公开(公告)号：US20220140083A1

公开(公告)日：2022-05-05

申请号：US17573790

申请日：2022-01-12

Applicant: FLOSFIA INC.

Inventor： Ryohei KANNO

IPC: H01L29/12 ,  C23C16/40 ,  H01L29/778 ,  H01L29/812 ,  H01L29/808 ,  H01L29/872 ,  H01L33/26 ,  H01L29/739

Abstract: A first raw material solution containing at least aluminum is atomized to generate first atomized droplets and a second raw material solution containing at least gallium and a dopant is atomized to generate second atomized droplets, and subsequently, the first atomized droplets are carried into a film forming chamber using a first carrier gas and the second atomized droplets are carried into the film forming chamber using a second carrier gas, and then the first atomized droplets and the second atomized droplets are mixed in the film forming chamber, and the mixed atomized droplets are thermally reacted in the vicinity of a surface of the base to form an oxide semiconductor film on the base, the oxide semiconductor film including, as a major component, a metal oxide containing at least aluminum and gallium, wherein the oxide semiconductor film has a mobility of no less than 5 cm2/Vs.

公开(公告)号：US20220310798A1

公开(公告)日：2022-09-29

申请号：US17840120

申请日：2022-06-14

Applicant: FLOSFIA INC.

Inventor： Ryohei KANNO ,  Osamu IMAFUJI ,  Kazuyoshi NORIMATSU ,  Yuji KATO

IPC: H01L29/24 ,  H01L29/872

Abstract: An electrically-conductive metal oxide film that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. An electrically-conductive metal oxide film comprising: a metal oxide as a major component, wherein the metal oxide includes at least a first metal selected from a metal of Group 4 of the periodic table and a second metal selected from a metal of Group 13 of the periodic table. The electrically-conductive metal oxide film is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.

公开(公告)号：US20220140084A1

公开(公告)日：2022-05-05

申请号：US17573844

申请日：2022-01-12

Applicant: FLOSFIA INC.

Inventor： Ryohei KANNO

IPC: H01L29/12 ,  C23C16/40 ,  H01L29/778 ,  H01L29/812 ,  H01L29/808 ,  H01L29/872 ,  H01L33/26 ,  H01L29/739

Abstract: A first raw material solution containing at least aluminum is atomized to generate first atomized droplets and a second raw material solution containing at least gallium and a dopant is atomized to generate second atomized droplets, and subsequently, the first atomized droplets are carried into a film forming chamber using a first carrier gas and the second atomized droplets are carried into the film forming chamber using a second carrier gas, and then the first atomized droplets and the second atomized droplets are mixed in the film forming chamber, and the mixed atomized droplets are thermally reacted in the vicinity of a surface of the base to form an oxide film on the base, the oxide film including, as a major component, a metal oxide containing at least aluminum and gallium, the oxide film having a corundum structure, wherein a principal surface of the oxide film is an m-plane.

公开(公告)号：US20230019414A1

公开(公告)日：2023-01-19

申请号：US17951512

申请日：2022-09-23

Applicant: FLOSFIA INC.

Inventor： Ryohei KANNO ,  Osamu IMAFUJI ,  Kazuyoshi NORIMATSU ,  Yuji KATO

IPC: H01L29/45 ,  H01L29/24 ,  H01L29/66 ,  H01L23/367 ,  H01L29/872

Abstract: A crystal that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. A crystal, including: a corundum structured crystalline oxide, the crystalline oxide including gallium and/or indium, and the crystalline oxide further including a metal of Group 4 of the periodic table. The crystal is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.

公开(公告)号：US20210217869A1

公开(公告)日：2021-07-15

申请号：US17145651

申请日：2021-01-11

Applicant: FLOSFIA INC.

Inventor： Ryohei KANNO ,  Osamu IMAFUJI ,  Kazuyoshi NORIMATSU ,  Yuji KATO

IPC: H01L29/45 ,  H01L29/24 ,  H01L29/872 ,  H01L29/66 ,  H01L23/367

Abstract: A crystal that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. A crystal, including: a corundum structured crystalline oxide, the crystalline oxide including gallium and/or indium, and the crystalline oxide further including a metal of Group 4 of the periodic table. The crystal is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.

公开(公告)号：US20210217854A1

公开(公告)日：2021-07-15

申请号：US17145700

申请日：2021-01-11

Applicant: FLOSFIA INC.

Inventor： Ryohei KANNO ,  Osamu IMAFUJI ,  Kazuyoshi NORIMATSU ,  Yuji KATO

IPC: H01L29/24 ,  H01L29/45

Abstract: The semiconductor element and the semiconductor device according to the disclosure is excellent in electrical characteristics are provided. A semiconductor element, including: an electrode, and the electrode having a corundum structure. The semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.