公开(公告)号：US20190051502A1

公开(公告)日：2019-02-14

申请号：US15892041

申请日：2018-02-08

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ryoji ASAKURA ,  Shota UMEDA ,  Daisuke SHIRAISHI ,  Akira KAGOSHIMA ,  Satomi INOUE

IPC: H01J37/32 ,  H01L21/67 ,  G01J3/443

Abstract: The plasma processing apparatus includes a plasma processing unit that performs plasma processing of a sample and a control unit that controls the plasma processing. The control unit selects one of a plurality of the prediction models for predicting a result of the plasma processing based on a state of the plasma processing unit, and predicts the result of the plasma processing by using a selected prediction model.

公开(公告)号：US20190221407A1

公开(公告)日：2019-07-18

申请号：US16123208

申请日：2018-09-06

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Shota UMEDA ,  Keita NOGI ,  Akira KAGOSHIMA ,  Daisuke SHIRAISHI

IPC: H01J37/32 ,  G01J3/443 ,  H01L21/67

CPC classification number: H01J37/32926 ,  G01J3/443 ,  H01J37/32972 ,  H01L21/67253

Abstract: Provided is a plasma processing apparatus including a processing unit in which a sample is plasma processed and which includes a monitor (optical emission spectroscopy) that monitors light emission of plasma, wherein the processing unit includes a prediction model storage unit that stores a prediction model predicting a plasma processing result, and a control device in which the plasma processing result is predicted by using a prediction model selected based on light emission data and device data as an indicator of state change of the processing unit.