公开(公告)号：US12242290B2

公开(公告)日：2025-03-04

申请号：US17484286

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： Beomseok Choi ,  William J. Lambert ,  Krishna Bharath ,  Kaladhar Radhakrishnan ,  Adel Elsherbini ,  Henning Braunisch ,  Stephen Morein ,  Aleksandar Aleksov ,  Feras Eid

IPC: G05F1/44 ,  H01L23/50 ,  H01L25/065

Abstract: In one embodiment, an apparatus includes a first die with voltage regulator circuitry and a second die with logic circuitry. The apparatus further includes an inductor, a capacitor, and a conformal power delivery structure on the top side of the apparatus, where the voltage regulator circuitry is connected to the logic circuitry through the inductor, the capacitor, and the conformal power delivery structure. The conformal power delivery structure includes a first electrically conductive layer defining one or more recesses, a second electrically conductive layer at least partially within the recesses of the first electrically conductive layer and having a lower surface that generally conforms with the upper surface of the first electrically conductive layer, and a dielectric material between the surfaces of the first electrically conductive layer and the second electrically conductive layer that conform with one another.

公开(公告)号：US20240072419A1

公开(公告)日：2024-02-29

申请号：US18504376

申请日：2023-11-08

Applicant: Intel Corporation

Inventor： Sidharth Dalmia ,  Jonathan Jensen ,  Ozgur Inac ,  Trang Thai ,  William J. Lambert ,  Benjamin Jann

IPC: H01Q1/24 ,  H01Q1/22 ,  H01Q9/04

CPC classification number: H01Q1/243 ,  H01Q1/2283 ,  H01Q9/0414 ,  H01Q1/38

Abstract: Disclosed herein are integrated circuit (IC) packages, antenna boards, antenna modules, and communication devices (e.g., for millimeter wave communications). For example, in some embodiments, an antenna module may include: a logic die; a radio frequency front-end (RFFE) die in electrical communication with the logic die; and an antenna patch, wherein the RFFE die is closer to the antenna patch than the logic die is to the antenna patch.

公开(公告)号：US20230068300A1

公开(公告)日：2023-03-02

申请号：US17412724

申请日：2021-08-26

Applicant: INTEL CORPORATION

Inventor： Krishna Bharath ,  William J. Lambert ,  Christopher Schaef ,  Alexander Lyakhov ,  Kaladhar Radhakrishnan ,  Sriram Srinivasan

IPC: H01L25/16 ,  H01L23/31 ,  H01L49/02 ,  H01L23/48 ,  H01L23/498 ,  H01L23/00 ,  H01L25/00

Abstract: A microelectronic assembly is provided, comprising a first IC die having an electrical load circuit, a second IC die having a portion of a voltage regulator (VR) electrically coupled to the first IC die, a package substrate having inductors of the VR electrically coupled to the first IC die and the second IC die, and a mold compound between the first IC die and the package substrate. The VR receives power at a first voltage from the package substrate and provides power at a second voltage to the electrical load circuit, the second voltage being lower than the first voltage. In various embodiments, the second IC die is in the mold compound. In some embodiments, the mold compound and the second IC die are comprised in a discrete interposer electrically coupled to the first IC die with die-to-die interconnects and to the package substrate with die-to-package substrate interconnects.

公开(公告)号：US10658765B2

公开(公告)日：2020-05-19

申请号：US16021474

申请日：2018-06-28

Applicant: Intel Corporation

Inventor： Sri Chaitra Jyotsna Chavali ,  Sanka Ganesan ,  William J. Lambert ,  Debendra Mallik ,  Zhichao Zhang

IPC: H01Q1/38 ,  H01Q25/00 ,  H01Q9/04

Abstract: A method of forming a planar antenna on a first substrate. An antenna feedline is formed on a peelable copper film of a carrier. A dielectric with no internal conductive layer is formed on the feedline. A planar antenna is formed on one of two parallel sides of the dielectric and a feed port is formed adjacent the other parallel side. The feedline connects the antenna with the feed port. One plane of the planar antenna is configured for perpendicular attachment to a second substrate. The feedline is connected to the planar antenna by a via through the dielectric. The peelable copper is removed and the structure is etched to produce the planar antenna on the substrate. Two planar antennas on substrates can be perpendicularly attached to another substrate to form side-firing antennas.

公开(公告)号：US20200006305A1

公开(公告)日：2020-01-02

申请号：US16022511

申请日：2018-06-28

Applicant: Intel Corporation

Inventor： William J. Lambert ,  Krishna Bharath ,  Beomseok Choi ,  Robert Sankman

IPC: H01L25/18 ,  H01L25/065 ,  H02M1/08

Abstract: A semiconductor package includes a first die and a second die. The first die includes a first plurality of compound semiconductor transistors, and where the first die includes a first section of a Power Management Circuitry (PMC). The second die includes a second plurality of transistors that are arranged as a plurality of CMOS (Complementary metal-oxide-semiconductor) circuitries, and where the second die includes a second section of the PMC. The PMC includes a power converter that includes: a plurality of power switches, a plurality of driver circuitries to correspondingly control the plurality of power switches, and a controller to control the driver circuitries. The first section of the PMC in the first die includes the plurality of power switches, and the second section of the PMC in the second die includes at least a part of the controller.

公开(公告)号：US20180101207A1

公开(公告)日：2018-04-12

申请号：US15695947

申请日：2017-09-05

Applicant: INTEL CORPORATION

Inventor： Krishna Bharath ,  Srikrishnan Venkataraman ,  William J. Lambert ,  Michael J. Hill ,  Alexander Slepoy ,  Dong Zhong ,  Kaladhar Radhakrishnan ,  Hector A. Aguirre Diaz ,  Jonathan P. Douglas

IPC: G06F1/26

CPC classification number: G06F1/26 ,  G06F1/3203 ,  H01L23/645 ,  H02J1/00 ,  H02M1/14 ,  H02M3/158 ,  H02M3/1584 ,  H02M2001/008 ,  H02M2003/1586

Abstract: Described is an apparatus which comprises: a first voltage regulator (VR) coupled to first one or more inductors, the first VR is to provide power to a first power domain; and a second VR coupled to second one or more inductors at least one of which is inductively coupled to at least one of the first one or more inductors, the second VR is to provide power to a second power domain separate from the first power domain, wherein there is a non-zero phase angle offset between switching transistors of the first VR relative to the second VR.

公开(公告)号：US09397071B2

公开(公告)日：2016-07-19

申请号：US14102757

申请日：2013-12-11

Applicant: Intel Corporation

Inventor： Omkar G. Karhade ,  John S. Guzek ,  Johanna M. Swan ,  Christopher J. Nelson ,  Nitin A. Deshpande ,  William J. Lambert ,  Charles A. Gealer ,  Feras Eid ,  Islam A. Salama ,  Kemal Aygun ,  Sasha N. Oster ,  Tyler N. Osborn

IPC: H05K7/00 ,  H01L25/00 ,  H01L23/00 ,  H01L25/065 ,  H01L23/538 ,  H05K1/18

CPC classification number: H01L25/16 ,  H01L23/5383 ,  H01L23/5386 ,  H01L23/5387 ,  H01L24/50 ,  H01L24/86 ,  H01L25/00 ,  H01L25/0655 ,  H01L2224/0405 ,  H01L2224/04105 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/05647 ,  H01L2224/29078 ,  H01L2224/86203 ,  H01L2224/86815 ,  H05K1/185 ,  Y10T29/49155 ,  H01L2924/00014 ,  H01L2924/014

Abstract: A microelectronic package of the present description may comprises a first microelectronic device having at least one row of connection structures electrically connected thereto and a second microelectronic device having at least one row of connection structures electrically connected thereto, wherein the connection structures within the at least one first microelectronic device row are aligned with corresponding connection structures within the at least one second microelectronic device row in an x-direction. An interconnect comprising an interconnect substrate having a plurality of electrically isolated conductive traces extending in the x-direction on a first surface of the interconnect substrate may be attached to the at least one first microelectronic device connection structure row and the at least one second microelectronic device connection structure row, such that at least one interconnect conductive trace forms a connection between a first microelectronic device connection structure and its corresponding second microelectronic device connection structure.

Abstract translation: 本说明书的微电子封装可以包括具有与其电连接的至少一行连接结构的第一微电子器件和具有与其电连接的至少一排连接结构的第二微电子器件，其中所述至少一个 第一微电子器件行与X方向上的至少一个第二微电子器件行内的对应连接结构对准。 包括具有在互连衬底的第一表面上沿x方向延伸的多个电隔离导电迹线的互连衬底的互连可以附接到所述至少一个第一微电子器件连接结构行和所述至少一个第二微电子器件 连接结构行，使得至少一个互连导电迹线形成第一微电子器件连接结构与其对应的第二微电子器件连接结构之间的连接。

公开(公告)号：US12132015B2

公开(公告)日：2024-10-29

申请号：US16665682

申请日：2019-10-28

Applicant: Intel Corporation

Inventor： William J. Lambert ,  Sri Chaitra Jyotsna Chavali

IPC: H01L23/64 ,  H01F27/28 ,  H01F27/32 ,  H01F41/04 ,  H01F41/12 ,  H01L21/48 ,  H01L23/00 ,  H01L23/49 ,  H01L23/498

CPC classification number: H01L23/645 ,  H01F27/2804 ,  H01F27/327 ,  H01F41/041 ,  H01F41/127 ,  H01L21/486 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/16 ,  H01F2027/2809 ,  H01L2224/16225 ,  H01L2924/1427 ,  H01L2924/18161 ,  H01L2924/19103

Abstract: Embodiments include inductors and methods to form the inductors. An inductor includes a substrate layer that surrounds a magnetic layer, where the magnetic layer is embedded between the substrate layer. The inductor also includes a dielectric layer that surrounds the substrate and magnetic layers, where the dielectric layer fully embeds the substrate and magnetic layers. The inductor further includes a first conductive layer over the dielectric layer, a second conductive layer below the dielectric layer, and a plurality of plated-through-hole (PTH) vias in the dielectric and substrate layers. The PTH vias vertically extend from the first conductive layer to the second conductive layer, and the magnetic layer in between the PTH vias. The magnetic layer may have a thickness that is substantially equal to a thickness of the substrate layer, where the thickness of the magnetic layer is less than a thickness defined between the first and second conductive layers.

公开(公告)号：US12068684B2

公开(公告)日：2024-08-20

申请号：US17030132

申请日：2020-09-23

Applicant: Intel Corporation

Inventor： Krishna Bharath ,  Christopher Schaef ,  William J. Lambert ,  Kaladhar Radhakrishnan

IPC: H02M3/04 ,  H01F27/24 ,  H01L49/02 ,  H03K19/21

CPC classification number: H02M3/04 ,  H01F27/24 ,  H01L28/10 ,  H03K19/21

Abstract: Embodiments disclosed herein include inductor arrays. In an embodiment, an inductor array comprises a first inductor with a first inductance. In an embodiment, the first inductor is switched at a first frequency. In an embodiment, the inductor array further comprises a second inductor with a second inductance that is different than the first inductance. In an embodiment, the second inductor is switched at a second frequency that is different than the first frequency.

公开(公告)号：US12002745B2

公开(公告)日：2024-06-04

申请号：US17544693

申请日：2021-12-07

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Mathew J. Manusharow ,  Krishna Bharath ,  William J. Lambert ,  Robert L. Sankman ,  Aleksandar Aleksov ,  Brandon M. Rawlings ,  Feras Eid ,  Javier Soto Gonzalez ,  Meizi Jiao ,  Suddhasattwa Nad ,  Telesphor Kamgaing

IPC: H05K1/02 ,  H01F17/00 ,  H01F17/06 ,  H01F27/28 ,  H01F27/40 ,  H01F41/04 ,  H01G4/18 ,  H01G4/252 ,  H01G4/30 ,  H01G4/33 ,  H01L21/48 ,  H01L23/498 ,  H01L23/552 ,  H01L23/66 ,  H01L49/02

CPC classification number: H01L23/49838 ,  H01F17/0006 ,  H01F27/2804 ,  H01F27/40 ,  H01F41/041 ,  H01G4/33 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/66 ,  H01L28/00 ,  H01L28/10 ,  H01L28/60 ,  H01F2027/2809 ,  H01L2223/6661

Abstract: Embodiments of the invention include an electrical package and methods of forming the package. In one embodiment, a transformer may be formed in the electrical package. The transformer may include a first conductive loop that is formed over a first dielectric layer. A thin dielectric spacer material may be used to separate the first conductive loop from a second conductive loop that is formed in the package. Additional embodiments of the invention include forming a capacitor formed in the electrical package. For example, the capacitor may include a first capacitor plate that is formed over a first dielectric layer. A thin dielectric spacer material may be used to separate the first capacitor plate form a second capacitor plate that is formed in the package. The thin dielectric spacer material in the transformer and capacitor allow for increased coupling factors and capacitance density in electrical components.