告)号：US20210013311A1

公开(公告)日：2021-01-14

申请号：US16635259

申请日：2019-07-11

Applicant: FLOSFIA INC.

Inventor： Masahiro SUGIMOTO ,  Isao TAKAHASHI ,  Takashi SHINOHE

IPC: H01L29/24 ,  H01L29/04 ,  H01L29/78

Abstract: A semiconductor device including at least an inversion channel region includes an oxide semiconductor film containing a crystal that contains at least gallium oxide at the inversion channel region.

公开(公告)号：US20200212184A1

公开(公告)日：2020-07-02

申请号：US16724494

申请日：2019-12-23

Applicant: FLOSFIA INC. ,  DENSO CORPORATION

Inventor： Isao TAKAHASHI ,  Tatsuya TORIYAMA ,  Masahiro SUGIMOTO ,  Takashi SHINOHE ,  Hideyuki UEHIGASHI ,  Junji OHARA ,  Fusao HIROSE ,  Hideo MATSUKI

IPC: H01L29/24 ,  H01L29/04 ,  H01L23/367 ,  H01L29/872 ,  H01L29/778 ,  H01L29/78 ,  H01L29/808 ,  H01L29/739 ,  H01L33/26 ,  H01L21/02 ,  C23C16/448

Abstract: A crystalline oxide semiconductor with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide semiconductor including a first crystal axis, a second crystal axis, a first side, and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.

公开(公告)号：US20230290832A1

公开(公告)日：2023-09-14

申请号：US18133246

申请日：2023-04-11

Applicant: FLOSFIA INC. ,  DENSO CORPORATION

Inventor： Yasushi HIGUCHI ,  Masahiro SUGIMOTO ,  Takashi SHINOHE ,  Isao TAKAHASHI ,  Hideo MATSUKI ,  Fusao HIROSE

IPC: H01L29/12 ,  H01L29/06

CPC classification number: H01L29/12 ,  H01L29/06 ,  H01L29/7802

Abstract: Provided is a semiconductor device, including: a gate electrode having at least a part buried in a semiconductor layer; a deep p layer having at least a part buried in the semiconductor layer to a same depth as a buried lower end portion of the gate electrode or a position deeper than the buried lower end portion; and a channel layer, wherein: the deep p layer is formed by a crystalline oxide semiconductor; and a carrier concentration of the deep p layer is higher than a carrier concentration of the channel layer.

公开(公告)号：US20210328062A1

公开(公告)日：2021-10-21

申请号：US17258852

申请日：2019-07-11

Applicant: FLOSFIA INC.

Inventor： Masahiro SUGIMOTO ,  Isao TAKAHASHI ,  Takashi SHINOHE

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L29/10

Abstract: A semiconductor device including at least one inversion channel region includes an oxide semiconductor film containing a crystal that has a corundum structure at the inversion channel region.

公开(公告)号：US20210328026A1

公开(公告)日：2021-10-21

申请号：US17258875

申请日：2019-07-11

Applicant: FLOSFIA INC.

Inventor： Masahiro SUGIMOTO ,  Isao TAKAHASHI ,  Takashi SHINOHE

IPC: H01L29/24 ,  H01L29/786

Abstract: A layered structure includes an oxide semiconductor film containing as a major component gallium oxide or a mixed crystal thereof, and an oxide film containing at least one element selected from elements of Group 15 in the periodic table and arranged on the oxide semiconductor film.