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公开(公告)号:US11756770B2
公开(公告)日:2023-09-12
申请号:US16333827
申请日:2017-09-08
Inventor: Simon Bulou , Patrick Choquet , Thomas Gaulain , Mathieu Gerard
IPC: H01J37/32 , C23C16/54 , C23C16/452 , C23C16/503 , H05H1/24
CPC classification number: H01J37/32348 , C23C16/452 , C23C16/503 , C23C16/545 , H01J37/3277 , H01J37/32357 , H01J37/32568 , H05H1/2443
Abstract: A post-discharge plasma coating device for a wired substrate comprising an inner tubular electrode on an inner tubular wall for receiving the substrate and a precursor moving axially in a working direction; an outer tubular electrode coaxial with, and surrounding, the inner tubular electrode. The inner and outer electrodes are configured to be supplied with an electrical power source for producing a plasma when a plasma gas is supplied between the electrodes and is thereby excited, the plasma excited gas flowing axially in the working direction and reacting with the precursor in a coating area at the end of the inner tubular wall in the direction. The inner tubular wall extends axially towards the coating area at least until, in various instances beyond, the end of the outer electrode, in the working direction and at least one dielectric tubular wall extends axially between the inner tubular electrode and the outer tubular electrode.
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2.
公开(公告)号:US20190259583A1
公开(公告)日:2019-08-22
申请号:US16333819
申请日:2017-09-14
Inventor: Kamal Baba , Nicolas Boscher , Simon Bulou , Patrick Choquet , Mathieu Gerard , Miguel Quesada Gonzalez
IPC: H01J37/32 , C23C16/40 , C23C16/448 , C23C16/511
Abstract: A plasma post-discharge deposition device for depositing crystalline metal oxide derivative on a substrate, the device comprising a gas source with a substrate inlet, a post-discharge deposition chamber with a substrate outlet, the substrate inlet and the substrate outlet defining a longitudinal central axis, and a dielectric tube placed between the gas source and the deposition chamber on the longitudinal central axis; configured to confine a plasma discharge and comprising a discharge zone lying on the internal surface of the dielectric tube and a central zone centred on the longitudinal central axis. The deposition device is remarkable in that the central zone is located at a distance comprised between 1 mm and 2.5 mm from the internal surface of the dielectric tube. Also a plasma-enhanced chemical vapour deposition method.
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公开(公告)号:US20190259577A1
公开(公告)日:2019-08-22
申请号:US16333827
申请日:2017-09-08
Inventor: Simon Bulou , Patrick Choquet , Thomas Gaulain , Mathieu Gerard
IPC: H01J37/32 , C23C16/452 , C23C16/503 , C23C16/54 , H05H1/24
Abstract: A post-discharge plasma coating device for a wired substrate comprising an inner tubular electrode on an inner tubular wall for receiving the substrate and a precursor moving axially in a working direction; an outer tubular electrode coaxial with, and surrounding, the inner tubular electrode. The inner and outer electrodes are configured to be supplied with an electrical power source for producing a plasma when a plasma gas is supplied between the electrodes and is thereby excited, the plasma excited gas flowing axially in the working direction and reacting with the precursor in a coating area at the end of the inner tubular wall in the direction. The inner tubular wall extends axially towards the coating area at least until, in various instances beyond, the end of the outer electrode, in the working direction and at least one dielectric tubular wall extends axially between the inner tubular electrode and the outer tubular electrode.
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