公开(公告)号：US20220310798A1

公开(公告)日：2022-09-29

申请号：US17840120

申请日：2022-06-14

Applicant: FLOSFIA INC.

Inventor： Ryohei KANNO ,  Osamu IMAFUJI ,  Kazuyoshi NORIMATSU ,  Yuji KATO

IPC: H01L29/24 ,  H01L29/872

Abstract: An electrically-conductive metal oxide film that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. An electrically-conductive metal oxide film comprising: a metal oxide as a major component, wherein the metal oxide includes at least a first metal selected from a metal of Group 4 of the periodic table and a second metal selected from a metal of Group 13 of the periodic table. The electrically-conductive metal oxide film is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.

公开(公告)号：US20220158000A1

公开(公告)日：2022-05-19

申请号：US17575857

申请日：2022-01-14

Applicant: FLOSFIA INC.

Inventor： Mitsuru OKIGAWA ,  Yasushi HIGUCHI ,  Yusuke MATSUBARA ,  Osamu IMAFUJI ,  Takashi SHINOHE

IPC: H01L29/872 ,  H01L29/24 ,  H01L29/04 ,  H01L29/47 ,  H01L29/417

Abstract: Provided is a semiconductor device in which crystal defects due to stress concentration in a semiconductor layer caused by an insulator film are prevented, the semiconductor device that is particularly useful for power devices. A semiconductor device including at least: a semiconductor layer; a Schottky electrode; and an insulator layer provided between a part of the semiconductor layer and the Schottky electrode, wherein the semiconductor layer contains a crystalline oxide semiconductor, and wherein the insulator layer has a taper angle of 10° or less.

公开(公告)号：US20220231174A1

公开(公告)日：2022-07-21

申请号：US17711342

申请日：2022-04-01

Applicant: FLOSFIA INC.

Inventor： Osamu IMAFUJI

IPC: H01L29/872 ,  H01L29/66 ,  H01L29/47

Abstract: Provided is a semiconductor element including at least a multilayer structure including a semiconductor layer, a first metal layer, a second metal layer and a third metal layer, the semiconductor layer including an oxide semiconductor film, the first metal layer, the second metal layer and the third metal layer being arranged on the semiconductor layer, the first metal layer, the second metal layer and the third metal layer respectively including one or two or more different metals, the first metal layer being in ohmic contact with the semiconductor layer, the second metal layer being disposed between the first metal layer and the third metal layer, and the second metal layer containing Pt or/and Pd.

公开(公告)号：US20220376056A1

公开(公告)日：2022-11-24

申请号：US17882193

申请日：2022-08-05

Applicant: FLOSFIA INC.

Inventor： Yusuke MATSUBARA ,  Osamu IMAFUJI ,  Hiroyuki ANDO ,  Hideki TAKEHARA ,  Takashi SHINOHE ,  Mitsuru OKIGAWA

IPC: H01L29/24 ,  H01L29/872 ,  H01L29/47 ,  H01L29/739 ,  H01L29/786 ,  H01L23/13

Abstract: Provided is a semiconductor element including: a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide, as a major component, containing gallium, the conductive substrate having a larger area than the oxide semiconductor film.

公开(公告)号：US20220223682A1

公开(公告)日：2022-07-14

申请号：US17711565

申请日：2022-04-01

Applicant: FLOSFIA INC.

Inventor： Osamu IMAFUJI ,  Yusuke MATSUBARA

IPC: H01L29/06 ,  H01L29/04 ,  H01L29/24 ,  H01L29/786

Abstract: Provided is a semiconductor element including; a semiconductor film; and a porous layer disposed on a first surface side of the semiconductor film or a second surface side opposite from the first surface side, a porosity of the porous layer being no more than 10%.

公开(公告)号：US20220140145A1

公开(公告)日：2022-05-05

申请号：US17575838

申请日：2022-01-14

Applicant: FLOSFIA INC.

Inventor： Mitsuru OKIGAWA ,  Yasushi HIGUCHI ,  Yusuke MATSUBARA ,  Osamu IMAFUJI ,  Takashi SHINOHE

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/47 ,  H01L29/24 ,  H01L29/872 ,  H01L29/04 ,  H01L29/78

Abstract: Provided are a multilayer structure in which crystal defects due to stress concentration in a semiconductor layer caused by an insulator film are prevented and a semiconductor device using the multilayer structure, the multilayer structure and the semiconductor device that are particularly useful for power devices. A multilayer structure in which an insulator film is arranged on a part of a semiconductor film, wherein the semiconductor film has a corundum structure and contains a crystalline oxide semiconductor containing one or two or more metals selected from groups 9 and 13 of the periodic table, and wherein the insulator film has a taper angle of 20° or less.

公开(公告)号：US20230019414A1

公开(公告)日：2023-01-19

申请号：US17951512

申请日：2022-09-23

Applicant: FLOSFIA INC.

Inventor： Ryohei KANNO ,  Osamu IMAFUJI ,  Kazuyoshi NORIMATSU ,  Yuji KATO

IPC: H01L29/45 ,  H01L29/24 ,  H01L29/66 ,  H01L23/367 ,  H01L29/872

Abstract: A crystal that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. A crystal, including: a corundum structured crystalline oxide, the crystalline oxide including gallium and/or indium, and the crystalline oxide further including a metal of Group 4 of the periodic table. The crystal is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.

公开(公告)号：US20220384663A1

公开(公告)日：2022-12-01

申请号：US17882148

申请日：2022-08-05

Applicant: FLOSFIA INC.

Inventor： Yusuke MATSUBARA ,  Osamu IMAFUJI ,  Hiroyuki ANDO ,  Hideki TAKEHARA ,  Takashi SHINOHE ,  Mitsuru OKIGAWA

IPC: H01L29/872 ,  H01L29/24

Abstract: Provided is a semiconductor element including: a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide, as a major component, having a corundum structure, the conductive substrate having a larger area than the oxide semiconductor film.

公开(公告)号：US20210217869A1

公开(公告)日：2021-07-15

申请号：US17145651

申请日：2021-01-11

Applicant: FLOSFIA INC.

Inventor： Ryohei KANNO ,  Osamu IMAFUJI ,  Kazuyoshi NORIMATSU ,  Yuji KATO

IPC: H01L29/45 ,  H01L29/24 ,  H01L29/872 ,  H01L29/66 ,  H01L23/367

Abstract: A crystal that is useful for semiconductor element and a semiconductor element that has enhanced electrical properties are provided. A crystal, including: a corundum structured crystalline oxide, the crystalline oxide including gallium and/or indium, and the crystalline oxide further including a metal of Group 4 of the periodic table. The crystal is used to make a semiconductor element, and the obtained semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.

公开(公告)号：US20210217854A1

公开(公告)日：2021-07-15

申请号：US17145700

申请日：2021-01-11

Applicant: FLOSFIA INC.

Inventor： Ryohei KANNO ,  Osamu IMAFUJI ,  Kazuyoshi NORIMATSU ,  Yuji KATO

IPC: H01L29/24 ,  H01L29/45

Abstract: The semiconductor element and the semiconductor device according to the disclosure is excellent in electrical characteristics are provided. A semiconductor element, including: an electrode, and the electrode having a corundum structure. The semiconductor element is used to make a semiconductor device such as a power card. Also, the semiconductor element and the semiconductor device are used to make a semiconductor system.