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公开(公告)号：US20170334714A1
公开(公告)日：2017-11-23
申请号：US15160127
申请日：2016-05-20
Applicant: INVENSENSE, INC.
Inventor： Jia Gao , Brian Kim , Peter George Hartwell , Mozafar Maghsoudnia
IPC: B81B7/02
CPC classification number: B81B7/02 , B81B2201/0257 , B81B2201/0264 , B81B2207/012 , B81B2207/098 , B81C1/0023 , B81C1/00277 , B81C1/00285 , H01L23/10 , H01L2224/05014 , H01L2224/16225 , H01L2224/32145 , H01L2224/48091 , H01L2224/48137 , H01L2224/48465 , H01L2224/73265 , H01L2924/15151 , H01L2924/16152 , H04R1/028 , H04R1/04 , H01L2924/00014
Abstract: Integrated microelectromechanical systems (MEMS) acoustic sensor devices are disclosed. Integrated MEMS acoustic sensor devices can comprise a MEMS acoustic sensor element and a pressure sensor within the back cavity associated with the MEMS acoustic sensor element. Integrated MEMS acoustic sensor devices can comprise a port adapted to receive acoustic waves or pressure. Methods of fabrication are also disclosed.
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Patent Agency Ranking
公开(公告)号：US20160167956A1
公开(公告)日：2016-06-16
申请号：US15047579
申请日：2016-02-18
Applicant: Invensense, Inc.
Inventor： Fang Liu , Michael Julian Daneman , Brian Kim , Anthony Minervini
IPC: B81C1/00
CPC classification number: B81C1/00238 , B81B3/0018 , B81B2201/0257 , B81C1/00309 , B81C2203/0792 , H01L24/05 , H01L27/092 , H01L2924/01322 , H01L2924/12042 , H04R19/005 , H01L2924/00
Abstract: A MEMS device includes a MEMS substrate with a movable element. Further included is a CMOS substrate with a cavity, the MEMS substrate disposed on top of the CMOS substrate. Additionally, a back cavity is connected to the CMOS substrate, the back cavity being formed at least partially by the cavity in the CMOS substrate and the movable element being acoustically coupled to the back cavity.
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3.发明申请INTEGRATED CMOS BACK CAVITY ACOUSTIC TRANSDUCER AND THE METHOD OF PRODUCING THE SAME 有权集成式CMOS反射孔声波传感器及其生产方法公开(公告)号：US20150102390A1
公开(公告)日：2015-04-16
申请号：US14054495
申请日：2013-10-15
Applicant: Invensense, Inc.
Inventor： Fang Liu , Michael Julian Daneman , Brian Kim , Anthony Minervini
IPC: B81B7/00 , H01L23/00 , H01L27/092
CPC classification number: B81C1/00238 , B81B3/0018 , B81B2201/0257 , B81C1/00309 , B81C2203/0792 , H01L24/05 , H01L27/092 , H01L2924/01322 , H01L2924/12042 , H04R19/005 , H01L2924/00
Abstract: A MEMS device includes a MEMS substrate with a movable element. Further included is a CMOS substrate with a cavity, the MEMS substrate disposed on top of the CMOS substrate. Additionally, a back cavity is connected to the CMOS substrate, the back cavity being formed at least partially by the cavity in the CMOS substrate and the movable element being acoustically coupled to the back cavity.
Abstract translation: MEMS器件包括具有可移动元件的MEMS衬底。 还包括具有空腔的CMOS衬底，MEMS衬底设置在CMOS衬底的顶部上。 此外，后腔连接到CMOS衬底，后腔至少部分地由CMOS衬底中的空腔形成，并且可移动元件声耦合到后腔。
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公开(公告)号：US10351419B2
公开(公告)日：2019-07-16
申请号：US15160127
申请日：2016-05-20
Applicant: INVENSENSE, INC.
Inventor： Jia Gao , Brian Kim , Peter George Hartwell , Mozafar Maghsoudnia
Abstract: Integrated microelectromechanical systems (MEMS) acoustic sensor devices are disclosed. Integrated MEMS acoustic sensor devices can comprise a MEMS acoustic sensor element and a pressure sensor within the back cavity associated with the MEMS acoustic sensor element. Integrated MEMS acoustic sensor devices can comprise a port adapted to receive acoustic waves or pressure. Methods of fabrication are also disclosed.
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公开(公告)号：US09828240B2
公开(公告)日：2017-11-28
申请号：US15047579
申请日：2016-02-18
Applicant: Invensense, Inc.
Inventor： Fang Liu , Michael Julian Daneman , Brian Kim , Anthony Minervini
IPC: B81B3/00 , B81C1/00 , H01L29/00 , H01L21/00 , H04R19/04 , H01L29/84 , H01L27/092 , H01L23/00 , H04R19/00
CPC classification number: B81C1/00238 , B81B3/0018 , B81B2201/0257 , B81C1/00309 , B81C2203/0792 , H01L24/05 , H01L27/092 , H01L2924/01322 , H01L2924/12042 , H04R19/005 , H01L2924/00
Abstract: A MEMS device includes a MEMS substrate with a movable element. Further included is a CMOS substrate with a cavity, the MEMS substrate disposed on top of the CMOS substrate. Additionally, a back cavity is connected to the CMOS substrate, the back cavity being formed at least partially by the cavity in the CMOS substrate and the movable element being acoustically coupled to the back cavity.
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6.发明授权Integrated CMOS back cavity acoustic transducer and the method of producing the same 有权集成CMOS后腔声换能器及其制作方法公开(公告)号：US09299671B2
公开(公告)日：2016-03-29
申请号：US14054495
申请日：2013-10-15
Applicant: Invensense, Inc.
Inventor： Fang Liu , Michael Julian Daneman , Brian Kim , Anthony Minervini
IPC: B81B3/00 , B81C1/00 , H01L29/00 , H01L21/00 , H04R19/04 , H01L29/84 , H01L23/00 , H01L27/092 , H04R19/00
CPC classification number: B81C1/00238 , B81B3/0018 , B81B2201/0257 , B81C1/00309 , B81C2203/0792 , H01L24/05 , H01L27/092 , H01L2924/01322 , H01L2924/12042 , H04R19/005 , H01L2924/00
Abstract: A MEMS device includes a MEMS substrate with a movable element. Further included is a CMOS substrate with a cavity, the MEMS substrate disposed on top of the CMOS substrate. Additionally, a back cavity is connected to the CMOS substrate, the back cavity being formed at least partially by the cavity in the CMOS substrate and the movable element being acoustically coupled to the back cavity.
Abstract translation: MEMS器件包括具有可移动元件的MEMS衬底。 还包括具有空腔的CMOS衬底，MEMS衬底设置在CMOS衬底的顶部上。 此外，后腔连接到CMOS衬底，后腔至少部分地由CMOS衬底中的空腔形成，并且可移动元件声耦合到后腔。
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