公开(公告)号：US20230290888A1

公开(公告)日：2023-09-14

申请号：US18106095

申请日：2023-02-06

Applicant: FLOSFIA INC.

Inventor： Hideaki YANAGIDA ,  Shogo MIZUMOTO ,  Hiroyuki ANDO ,  Yusuke MATSUBARA

IPC: H01L29/872 ,  H01L29/808 ,  H01L29/24 ,  H01L29/47 ,  H01L29/04

CPC classification number: H01L29/872 ,  H01L29/808 ,  H01L29/24 ,  H01L29/47 ,  H01L29/04

Abstract: Provided is a semiconductor element including at least, a semiconductor layer including a crystalline oxide semiconductor as a major component; an electrode layer laminated on the semiconductor layer; and a conductive substrate laminated on the electrode layer directly or with another layer in between, the conductive substrate containing at least a first metal selected from the metals in group 11 in the periodic table and a second metal different from the first metal in coefficient of liner thermal expansion.

公开(公告)号：US20220406711A1

公开(公告)日：2022-12-22

申请号：US17894662

申请日：2022-08-24

Applicant: FLOSFIA INC.

Inventor： Shogo MIZUMOTO ,  Hideaki YANAGIDA

IPC: H01L23/525 ,  H01L23/522 ,  H01L23/34

Abstract: Provided is a semiconductor device, including: a first electrode layer including a first wiring member and a second electrode layer including a second wiring member, the first electrode layer and the second electrode layer being disposed to face each other; a semiconductor element disposed in a gap between the first and second electrode layers, and electrically connected to the first and second electrode layers; and a via disposed in the gap between the first and second electrode layers, electrically connected to the first and second electrode layers, and configured to detect a state of the semiconductor element by being fractured at a predetermined temperature and losing electric connection.

公开(公告)号：US20220416651A1

公开(公告)日：2022-12-29

申请号：US17895598

申请日：2022-08-25

Applicant: FLOSFIA INC. ,  MITSUBISHI HEAVY INDUSTRIES, LTD.

Inventor： Masato ITO ,  Masaya MITAKE ,  Yukio YAMASHITA ,  Shogo MIZUMOTO ,  Hideaki YANAGIDA ,  Takashi SHINOHE

IPC: H02M1/36 ,  H02M1/00 ,  H05K1/02 ,  H05K1/18 ,  H02M1/32

Abstract: Provided is a power conversion device converting power and supplying the converted power to a load, the power conversion device including: a power conversion circuit connected to the load and configured to supply/receive the power; a coil configured to detect a current passing through the power conversion circuit and to output a voltage corresponding to the detected current; an integration circuit configured to integrate the voltage output from the coil to generate a voltage signal corresponding to a variation of the current; and a control device configured to generate a control signal to the power conversion circuit based on the voltage signal output from the integration circuit.