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1.发明授权Method of forming light emitting diode dies, light emitting diode wafer and light emitting diode die 有权形成发光二极管管芯，发光二极管晶片和发光二极管管芯的方法公开(公告)号：US09153743B2
公开(公告)日：2015-10-06
申请号：US13835367
申请日：2013-03-15
Applicant: Genesis Photonics Inc.
Inventor： Cheng-Hung Lin , Yu-Yun Lo , Cheng-Yen Chen , Yu-Hung Lai
CPC classification number: H01L33/36 , H01L27/15 , H01L33/005 , H01L33/0095 , H01L2933/0025
Abstract: A method of forming light emitting diode dies includes: forming an epitaxial layered structure that defines light emitting units on a front surface of a substrate wafer; forming a photoresist layer over a back surface of the substrate wafer; aligning the substrate wafer and patterning the photoresist layer so as to form openings in the photoresist layer, each of the openings having an area less than a projected area of the respective light emitting unit; forming a solder layer on the photoresist layer such that the solder layer fills the openings in the photoresist layer; removing the photoresist layer and a portion of the solder layer that covers the photoresist layer from the substrate wafer; and dicing the substrate wafer.
Abstract translation: 一种形成发光二极管管芯的方法包括：形成在衬底晶片的前表面上限定发光单元的外延层状结构; 在所述衬底晶片的背面上形成光致抗蚀剂层; 对准衬底晶片并图案化光致抗蚀剂层以在光致抗蚀剂层中形成开口，每个开口具有小于相应发光单元的投影面积的面积; 在光致抗蚀剂层上形成焊料层，使得焊料层填充光致抗蚀剂层中的开口; 从衬底晶片去除光致抗蚀剂层和覆盖光致抗蚀剂层的焊料层的一部分; 并切割衬底晶片。
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2.发明申请METHOD OF FORMING LIGHT EMITTING DIODE DIES, LIGHT EMITTING DIODE WAFER AND LIGHT EMITTING DIODE DIE 有权形成发光二极管，发光二极管和发光二极管的方法公开(公告)号：US20140103367A1
公开(公告)日：2014-04-17
申请号：US13835367
申请日：2013-03-15
Applicant: GENESIS PHOTONICS INC.
Inventor： Cheng-Hung Lin , Yu-Yun Lo , Cheng-Yen Chen , Yu-Hung Lai
CPC classification number: H01L33/36 , H01L27/15 , H01L33/005 , H01L33/0095 , H01L2933/0025
Abstract: A method of forming light emitting diode dies includes: forming an epitaxial layered structure that defines light emitting units on a front surface of a substrate wafer; forming a photoresist layer over a back surface of the substrate wafer; aligning the substrate wafer and patterning the photoresist layer so as to form openings in the photoresist layer, each of the openings having an area less than a projected area of the respective light emitting unit; forming a solder layer on the photoresist layer such that the solder layer fills the openings in the photoresist layer; removing the photoresist layer and a portion of the solder layer that covers the photoresist layer from the substrate wafer; and dicing the substrate wafer.
Abstract translation: 一种形成发光二极管管芯的方法包括：形成在衬底晶片的前表面上限定发光单元的外延层状结构; 在所述衬底晶片的背面上形成光致抗蚀剂层; 对准衬底晶片并图案化光致抗蚀剂层以在光致抗蚀剂层中形成开口，每个开口具有小于相应发光单元的投影面积的面积; 在光致抗蚀剂层上形成焊料层，使得焊料层填充光致抗蚀剂层中的开口; 从衬底晶片去除光致抗蚀剂层和覆盖光致抗蚀剂层的焊料层的一部分; 并切割衬底晶片。
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