Abstract:
A dicing tape integrated adhesive sheet including a substrate, a dicing tape in which a pressure-sensitive adhesive layer is laminated on the substrate, and an adhesive sheet formed on the pressure-sensitive adhesive layer, wherein a peeling force between the pressure-sensitive adhesive layer and the adhesive sheet is 0.02 to 0.5 N/20 mm obtained with a peeling test at a peeling rate of 10 m/minute and a peeling angle of 150°, and an absolute value of a peeling electrification voltage is 0.5 kV or less when the pressure-sensitive adhesive layer and the adhesive sheet are peeled off under conditions of the peeling test.
Abstract:
Provided is a thermosetting sheet for sealing which is used to seal an electronic device. One surface of the sheet has a surface roughness (Ra) of 3 μm or less before the sheet is cured.
Abstract:
The present invention provides an adhesive sheet used in manufacture of a semiconductor device, containing a filler having an average particle size of 0.3 μm or less and an acrylic resin, wherein the content of the filler is in the range of 20 to 45% by weight with respect to the entire adhesive sheet, and the content of the acrylic resin is in the range of 40 to 70% by weight with respect to entire resin components.
Abstract:
The present invention provides a dicing tape-integrated film for semiconductor back surface, including a film for flip chip type semiconductor back surface for protecting a back surface of a semiconductor element flip chip-connected onto an adherend, and a dicing tape, the dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material, the film for flip chip type semiconductor back surface being formed on the pressure-sensitive adhesive layer, in which the pressure-sensitive adhesive layer is a radiation-curable pressure-sensitive adhesive layer whose pressure-sensitive adhesive force toward the film for flip chip type semiconductor back surface is decreased by irradiation with a radiation ray.
Abstract:
The present invention relates to a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material having an asperities-formed surface, and a pressure-sensitive adhesive layer laminated on the base material, and a film for semiconductor back surface laminated on the pressure-sensitive adhesive layer of the dicing tape, in which the dicing tape has a haze of at most 45%.
Abstract:
The present invention relates to a film for semiconductor device production, which includes: a separator; and a plurality of adhesive layer-attached dicing tapes each including a dicing tape and an adhesive layer laminated on the dicing tape, which are laminated on the separator at a predetermined interval in such a manner that the adhesive layer attaches to the separator, in which the separator has a cut formed along the outer periphery of the dicing tape, and the depth of the cut is at most ⅔ of the thickness of the separator.
Abstract:
The present invention provides a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which the film for flip chip type semiconductor back surface contains a black pigment.
Abstract:
The present invention provides a dicing tape-integrated film for semiconductor back surface, which includes: a dicing tape including a base material and a pressure-sensitive adhesive layer provided on the base material; and a film for flip chip type semiconductor back surface provided on the pressure-sensitive adhesive layer, in which a peel force (temperature: 23° C., peeling angle: 180°, tensile rate: 300 mm/min) between the pressure-sensitive adhesive layer of the dicing tape and the film for flip chip type semiconductor back surface is from 0.05 N/20 mm to 1.5 N/20 mm.
Abstract:
An object of the present invention is to provide a method of marking a semiconductor element with which a semiconductor device can be manufactured effectively even in the case of marking every semiconductor element, and a method of manufacturing the semiconductor device. The present invention relates to a method of marking a semiconductor element, wherein marking is performed on a semiconductor element that is inserted in a pocket of a carrier that can be wound up in a reel state. The present invention relates to a method of manufacturing a semiconductor device comprising: a step 1 of inserting a semiconductor element in a pocket of a carrier that can be wound up in a reel state; and a step 2 of marking the semiconductor element that is inserted in the pocket.
Abstract:
The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film for flip chip type semiconductor back surface having a ratio of A/B falling within a range of 1 to 8×103 (%/GPa), in which A is an elongation ratio (%) of the film for flip chip type semiconductor back surface at 23° C. before thermal curing and B is a tensile storage modulus (GPa) of the film for flip chip type semiconductor back surface at 23° C. before thermal curing.