公开(公告)号：US20240055510A1

公开(公告)日：2024-02-15

申请号：US18384121

申请日：2023-10-26

Applicant: FLOSFIA INC.

Inventor： Masahiro SUGIMOTO ,  Shinpei MATSUDA ,  Yasushi HIGUCHI ,  Kazuyoshi NORIMATSU

IPC: H01L29/78 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/7802 ,  H01L29/24 ,  H01L21/02565 ,  H01L21/0262 ,  H01L29/66969 ,  H02P27/06

Abstract: Provided a semiconductor device includes at least: a crystalline oxide semiconductor layer including a channel layer, a drift layer, and a source region; a gate electrode arranged over the channel layer across a gate insulating film; a current blocking region arranged between the channel layer and the drift layer; and a source electrode provided on the source region. The current blocking region is composed of a high-resistance layer. The source electrode forms a contact with the current blocking region.

公开(公告)号：US20220310798A1

公开(公告)日：2022-09-29

申请号：US17840120

申请日：2022-06-14

Applicant: FLOSFIA INC.

Inventor： Ryohei KANNO ,  Osamu IMAFUJI ,  Kazuyoshi NORIMATSU ,  Yuji KATO

IPC: H01L29/24 ,  H01L29/872

Abstract: An electrically-conductive metal oxide film that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. An electrically-conductive metal oxide film comprising: a metal oxide as a major component, wherein the metal oxide includes at least a first metal selected from a metal of Group 4 of the periodic table and a second metal selected from a metal of Group 13 of the periodic table. The electrically-conductive metal oxide film is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.

公开(公告)号：US20240055471A1

公开(公告)日：2024-02-15

申请号：US18384031

申请日：2023-10-26

Applicant: FLOSFIA INC.

Inventor： Masahiro SUGIMOTO ,  Shinpei MATSUDA ,  Yasushi HIGUCHI ,  Kazuyoshi NORIMATSU

IPC: H01L29/04 ,  H01L29/78 ,  H01L21/02

CPC classification number: H01L29/04 ,  H01L29/7813 ,  H01L21/02565

Abstract: Provided a semiconductor device includes at least: a crystalline oxide semiconductor layer including a channel layer and a drift layer; and a gate electrode arranged over the channel layer across a gate insulating film, and has a current blocking layer between the channel layer and the drift layer. The semiconductor device is characterized in that the drift layer contains a first crystalline oxide as a major component, the current blocking layer contains a second crystalline oxide as a major component, and the first crystalline oxide and the second crystalline oxide have different compositions.

公开(公告)号：US20240021669A1

公开(公告)日：2024-01-18

申请号：US17862906

申请日：2022-07-12

Applicant: FLOSFIA INC.

Inventor： Isao TAKAHASHI ,  Kazuyoshi NORIMATSU ,  Takashi SHINOHE

IPC: H01L29/04 ,  H01L23/473 ,  H01L29/24

CPC classification number: H01L29/045 ,  H01L23/473 ,  H01L29/24 ,  H01L29/872

Abstract: Provided is a semiconductor device including: at least a semiconductor layer having a corundum structure, the semiconductor layer including a first surface having at least a first side and a second side shorter than the first side, the first surface being a c-plane or an m-plane, a direction of the first side being a direction of a c-axis or a direction of an m-axis.

公开(公告)号：US20210151568A1

公开(公告)日：2021-05-20

申请号：US17096128

申请日：2020-11-12

Applicant: FLOSFIA INC.

Inventor： Koji AMAZUTSUMI ,  Kazuyoshi NORIMATSU ,  Mitsuru OKIGAWA

IPC: H01L29/24 ,  H01L29/04 ,  H01L29/872

Abstract: In a first aspect of a present inventive subject matter, a semiconductor device includes a crystalline oxide semiconductor layer; and at least one electrode electrically connected to the crystalline oxide semiconductor layer. The crystalline oxide semiconductor layer includes at least one trench in the crystalline oxide semiconductor layer at a side of a first surface of the crystalline oxide semiconductor layer. The trench includes a bottom, a side, and at least one arc portion with a radius of curvature that is in a range of 100 nm to 500 nm, and the at least one arc portion is positioned between the bottom and the side, and an angle between the side of the trench and the first surface of the crystalline oxide semiconductor layer is 90° or more.

公开(公告)号：US20230019414A1

公开(公告)日：2023-01-19

申请号：US17951512

申请日：2022-09-23

Applicant: FLOSFIA INC.

Inventor： Ryohei KANNO ,  Osamu IMAFUJI ,  Kazuyoshi NORIMATSU ,  Yuji KATO

IPC: H01L29/45 ,  H01L29/24 ,  H01L29/66 ,  H01L23/367 ,  H01L29/872

Abstract: A crystal that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. A crystal, including: a corundum structured crystalline oxide, the crystalline oxide including gallium and/or indium, and the crystalline oxide further including a metal of Group 4 of the periodic table. The crystal is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.

公开(公告)号：US20220344477A1

公开(公告)日：2022-10-27

申请号：US17860670

申请日：2022-07-08

Applicant: FLOSFIA INC.

Inventor： Isao TAKAHASHI ,  Kazuyoshi NORIMATSU ,  Takashi SHINOHE

IPC: H01L29/24 ,  H01L29/10 ,  H01L23/46 ,  H01L29/04

Abstract: Provided is a semiconductor device including; at least a semiconductor layer; and a gate electrode that is arranged directly or via another layer on the semiconductor layer, the semiconductor device being configured in such a manner as to cause a current to flow in the semiconductor layer at least in a first direction that is along with an interface between the semiconductor layer and the gate electrode, the semiconductor layer having a corundum structure, a direction of a c-axis in the semiconductor layer being the first direction.

公开(公告)号：US20210217869A1

公开(公告)日：2021-07-15

申请号：US17145651

申请日：2021-01-11

Applicant: FLOSFIA INC.

Inventor： Ryohei KANNO ,  Osamu IMAFUJI ,  Kazuyoshi NORIMATSU ,  Yuji KATO

IPC: H01L29/45 ,  H01L29/24 ,  H01L29/872 ,  H01L29/66 ,  H01L23/367

Abstract: A crystal that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. A crystal, including: a corundum structured crystalline oxide, the crystalline oxide including gallium and/or indium, and the crystalline oxide further including a metal of Group 4 of the periodic table. The crystal is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.

公开(公告)号：US20210217854A1

公开(公告)日：2021-07-15

申请号：US17145700

申请日：2021-01-11

Applicant: FLOSFIA INC.

Inventor： Ryohei KANNO ,  Osamu IMAFUJI ,  Kazuyoshi NORIMATSU ,  Yuji KATO

IPC: H01L29/24 ,  H01L29/45

Abstract: The semiconductor element and the semiconductor device according to the disclosure is excellent in electrical characteristics are provided. A semiconductor element, including: an electrode, and the electrode having a corundum structure. The semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.