公开(公告)号：US20220406711A1

公开(公告)日：2022-12-22

申请号：US17894662

申请日：2022-08-24

Applicant: FLOSFIA INC.

Inventor： Shogo MIZUMOTO ,  Hideaki YANAGIDA

IPC: H01L23/525 ,  H01L23/522 ,  H01L23/34

Abstract: Provided is a semiconductor device, including: a first electrode layer including a first wiring member and a second electrode layer including a second wiring member, the first electrode layer and the second electrode layer being disposed to face each other; a semiconductor element disposed in a gap between the first and second electrode layers, and electrically connected to the first and second electrode layers; and a via disposed in the gap between the first and second electrode layers, electrically connected to the first and second electrode layers, and configured to detect a state of the semiconductor element by being fractured at a predetermined temperature and losing electric connection.

公开(公告)号：US20230290888A1

公开(公告)日：2023-09-14

申请号：US18106095

申请日：2023-02-06

Applicant: FLOSFIA INC.

Inventor： Hideaki YANAGIDA ,  Shogo MIZUMOTO ,  Hiroyuki ANDO ,  Yusuke MATSUBARA

IPC: H01L29/872 ,  H01L29/808 ,  H01L29/24 ,  H01L29/47 ,  H01L29/04

CPC classification number: H01L29/872 ,  H01L29/808 ,  H01L29/24 ,  H01L29/47 ,  H01L29/04

Abstract: Provided is a semiconductor element including at least, a semiconductor layer including a crystalline oxide semiconductor as a major component; an electrode layer laminated on the semiconductor layer; and a conductive substrate laminated on the electrode layer directly or with another layer in between, the conductive substrate containing at least a first metal selected from the metals in group 11 in the periodic table and a second metal different from the first metal in coefficient of liner thermal expansion.

公开(公告)号：US20230207431A1

公开(公告)日：2023-06-29

申请号：US18111221

申请日：2023-02-17

Applicant: FLOSFIA INC.

Inventor： Hideaki YANAGIDA ,  Takashi SHINOHE ,  Hiroyuki ANDO ,  Yusuke MATSUBARA ,  Hidehito KITAKADO

IPC: H01L23/495 ,  H01L29/872 ,  H01L29/868 ,  H01L25/07 ,  H01L25/18

CPC classification number: H01L23/49575 ,  H01L23/49503 ,  H01L23/49562 ,  H01L25/18 ,  H01L25/072 ,  H01L29/868 ,  H01L29/872 ,  H01L24/48 ,  H01L2224/48245

Abstract: Provided is a semiconductor device including, a plurality of PN junction diodes each having a negative temperature characteristic and connected to each other in series; a Schottky barrier diode having a positive temperature characteristic and connected to the PN junction diodes in parallel; and a die pad on which at least one of the PN junction diodes and the Schottky barrier diode are mounted commonly.

公开(公告)号：US20230207541A1

公开(公告)日：2023-06-29

申请号：US18111227

申请日：2023-02-17

Applicant: FLOSFIA INC.

Inventor： Hideaki YANAGIDA ,  Takashi SHINOHE ,  Hiroyuki ANDO ,  Yusuke MATSUBARA ,  Hidehito KITAKADO

IPC: H01L25/16 ,  H01L23/00 ,  H01L23/538 ,  H02P27/06 ,  H02P29/024

CPC classification number: H01L25/16 ,  H01L24/20 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5389 ,  H02P27/06 ,  H02P29/027 ,  H01L2924/10253 ,  H01L2924/1067 ,  H01L2924/12031 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1207 ,  H01L2924/13091

Abstract: Provided is a semiconductor device including, a plurality of PN junction diodes each having a negative temperature characteristic and connected to each other in series; a plurality of resistance elements connected respectively to the PN junction diodes in parallel and connected to each other in series; and a Schottky barrier diode having a positive temperature characteristic and connected to the PN junction diodes in parallel.

公开(公告)号：US20220416651A1

公开(公告)日：2022-12-29

申请号：US17895598

申请日：2022-08-25

Applicant: FLOSFIA INC. ,  MITSUBISHI HEAVY INDUSTRIES, LTD.

Inventor： Masato ITO ,  Masaya MITAKE ,  Yukio YAMASHITA ,  Shogo MIZUMOTO ,  Hideaki YANAGIDA ,  Takashi SHINOHE

IPC: H02M1/36 ,  H02M1/00 ,  H05K1/02 ,  H05K1/18 ,  H02M1/32

Abstract: Provided is a power conversion device converting power and supplying the converted power to a load, the power conversion device including: a power conversion circuit connected to the load and configured to supply/receive the power; a coil configured to detect a current passing through the power conversion circuit and to output a voltage corresponding to the detected current; an integration circuit configured to integrate the voltage output from the coil to generate a voltage signal corresponding to a variation of the current; and a control device configured to generate a control signal to the power conversion circuit based on the voltage signal output from the integration circuit.

公开(公告)号：US20220130952A1

公开(公告)日：2022-04-28

申请号：US17508259

申请日：2021-10-22

Applicant: FLOSFIA INC.

Inventor： Mitsuru OKIGAWA ,  Hideaki YANAGIDA ,  Takashi SHINOHE

IPC: H01L29/06 ,  H01L29/24 ,  H01L29/872 ,  H01L29/78 ,  H01L29/66

Abstract: An object of the disclosure is to provide a semiconductor device having enhanced adhesion of the electrode while improving the reverse direction breakdown voltage, which is especially useful for power devices. A semiconductor device including a semiconductor layer and an electrode layer provided on the semiconductor layer and including at least a first electrode layer and a second electrode layer provided on the first electrode layer, wherein an outer edge portion of the second electrode layer is located outside an outer edge portion of the first electrode layer, wherein the semiconductor layer includes an electric field relaxation region with a different electrical resistivity from that of the semiconductor layer, and wherein the electric field relaxation region overlaps at least a part of a portion of the second electrode layer located outside the outer edge portion of the first electrode layer in plan view.