公开(公告)号：US20240307914A1

公开(公告)日：2024-09-19

申请号：US18603922

申请日：2024-03-13

Applicant: FLOSFIA INC.

Inventor： Makoto SHIMIZU ,  Hiroshi SHIHO ,  Hiroyuki ANDO ,  Naoyuki TSUKAMOTO ,  Yuji KATO

IPC: B05D1/00 ,  C09D4/00

CPC classification number: B05D1/60 ,  B05D1/005 ,  C09D4/00 ,  B05D2203/30

Abstract: The present disclosure provides a film formation method having an excellent mass productivity.
The present disclosure provides a film formation method using one aqueous solution or different aqueous solutions containing at least one of a metal complex having two or more different ligands and a metal complex having same ligands and substituents as well as a gallium compound, in which the metal complex having the two or more different ligands has nitrogen atom, and the metal complex having the same ligands and substituents has a halogen atom.

公开(公告)号：US20230290888A1

公开(公告)日：2023-09-14

申请号：US18106095

申请日：2023-02-06

Applicant: FLOSFIA INC.

Inventor： Hideaki YANAGIDA ,  Shogo MIZUMOTO ,  Hiroyuki ANDO ,  Yusuke MATSUBARA

IPC: H01L29/872 ,  H01L29/808 ,  H01L29/24 ,  H01L29/47 ,  H01L29/04

CPC classification number: H01L29/872 ,  H01L29/808 ,  H01L29/24 ,  H01L29/47 ,  H01L29/04

Abstract: Provided is a semiconductor element including at least, a semiconductor layer including a crystalline oxide semiconductor as a major component; an electrode layer laminated on the semiconductor layer; and a conductive substrate laminated on the electrode layer directly or with another layer in between, the conductive substrate containing at least a first metal selected from the metals in group 11 in the periodic table and a second metal different from the first metal in coefficient of liner thermal expansion.

公开(公告)号：US20230253462A1

公开(公告)日：2023-08-10

申请号：US18107684

申请日：2023-02-09

Applicant: FLOSFIA INC. ,  MIRISE Technologies Corporation ,  DENSO CORPORATION

Inventor： Takashi SHINOHE ,  Hiroyuki ANDO ,  Yasushi HIGUCHI ,  Shinpei MATSUDA ,  Kazuya TANIGUCHI ,  Hiroki WATANABE ,  Hideo MATSUKI

IPC: H01L29/24 ,  H01L21/02 ,  H01L29/04 ,  H01L29/78 ,  C01G55/00 ,  C30B29/68 ,  C30B29/24

CPC classification number: H01L29/24 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02483 ,  H01L21/02414 ,  H01L21/0242 ,  H01L21/02565 ,  H01L21/02598 ,  H01L21/0262 ,  H01L29/045 ,  H01L21/02609 ,  H01L29/7813 ,  C01G55/002 ,  C30B29/68 ,  C30B29/24 ,  C01P2002/50 ,  C01P2006/40 ,  C01P2006/32 ,  C01P2002/72

Abstract: Provided is a crystalline oxide film including: a plane tilted from a c-plane as a principal plane; gallium; and a metal in Group 9 of the periodic table, the metal in Group 9 of the periodic table among all metallic elements in the film having an atomic ratio of equal to or less than 23%.

公开(公告)号：US20230207431A1

公开(公告)日：2023-06-29

申请号：US18111221

申请日：2023-02-17

Applicant: FLOSFIA INC.

Inventor： Hideaki YANAGIDA ,  Takashi SHINOHE ,  Hiroyuki ANDO ,  Yusuke MATSUBARA ,  Hidehito KITAKADO

IPC: H01L23/495 ,  H01L29/872 ,  H01L29/868 ,  H01L25/07 ,  H01L25/18

CPC classification number: H01L23/49575 ,  H01L23/49503 ,  H01L23/49562 ,  H01L25/18 ,  H01L25/072 ,  H01L29/868 ,  H01L29/872 ,  H01L24/48 ,  H01L2224/48245

Abstract: Provided is a semiconductor device including, a plurality of PN junction diodes each having a negative temperature characteristic and connected to each other in series; a Schottky barrier diode having a positive temperature characteristic and connected to the PN junction diodes in parallel; and a die pad on which at least one of the PN junction diodes and the Schottky barrier diode are mounted commonly.

公开(公告)号：US20240309556A1

公开(公告)日：2024-09-19

申请号：US18603541

申请日：2024-03-13

Applicant: FLOSFIA INC.

Inventor： Makoto SHIMIZU ,  Hiroshi SHIHO ,  Hiroyuki ANDO ,  Naoyuki TSUKAMOTO ,  Yuji KATO

IPC: C30B29/54 ,  C30B25/18

CPC classification number: C30B29/54 ,  C30B25/18

Abstract: The present disclosure provides a film formation method having an excellent mass productivity.
In the film formation method, at least one of a metal complex having two or more different ligands, and a metal complex having same ligands and substituents is used.

公开(公告)号：US20240307913A1

公开(公告)日：2024-09-19

申请号：US18603868

申请日：2024-03-13

Applicant: FLOSFIA INC.

Inventor： Makoto Shimizu ,  Hiroshi SHIHO ,  Hiroyuki ANDO ,  Naoyuki TSUKAMOTO ,  Yuji KATO

IPC: B05D1/00 ,  C09D4/00

CPC classification number: B05D1/60 ,  B05D1/005 ,  C09D4/00 ,  B05D2203/30

Abstract: The present disclosure provides a film formation method having an excellent mass productivity.
In the film formation method, a metal complex is used, which shows an exothermic peak at 480°° C. to 520°° C. in a thermogravimetric-differential thermal analysis at a temperature increase rate of 20° C./min under an oxygen-containing atmosphere.

公开(公告)号：US20220384663A1

公开(公告)日：2022-12-01

申请号：US17882148

申请日：2022-08-05

Applicant: FLOSFIA INC.

Inventor： Yusuke MATSUBARA ,  Osamu IMAFUJI ,  Hiroyuki ANDO ,  Hideki TAKEHARA ,  Takashi SHINOHE ,  Mitsuru OKIGAWA

IPC: H01L29/872 ,  H01L29/24

Abstract: Provided is a semiconductor element including: a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide, as a major component, having a corundum structure, the conductive substrate having a larger area than the oxide semiconductor film.

公开(公告)号：US20250133757A1

公开(公告)日：2025-04-24

申请号：US19005007

申请日：2024-12-30

Applicant: FLOSFIA INC.

Inventor： Yusuke MATSUBARA ,  Mitsuru OKIGAWA ,  Hiroyuki ANDO ,  Takashi SHINOHE

IPC: H10D8/60 ,  H10D8/01 ,  H10D62/00 ,  H10D62/53 ,  H10D62/80

Abstract: Provided a semiconductor device including: a semiconductor layer with an extended depletion layer; and an electrode disposed on the semiconductor layer directly or via another layer, the semiconductor layer including a first region containing, as a major component, a crystalline oxide semiconductor containing gallium, and a second region containing, as a major component, an oxide containing gallium, the second region including a linear crystal defect region in a cross section perpendicular to an upper surface of the semiconductor layer.

公开(公告)号：US20240312854A1

公开(公告)日：2024-09-19

申请号：US18603969

申请日：2024-03-13

Applicant: FLOSFIA INC.

Inventor： Hiroyuki ANDO ,  Naoyuki TSUKAMOTO ,  Yuji KATO

IPC: H01L23/29 ,  H01L23/31 ,  H01L23/50

CPC classification number: H01L23/291 ,  H01L23/298 ,  H01L23/3178 ,  H01L23/50

Abstract: The present disclosure provides a laminated structure suitable for semiconductor elements.
The laminated structure includes a first oxide layer having a trench structure on its surface and a second oxide layer laminated along the trench structure. A difference in thickness between centers of a bottom and a sidewall of the second oxide layer is less than 30%.

公开(公告)号：US20230207541A1

公开(公告)日：2023-06-29

申请号：US18111227

申请日：2023-02-17

Applicant: FLOSFIA INC.

Inventor： Hideaki YANAGIDA ,  Takashi SHINOHE ,  Hiroyuki ANDO ,  Yusuke MATSUBARA ,  Hidehito KITAKADO

IPC: H01L25/16 ,  H01L23/00 ,  H01L23/538 ,  H02P27/06 ,  H02P29/024

CPC classification number: H01L25/16 ,  H01L24/20 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5389 ,  H02P27/06 ,  H02P29/027 ,  H01L2924/10253 ,  H01L2924/1067 ,  H01L2924/12031 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/1207 ,  H01L2924/13091

Abstract: Provided is a semiconductor device including, a plurality of PN junction diodes each having a negative temperature characteristic and connected to each other in series; a plurality of resistance elements connected respectively to the PN junction diodes in parallel and connected to each other in series; and a Schottky barrier diode having a positive temperature characteristic and connected to the PN junction diodes in parallel.