Abstract:
Ion accelerating devices including connection mechanisms with integrated shielding electrode and related methods are disclosed. According to an embodiment, an ion accelerating device of an ion implantation system comprises: a first element; a first connection system within the first element, the first connection system including a first connector and a first encapsulated shielding electrode around the first connector; and a second connection system within a second element other than the first element, the second connection system being coupled to the first connector; wherein the first encapsulated shielding electrode includes a first shielding portion adjacent to a first interface surface of the first element where the second connection system interfaces with the first element, in a cross-sectional view, the first shielding portion being substantially U-shaped.
Abstract:
An apparatus includes a conductive structure and an insulated conductor disposed proximate an exterior portion of the conductive structure to modify an electric field about the conductive structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kilovolts (kV)/inch disposed about a conductor. An ion implanter is also provided. The ion implanter includes an ion source configured to provide an ion beam, a terminal structure defining a cavity, the ion source at least partially disposed within the cavity, and an insulated conductor. The insulated conductor is disposed proximate an exterior portion of the terminal structure to modify an electric field about the terminal structure. The insulated conductor has an insulator with a dielectric strength greater than 75 kV/inch disposed about a conductor.
Abstract:
A single trigger/shunt coil is utilized for combined induced magnetic field triggering and shunt impedance. The single coil connected in parallel with the high temperature superconducting element, is designed to generate a circulating current in the parallel circuit during normal operation to aid triggering the high temperature superconducting element to quench in the event of a fault. The circulating current is generated by an induced voltage in the coil, when the system current flows through the high temperature superconducting element.
Abstract:
Techniques for improving reliability of a superconducting fault current limiting system (SCFCL) are provided. In one particular exemplary embodiment, the techniques may be realized with a superconducting fault current limiting system (SCFCL) comprising: an input current lead and an output current lead, each current lead coupled to a power distribution/transmission network; a container; a superconductor contained in the container; a shunt disposed outside the container and in parallel with the superconductor; a cryogenic system configured to provide coolant into the container; and at least one sensor disposed near and configured to monitor at least one operating condition of at least one of the input current lead and the output current lead, the superconductor, and the shunt.
Abstract:
Techniques for protecting a superconducting (SC) article are disclosed. The techniques may be realized as an apparatus for protecting a superconducting (SC) article. The apparatus may comprise a porous sleeve configured to fit around the superconducting (SC) article. The porous sleeve may be made of non-conductive, dielectric material.
Abstract:
Techniques for reducing an electrical stress in a acceleration/deceleration system are disclosed. In one particular exemplary embodiment, the techniques may be realized as an acceleration/deceleration system. The acceleration/deceleration system may comprise an acceleration column including a plurality of electrodes having apertures through which a charged particle beam may pass. The acceleration/deceleration system may also comprise a plurality of voltage grading components respectively electrically coupled to the plurality of electrodes. The acceleration/deceleration system may further comprise a plurality of insulated conductors disposed proximate the plurality of voltage grading components to modify an electrical field about the plurality of voltage grading components.
Abstract:
Insulated conducting devices and related methods are disclosed. An insulated conducting device for a voltage structure comprises: a conductor connected to a voltage; and multiple insulation segments enclosing the conductor, the multiple insulation segments interfacing with one another.
Abstract:
Techniques for making high voltage connections are disclosed. In one particular exemplary embodiment, the techniques may be realized as an electrical switch. The electrical switch may comprise a component extending from a first electrical contact to a second electrical contact. The component may also comprise a non-conductive section and a conductive section. In a first mode of operation, at least a portion of the non-conductive section may be positioned between the two electrical contacts to insulate the two electrical contacts. In a second mode of operation, the conductive section may be positioned between the two electrical contacts to connect the two electrical contacts.
Abstract:
Techniques for terminal insulation for an ion implanter are disclosed. In one particular exemplary embodiment, the techniques may be realized as an ion implanter comprising a terminal structure defining a terminal cavity. The ion implanter may also comprise a grounded enclosure defining a grounded cavity and the terminal structure may be at least partially disposed within the grounded cavity. The ion implanter may further comprise an intermediate terminal structure disposed proximate an exterior portion of the terminal structure and at least partially disposed within the grounded cavity.
Abstract:
In accordance with the present invention, modular corona shields are employed in a HTS device to reduce the electric field surrounding the HTS device. In a exemplary embodiment a fault current limiter module in the insulation region of a cryogenic cooling system has at least one fault current limiter set which employs a first corona shield disposed along the top portion of the fault current limiter set and is electrically coupled to the fault current limiter set. A second corona shield is disposed along the bottom portion of the fault current limiter set and is electrically coupled to the fault current limiter set. An insulation barrier is disposed within the insulation region along at least one side of the fault current limiter set. The first corona shield and the second corona shield act together to reduce the electric field surrounding the fault limiter set when voltage is applied to the fault limiter set.