公开(公告)号：US20150273522A1

公开(公告)日：2015-10-01

申请号：US14434809

申请日：2013-10-02

Applicant: Luxembourg Institute of Science and Technology (LIST)

Inventor： Nicolas Boscher ,  David Duday ,  Patrick Choquet ,  Stephane Verdier

IPC: B05D1/00 ,  C09D5/00 ,  B05D5/08

CPC classification number: B05D1/62 ,  B05D5/00 ,  B05D5/08 ,  B05D2350/38 ,  C09D5/00 ,  C09D5/1681 ,  C09D183/04 ,  Y10T428/24355

Abstract: The invention is directed to a method for manufacturing a hydrophobic or superhydrophobic surface comprising the steps of: (a) providing a substrate with a surface roughness Ra between 0.1 and 1.0 μm and (b) exposing the substrate to a filamentary atmospheric pressure dielectric barrier discharge plasma which is fed by a reaction gas and siloxane-forming material in order to form a superhydrophobic siloxane layer over at least a portion of the surface of the substrate. Step (b) is operated with an electrical excitation frequency of 15,000 Hz to 35,000 Hz and a power density between 0.5 to 10 W·cm−2. The siloxane layer produced in step (b) shows thereby a micro-structure and a nano-structure with droplet “sticking” properties (high water sliding angle).

Abstract translation: 本发明涉及一种用于制造疏水或超疏水表面的方法，包括以下步骤：（a）提供表面粗糙度Ra在0.1和1.0μm之间的基底，和（b）将基底暴露于丝状大气压介质阻挡放电 由反应气体和硅氧烷形成材料进料的等离子体，以在衬底表面的至少一部分上形成超疏水硅氧烷层。 步骤（b）以15,000Hz至35,000Hz的电激励频率和0.5至10W·cm -2的功率密度操作。 在步骤（b）中制备的硅氧烷层由此显示具有液滴“粘附”性质（高水滑动角）的微结构和纳米结构。

公开(公告)号：US09999901B2

公开(公告)日：2018-06-19

申请号：US14434809

申请日：2013-10-02

Applicant: Luxembourg Institute of Science And Technology (LIST)

Inventor： Nicolas Boscher ,  David Duday ,  Patrick Choquet ,  Stephane Verdier

IPC: H05H1/24 ,  B05D1/00 ,  B05D5/00 ,  B05D5/08 ,  C09D5/00 ,  C09D5/16 ,  C09D183/04

CPC classification number: B05D1/62 ,  B05D5/00 ,  B05D5/08 ,  B05D2350/38 ,  C09D5/00 ,  C09D5/1681 ,  C09D183/04 ,  Y10T428/24355

Abstract: The invention is directed to a method for manufacturing a hydrophobic or superhydrophobic surface comprising the steps of: (a) providing a substrate with a surface roughness Ra between 0.1 and 1.0 μm and (b) exposing the substrate to a filamentary atmospheric pressure dielectric barrier discharge plasma which is fed by a reaction gas and siloxane-forming material in order to form a superhydrophobic siloxane layer over at least a portion of the surface of the substrate. Step (b) is operated with an electrical excitation frequency of 15,000 Hz to 35,000 Hz and a power density between 0.5 to 10 W·cm−2. The siloxane layer produced in step (b) shows thereby a micro-structure and a nano-structure with droplet “sticking” properties (high water sliding angle).

公开(公告)号：US10155843B2

公开(公告)日：2018-12-18

申请号：US15355267

申请日：2016-11-18

Applicant: Massachusetts Institute of Technology ,  Luxembourg Institute of Science and Technology

Inventor： Karen K. Gleason ,  Minghui Wang ,  Nicolas D. Boscher ,  Patrick Choquet

IPC: C08G61/12 ,  C23C16/505 ,  B05D1/00 ,  B01D69/12 ,  C01B3/50 ,  C08F34/00 ,  C08F134/00 ,  C08J5/22 ,  C08F234/00 ,  C09D145/00 ,  B01D53/22 ,  B01D67/00 ,  B01D69/14 ,  B01D71/00 ,  C01B21/04 ,  C01B13/02

Abstract: Described herein are facile, one-step initiated plasma enhanced chemical vapor deposition (iPECVD) methods of synthesizing hyper-thin (e.g., sub-100 nm) and flexible metal organic covalent network (MOCN) layers. As an example, the MOCN may be made from zinc tetraphenylporphyrin (ZnTPP) building units. When deposited on a membrane support, the MOCN layers demonstrate gas separation exceeding the upper bounds for multiple gas pairs while reducing the flux as compared to the support alone.

公开(公告)号：US20170297055A1

公开(公告)日：2017-10-19

申请号：US15515916

申请日：2015-08-24

Applicant: Luxembourg Institute of Science and Technology (LIST)

Inventor： Christophe Detrembleur ,  Cecile Vandeweerdt ,  Christelle Vreuls ,  Rodolphe Mauchauffe ,  Maryline Moreno-Couranjou ,  Nicolas Boscher ,  Patrick Choquet

IPC: B05D1/00 ,  B05D5/00 ,  C09D133/04 ,  C09D133/26

CPC classification number: B05D1/62 ,  B05D5/00 ,  C09D133/04 ,  C09D133/26

Abstract: The invention provides a solvent-free plasma method for depositing an adherent catechol and/or quinone functionalised layer to an inorganic or organic substrate from a precursor which comprises at least a quinone group; a protected or unprotected catechol group; a molecule substituted by a quinone group and/or a protected or unprotected catechol group; and/or a natural or synthetic derivative of a catechol group and/or a quinone group; wherein the quinone group is a 1,2-benzoquinone group and the catechol group is a 1,2-dihydroxybenzene group.

公开(公告)号：US20170050214A1

公开(公告)日：2017-02-23

申请号：US15307924

申请日：2015-05-06

Applicant: Luxembourg Institute of Science and Technology (LIST)

Inventor： Nicolas Boscher ,  Patrick Choquet ,  David Duday ,  Florian Hilt

IPC: B05D1/00 ,  H01J37/32

CPC classification number: B05D1/62 ,  B05D3/0486 ,  H01J37/32192 ,  H01J37/32348 ,  H01J2237/3321

Abstract: The invention provides a method for forming regular polymer thin films on a substrate using atmospheric plasma discharges. In particular, the method allows for the deposition of functional polymer thin films which require a high regularity and a linear polymer structure.

Abstract translation: 本发明提供了使用大气等离子体放电在衬底上形成规则聚合物薄膜的方法。 特别地，该方法允许需要高规则性和线性聚合物结构的功能聚合物薄膜的沉积。

公开(公告)号：US11756770B2

公开(公告)日：2023-09-12

申请号：US16333827

申请日：2017-09-08

Applicant: LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY (LIST)

Inventor： Simon Bulou ,  Patrick Choquet ,  Thomas Gaulain ,  Mathieu Gerard

IPC: H01J37/32 ,  C23C16/54 ,  C23C16/452 ,  C23C16/503 ,  H05H1/24

CPC classification number: H01J37/32348 ,  C23C16/452 ,  C23C16/503 ,  C23C16/545 ,  H01J37/3277 ,  H01J37/32357 ,  H01J37/32568 ,  H05H1/2443

Abstract: A post-discharge plasma coating device for a wired substrate comprising an inner tubular electrode on an inner tubular wall for receiving the substrate and a precursor moving axially in a working direction; an outer tubular electrode coaxial with, and surrounding, the inner tubular electrode. The inner and outer electrodes are configured to be supplied with an electrical power source for producing a plasma when a plasma gas is supplied between the electrodes and is thereby excited, the plasma excited gas flowing axially in the working direction and reacting with the precursor in a coating area at the end of the inner tubular wall in the direction. The inner tubular wall extends axially towards the coating area at least until, in various instances beyond, the end of the outer electrode, in the working direction and at least one dielectric tubular wall extends axially between the inner tubular electrode and the outer tubular electrode.

公开(公告)号：US10471465B2

公开(公告)日：2019-11-12

申请号：US15307924

申请日：2015-05-06

Applicant: Luxembourg Institute of Science and Technology (LIST)

Inventor： Nicolas Boscher ,  Patrick Choquet ,  David Duday ,  Florian Hilt

IPC: B05D1/00 ,  B05D3/04 ,  H01J37/32

Abstract: The invention provides a method for forming regular polymer thin films on a substrate using atmospheric plasma discharges. In particular, the method allows for the deposition of functional polymer thin films which require a high regularity and a linear polymer structure.

公开(公告)号：US20190259583A1

公开(公告)日：2019-08-22

申请号：US16333819

申请日：2017-09-14

Applicant: Luxembourg Institute Of Science And Technology (LIST)

Inventor： Kamal Baba ,  Nicolas Boscher ,  Simon Bulou ,  Patrick Choquet ,  Mathieu Gerard ,  Miguel Quesada Gonzalez

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/448 ,  C23C16/511

Abstract: A plasma post-discharge deposition device for depositing crystalline metal oxide derivative on a substrate, the device comprising a gas source with a substrate inlet, a post-discharge deposition chamber with a substrate outlet, the substrate inlet and the substrate outlet defining a longitudinal central axis, and a dielectric tube placed between the gas source and the deposition chamber on the longitudinal central axis; configured to confine a plasma discharge and comprising a discharge zone lying on the internal surface of the dielectric tube and a central zone centred on the longitudinal central axis. The deposition device is remarkable in that the central zone is located at a distance comprised between 1 mm and 2.5 mm from the internal surface of the dielectric tube. Also a plasma-enhanced chemical vapour deposition method.

公开(公告)号：US20190259577A1

公开(公告)日：2019-08-22

申请号：US16333827

申请日：2017-09-08

Applicant: LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Simon Bulou ,  Patrick Choquet ,  Thomas Gaulain ,  Mathieu Gerard

IPC: H01J37/32 ,  C23C16/452 ,  C23C16/503 ,  C23C16/54 ,  H05H1/24

Abstract: A post-discharge plasma coating device for a wired substrate comprising an inner tubular electrode on an inner tubular wall for receiving the substrate and a precursor moving axially in a working direction; an outer tubular electrode coaxial with, and surrounding, the inner tubular electrode. The inner and outer electrodes are configured to be supplied with an electrical power source for producing a plasma when a plasma gas is supplied between the electrodes and is thereby excited, the plasma excited gas flowing axially in the working direction and reacting with the precursor in a coating area at the end of the inner tubular wall in the direction. The inner tubular wall extends axially towards the coating area at least until, in various instances beyond, the end of the outer electrode, in the working direction and at least one dielectric tubular wall extends axially between the inner tubular electrode and the outer tubular electrode.

公开(公告)号：US10283322B2

公开(公告)日：2019-05-07

申请号：US15301001

申请日：2015-03-26

Applicant: H.E.F. ,  Luxembourg Institute of Science and Technology (LIST)

Inventor： Patrick Choquet ,  David Duday ,  Olivier Blandenet ,  Thierry Leon Lagarde

IPC: C23C16/00 ,  H01J37/32 ,  C23C16/511 ,  C23F1/00 ,  H01L21/306

Abstract: According to the process, the filiform component is continuously linearly moved through magnetic dipoles arranged opposite each other and around a tube constituting a treatment chamber, and the microwave energy is introduced between at least two magnetic dipoles.