公开(公告)号：US20240355597A1

公开(公告)日：2024-10-24

申请号：US18682869

申请日：2022-08-19

Applicant: Lam Research Corporation

Inventor： Chih-Yang CHANG ,  Raphael CASAES ,  Seokmin YUN ,  Shih-Yuan CHENG ,  Chih-Min LIN ,  Shuogang HUANG ,  Anurag Kumar MISHRA

IPC: H01J37/32 ,  H01L21/3213

CPC classification number: H01J37/32862 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32926 ,  H01J37/32082 ,  H01J2237/334 ,  H01L21/32136

Abstract: An apparatus for ion beam etching is provided. An ion extractor separates a plasma source chamber from a process chamber. A gas inlet provides gas to the plasma source chamber. An RF power system provides RF power to the plasma source chamber. A process gas source and cleaning gas mixture source are connected to the gas inlet.

公开(公告)号：US20230245865A1

公开(公告)日：2023-08-03

申请号：US18013429

申请日：2022-05-17

Applicant: LAM RESEARCH CORPORATION

Inventor： Chih-Min LIN ,  Shuogang HUANG ,  Seokmin YUN ,  Chih-Yang CHANG ,  Chih-Ming CHANG ,  Shih-Yuan CHENG

IPC: H01J37/32

CPC classification number: H01J37/32633 ,  H01J37/321 ,  H01J2237/3343

Abstract: A processing chamber includes a grid and a first disk. The grid includes a plurality of holes arranged in the processing chamber. The grid partitions the processing chamber into a first chamber in which plasma is generated and a second chamber in which a pedestal is configured to support a substrate. The first disk is arranged in the second chamber. The first disk is movable between the grid and the substrate when supported on the pedestal.