公开(公告)号：US20230095846A1

公开(公告)日：2023-03-30

申请号：US17485039

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： Benjamin T. Duong ,  Srinivas V. Pietambaram ,  Aleksandar Aleksov ,  Helme Castro De La Torre ,  Kristof Darmawikarta ,  Darko Grujicic ,  Sashi S. Kandanur ,  Suddhasattwa Nad ,  Rengarajan Shanmugam ,  Thomas I. Sounart ,  Marcel A. Wall

IPC: H01L23/498 ,  H01G4/33 ,  H01L21/48

Abstract: Glass substrates having transverse capacitors for use with semiconductor packages and related methods are disclosed. An example semiconductor package includes a glass substrate having a through glass via between a first surface and a second surface opposite the first surface. A transverse capacitor is located in the through glass via. The transverse capacitor includes a dielectric material positioned in a first portion of the through glass via, a first barrier/seed layer positioned in a second portion of the through glass via, and a first conductive material positioned in a third portion of the through glass via.

公开(公告)号：US20190229082A1

公开(公告)日：2019-07-25

申请号：US15943289

申请日：2018-04-02

Applicant: Intel Corporation

Inventor： Suddhasattwa Nad ,  Rahul N. Manepalli ,  Marcel A. Wall

IPC: H01L23/00 ,  H01L23/532 ,  H05K1/02

Abstract: Techniques and mechanisms for bonding structures of a circuit device with a monolayer. In an embodiment, a patterned metallization layer or a first dielectric layer includes a first surface portion. The first surface portion is exposed to first molecules which each include a first head group and a first end group which is substantially non-reactive with the first head group. The first head groups attach to the first portion to form a first self-assembled monolayer, which is subsequently reacted with second molecules to form a second monolayer comprising moieties of the first molecules. In another embodiment, the first head group comprises a first moiety comprising a sulfur atom or a nitrogen atom, where the first end group comprises one of an acid moiety, an acid anhydride moiety, an aliphatic alcohol moiety, an aromatic alcohol moiety, or an unsaturated hydrocarbon moiety.

公开(公告)号：US20230402368A1

公开(公告)日：2023-12-14

申请号：US17837732

申请日：2022-06-10

Applicant: Intel Corporation

Inventor： Benjamin T. Duong ,  Brian P. Balch ,  Kristof Darmawikarta ,  Darko Grujicic ,  Suddhasattwa Nad ,  Xing Sun ,  Marcel A. Wall ,  Yi Yang

IPC: H01L23/522 ,  H01C7/00 ,  H01L49/02

CPC classification number: H01L23/5228 ,  H01L28/24 ,  H01L23/5226 ,  H01C7/006

Abstract: Techniques for thin-film resistors in vias are disclosed. In the illustrative embodiment, thin-film resistors are formed in through-glass vias of a glass substrate of an interposer. The thin-film resistors do not take up a significant amount of area on a layer of the interposer, as the thin-film resistor extends vertically through a via rather than horizontally on a layer of the interposer. The thin-film resistors may be used for any suitable purpose, such as power dissipation or voltage control, current control, as a pull-up or pull-down resistor, etc.

公开(公告)号：US20170176173A1

公开(公告)日：2017-06-22

申请号：US14973131

申请日：2015-12-17

Applicant: Intel Corporation

Inventor： Yanmei Song ,  Yongmei Liu ,  Deepak Goyal ,  Donglai David Lu ,  Marcel A. Wall

IPC: G01B11/06

CPC classification number: G01B11/065

Abstract: Described herein are devices and techniques for measuring a thickness of a surface layer. A device can include a detector, a processor, and a memory. The detector can be arranged to receive reflected light from a surface of a sample. The processor can be in electrical communication with the detector. The memory can store instructions that, when executed by the processor, can cause the processor to perform operations. The operations can include receiving optical data from the detector, determining a polarization change of the reflected light, the polarization change being a function of the optical data, and determining a thickness of the surface layer using the polarization change and the wavelength of the incident light. The optical data can include information regarding the phase difference of the reflected light and the incident light. Also described are other embodiments.

公开(公告)号：US20240186264A1

公开(公告)日：2024-06-06

申请号：US18061083

申请日：2022-12-02

Applicant: Intel Corporation

Inventor： Yi Yang ,  Eungnak Han ,  Suddhasattwa Nad ,  Marcel A. Wall

IPC: H01L23/00 ,  B32B17/10 ,  C09D201/00 ,  H01L21/48 ,  H01L23/15 ,  H01L23/498

CPC classification number: H01L23/562 ,  B32B17/10 ,  C09D201/00 ,  H01L21/486 ,  H01L23/15 ,  H01L23/49827 ,  H01L23/49894 ,  B32B2255/10 ,  B32B2255/205 ,  B32B2270/00 ,  B32B2307/732 ,  B32B2457/08

Abstract: In one embodiment, an apparatus includes a glass substrate, a metal, and a polymeric layer between the metal and the glass substrate. The polymeric layer includes polymer molecules with an R1 group, an R2 group, a polymer backbone between the R1 group and R2 group, and an R3 group side-attached to the polymer backbone. The polymeric layer is bonded to the glass substrate via the R1 groups and bonded to the metal via the R2 groups.

公开(公告)号：US11291122B2

公开(公告)日：2022-03-29

申请号：US16637545

申请日：2017-09-22

Applicant: Intel Corporation

Inventor： Darko Grujicic ,  Rengarajan Shanmugam ,  Sandeep Gaan ,  Adrian Bayraktaroglu ,  Roy Dittler ,  Ke Liu ,  Suddhasattwa Nad ,  Marcel A. Wall ,  Rahul N. Manepalli ,  Ravindra V. Tanikella

IPC: C23C18/38 ,  H05K3/38 ,  C23C18/16 ,  C23C18/18 ,  H01L21/48 ,  H05K3/42 ,  H05K3/46 ,  H05K1/11 ,  H01L23/14

Abstract: Embodiments of the present disclosure describe techniques for providing an apparatus with a substrate provided with plasma treatment. In some instances, the apparatus may include a substrate with a surface that comprises a metal layer to provide signal routing in the apparatus. The metal layer may be provided in response to a plasma treatment of the surface with a functional group containing a gas (e.g., nitrogen-based gas), to provide absorption of a transition metal catalyst into the surface, and subsequent electroless plating of the surface with a metal. The transition metal catalyst is to enhance electroless plating of the surface with the metal. Other embodiments may be described and/or claimed.

公开(公告)号：US11177232B2

公开(公告)日：2021-11-16

申请号：US15943289

申请日：2018-04-02

Applicant: Intel Corporation

Inventor： Suddhasattwa Nad ,  Rahul N. Manepalli ,  Marcel A. Wall

IPC: H01L23/532 ,  H01L23/00 ,  H05K1/02 ,  C08L101/02

Abstract: Techniques and mechanisms for bonding structures of a circuit device with a monolayer. In an embodiment, a patterned metallization layer or a first dielectric layer includes a first surface portion. The first surface portion is exposed to first molecules which each include a first head group and a first end group which is substantially non-reactive with the first head group. The first head groups attach to the first portion to form a first self-assembled monolayer, which is subsequently reacted with second molecules to form a second monolayer comprising moieties of the first molecules. In another embodiment, the first head group comprises a first moiety comprising a sulfur atom or a nitrogen atom, where the first end group comprises one of an acid moiety, an acid anhydride moiety, an aliphatic alcohol moiety, an aromatic alcohol moiety, or an unsaturated hydrocarbon moiety.

公开(公告)号：US20170170080A1

公开(公告)日：2017-06-15

申请号：US14968401

申请日：2015-12-14

Applicant: Intel Corporation

Inventor： Darko Grujicic ,  Nilanjan Ghosh ,  Marcel A. Wall ,  Deepak Goyal

IPC: H01L21/66 ,  H01L21/288 ,  H01L21/285 ,  C23C14/54 ,  H01L21/67 ,  C23C18/16 ,  C23C14/34 ,  H01L21/48 ,  H01L21/3213

CPC classification number: H01L22/26 ,  C23C14/34 ,  C23C14/542 ,  C23C18/1633 ,  C23C18/1671 ,  C23C18/1675 ,  C23C18/38 ,  H01L21/4814 ,  H01L21/4846 ,  H01L21/67253 ,  H01L22/14

Abstract: A material thickness adjustment device and associated methods are shown. Material thickness adjustment devices and methods shown include eddy current measurement to determine material thickness during a deposition or removal operation. Feedback from the measured thickness may then be applied to adjust one or more processing parameters to meet a desired thickness.