公开(公告)号：US08999733B2

公开(公告)日：2015-04-07

申请号：US14525228

申请日：2014-10-28

Applicant: Nanya Technology Corp.

Inventor： Chun-I Hsieh ,  Chang-Rong Wu ,  Neng-Tai Shih

IPC: H01L21/00 ,  H01L45/00

CPC classification number: H01L45/165 ,  H01L45/08 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1641

Abstract: An RRAM includes a resistive layer including a dielectric layer and surplus oxygen ions or nitrogen ions from a treatment on the dielectric layer after the dielectric layer is formed. When the RRAM is applied with a voltage, the oxygen ions or nitrogen ions occupy vacancies in the dielectric layer to increase resistance of the resistive layer. When the RRAM is applied with another voltage, the oxygen ions or nitrogen ions are removed from the vacancies to lower the resistance of the resistive layer.

Abstract translation: RRAM包括在形成介电层之后，在电介质层上的处理中包括电介质层和剩余的氧离子或氮离子的电阻层。 当RRAM被施加电压时，氧离子或氮离子占据电介质层中的空位以增加电阻层的电阻。 当RRAM施加另一电压时，从空位中去除氧离子或氮离子以降低电阻层的电阻。

公开(公告)号：US20150044852A1

公开(公告)日：2015-02-12

申请号：US14525228

申请日：2014-10-28

Applicant: NANYA TECHNOLOGY CORP.

Inventor： Chun-I Hsieh ,  Chang-Rong Wu ,  Neng-Tai Shih

IPC: H01L45/00

CPC classification number: H01L45/165 ,  H01L45/08 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1641

Abstract: An RRAM includes a resistive layer including a dielectric layer and surplus oxygen ions or nitrogen ions from a treatment on the dielectric layer after the dielectric layer is formed. When the RRAM is applied with a voltage, the oxygen ions or nitrogen ions occupy vacancies in the dielectric layer to increase resistance of the resistive layer. When the RRAM is applied with another voltage, the oxygen ions or nitrogen ions are removed from the vacancies to lower the resistance of the resistive layer.

Abstract translation: RRAM包括在形成介电层之后，在电介质层上的处理中包括电介质层和剩余的氧离子或氮离子的电阻层。 当RRAM被施加电压时，氧离子或氮离子占据电介质层中的空位以增加电阻层的电阻。 当RRAM施加另一电压时，从空位中去除氧离子或氮离子以降低电阻层的电阻。