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公开(公告)号：US20220384663A1
公开(公告)日：2022-12-01
申请号：US17882148
申请日：2022-08-05
Applicant: FLOSFIA INC.
Inventor： Yusuke MATSUBARA , Osamu IMAFUJI , Hiroyuki ANDO , Hideki TAKEHARA , Takashi SHINOHE , Mitsuru OKIGAWA
IPC: H01L29/872 , H01L29/24
Abstract: Provided is a semiconductor element including: a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide, as a major component, having a corundum structure, the conductive substrate having a larger area than the oxide semiconductor film.
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公开(公告)号：US20230290888A1
公开(公告)日：2023-09-14
申请号：US18106095
申请日：2023-02-06
Applicant: FLOSFIA INC.
Inventor： Hideaki YANAGIDA , Shogo MIZUMOTO , Hiroyuki ANDO , Yusuke MATSUBARA
IPC: H01L29/872 , H01L29/808 , H01L29/24 , H01L29/47 , H01L29/04
CPC classification number: H01L29/872 , H01L29/808 , H01L29/24 , H01L29/47 , H01L29/04
Abstract: Provided is a semiconductor element including at least, a semiconductor layer including a crystalline oxide semiconductor as a major component; an electrode layer laminated on the semiconductor layer; and a conductive substrate laminated on the electrode layer directly or with another layer in between, the conductive substrate containing at least a first metal selected from the metals in group 11 in the periodic table and a second metal different from the first metal in coefficient of liner thermal expansion.
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公开(公告)号：US20230261578A1
公开(公告)日：2023-08-17
申请号：US18128512
申请日：2023-03-30
Applicant: FLOSFIA INC.
Inventor： Toshihiro IWAKI , Takuto IGAWA , Hidehito KITAKADO , Yusuke MATSUBARA
CPC classification number: H02M3/1582 , H02M1/143
Abstract: Provided is a power conversion circuit and a control system in which radiated noise of the entire circuit is reduced. A power conversion circuit including at least: a switching element (e.g. a MOSFET, etc.) and a diode (e.g. a commutating diode, etc.): wherein the power conversion circuit is a single-switch power conversion; and the diode is a gallium oxide-based Schottky barrier diode.
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公开(公告)号：US20220158000A1
公开(公告)日：2022-05-19
申请号：US17575857
申请日：2022-01-14
Applicant: FLOSFIA INC.
Inventor： Mitsuru OKIGAWA , Yasushi HIGUCHI , Yusuke MATSUBARA , Osamu IMAFUJI , Takashi SHINOHE
IPC: H01L29/872 , H01L29/24 , H01L29/04 , H01L29/47 , H01L29/417
Abstract: Provided is a semiconductor device in which crystal defects due to stress concentration in a semiconductor layer caused by an insulator film are prevented, the semiconductor device that is particularly useful for power devices. A semiconductor device including at least: a semiconductor layer; a Schottky electrode; and an insulator layer provided between a part of the semiconductor layer and the Schottky electrode, wherein the semiconductor layer contains a crystalline oxide semiconductor, and wherein the insulator layer has a taper angle of 10° or less.
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公开(公告)号：US20230207431A1
公开(公告)日：2023-06-29
申请号：US18111221
申请日：2023-02-17
Applicant: FLOSFIA INC.
Inventor： Hideaki YANAGIDA , Takashi SHINOHE , Hiroyuki ANDO , Yusuke MATSUBARA , Hidehito KITAKADO
IPC: H01L23/495 , H01L29/872 , H01L29/868 , H01L25/07 , H01L25/18
CPC classification number: H01L23/49575 , H01L23/49503 , H01L23/49562 , H01L25/18 , H01L25/072 , H01L29/868 , H01L29/872 , H01L24/48 , H01L2224/48245
Abstract: Provided is a semiconductor device including, a plurality of PN junction diodes each having a negative temperature characteristic and connected to each other in series; a Schottky barrier diode having a positive temperature characteristic and connected to the PN junction diodes in parallel; and a die pad on which at least one of the PN junction diodes and the Schottky barrier diode are mounted commonly.
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Patent Agency Ranking
公开(公告)号：US20230179095A1
公开(公告)日：2023-06-08
申请号：US18094540
申请日：2023-01-09
Applicant: FLOSFIA INC.
Inventor： Hidehito KITAKADO , Yusuke MATSUBARA
CPC classification number: H02M7/219 , H02M1/0051 , H02M1/4225
Abstract: Provided is a power conversion circuit including at least: a switching element that opens and closes an inputted voltage via a reactor; and a commutating diode that passes a current in a direction of an electromotive force by a voltage including at least the electromotive force generated from the reactor when the switching element is turned off, the commutating diode including a gallium oxide-based Schottky barrier diode.
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公开(公告)号：US20220246733A1
公开(公告)日：2022-08-04
申请号：US17613393
申请日：2020-05-22
Applicant: FLOSFIA INC.
Inventor： Mitsuru OKIGAWA , Yasushi HIGUCHI , Yusuke MATSUBARA
IPC: H01L29/40 , H01L29/24 , H01L29/872
Abstract: An object of the disclosure is to provide a semiconductor device with low-loss and suppressed leakage current, which is particularly useful for power devices. A semiconductor device including a semiconductor layer, a dielectric film provided on the semiconductor layer and having an opening and provided over a distance of at least 0.25 μm from the opening, and an electrode layer provided over a part or all of the dielectric film from the inside of the opening, wherein the dielectric film has a thickness of less than 50 nm from the opening to a distance of 0.25 μm, and has relative permittivity of 5 or less.
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公开(公告)号：US20250133794A1
公开(公告)日：2025-04-24
申请号：US19005092
申请日：2024-12-30
Applicant: FLOSFIA INC
Inventor： Yusuke MATSUBARA , Mitsuru Okigawa , Hiroyuki Ando , Takashi Shinohe
Abstract: Provided a semiconductor device including: a semiconductor layer; and an electrode disposed on the semiconductor layer directly or via another layer, the semiconductor layer including a first region containing, as a major component, a crystalline oxide semiconductor containing gallium, and a second region containing, as a major component, an oxide containing gallium, the second region and the first region each containing an impurity element, a maximum value of a concentration of the impurity element in the second region being located at a depth of 1.0 μm or more from an upper surface of the semiconductor layer and being greater than a maximum value of a concentration of the impurity element in the first region.
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公开(公告)号：US20250133757A1
公开(公告)日：2025-04-24
申请号：US19005007
申请日：2024-12-30
Applicant: FLOSFIA INC.
Inventor： Yusuke MATSUBARA , Mitsuru OKIGAWA , Hiroyuki ANDO , Takashi SHINOHE
Abstract: Provided a semiconductor device including: a semiconductor layer with an extended depletion layer; and an electrode disposed on the semiconductor layer directly or via another layer, the semiconductor layer including a first region containing, as a major component, a crystalline oxide semiconductor containing gallium, and a second region containing, as a major component, an oxide containing gallium, the second region including a linear crystal defect region in a cross section perpendicular to an upper surface of the semiconductor layer.
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公开(公告)号：US20230207541A1
公开(公告)日：2023-06-29
申请号：US18111227
申请日：2023-02-17
Applicant: FLOSFIA INC.
Inventor： Hideaki YANAGIDA , Takashi SHINOHE , Hiroyuki ANDO , Yusuke MATSUBARA , Hidehito KITAKADO
IPC: H01L25/16 , H01L23/00 , H01L23/538 , H02P27/06 , H02P29/024
CPC classification number: H01L25/16 , H01L24/20 , H01L23/5383 , H01L23/5386 , H01L23/5389 , H02P27/06 , H02P29/027 , H01L2924/10253 , H01L2924/1067 , H01L2924/12031 , H01L2924/12032 , H01L2924/12036 , H01L2924/1207 , H01L2924/13091
Abstract: Provided is a semiconductor device including, a plurality of PN junction diodes each having a negative temperature characteristic and connected to each other in series; a plurality of resistance elements connected respectively to the PN junction diodes in parallel and connected to each other in series; and a Schottky barrier diode having a positive temperature characteristic and connected to the PN junction diodes in parallel.
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