公开(公告)号：US11522078B2

公开(公告)日：2022-12-06

申请号：US16629156

申请日：2018-07-06

Applicant: Indian Institute of Science

Inventor： Rohith Soman ,  Ankit Soni ,  Mayank Shrivastava ,  Srinivasan Raghavan ,  Navakant Bhat

IPC: H01L29/778 ,  H01L29/06 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/423

Abstract: A High Electron Mobility Transistor (HEMT) having a reduced surface field (RESURF) junction is provided. The HEMT includes a source electrode at a first end and a drain electrode at a second end. A gate electrode is provided between the source electrode and the drain electrode. A reduced surface field (RESURF) junction extends from the first end to the second end. The gate electrode is provided above the RESURF junction. A buried channel layer is formed in the RESURF junction on application of a positive voltage at the gate electrode. The RESURF junction includes an n-type Gallium nitride (GaN) layer and a p-type GaN layer. The n-type GaN layer is provided between the p-type GaN layer and the gate electrode.

公开(公告)号：US20190067440A1

公开(公告)日：2019-02-28

申请号：US16114650

申请日：2018-08-28

Applicant: INDIAN INSTITUTE OF SCIENCE

Inventor： Mayank Shrivastava ,  Sayak Dutta Gupta ,  Ankit Soni ,  Srinivasan Raghavan ,  Navakanta Bhat

IPC: H01L29/49 ,  H01L29/778 ,  H01L21/02

Abstract: The present disclosure provides an improved enhancement mode field effect transistor (FET) having an oxide (AlxTi1-xO) emulating p-type gate. The present disclosure provides a novel enhancement mode High Electron Mobility Transistor (HEMT) structure with AlxTi1-xO Gate Oxide Engineering as Replacement of p-GaN Gate. In an aspect, the present disclosure provides a hybrid gate stack that combines p-GaN technology with the proposed oxide for e-mode operation. The HEMT structure with AlxTi1-xO Gate oxide provides a threshold voltage tuning from negative to positive by changing p-doping composition. Using a developed p-type oxide, e-mode device shows ON current ˜400 mA/mm, sub-threshold slope of 73 mV/dec, Ron=8.9 Ωmm, interface trap density