公开(公告)号：US20230123000A1

公开(公告)日：2023-04-20

申请号：US18082520

申请日：2022-12-15

Applicant: Psiquantum, Corp.

Inventor： Vimal Kumar Kamineni ,  Matteo Staffaroni ,  Faraz Najafi ,  Ann Melnichuk ,  George Kovall ,  Yong Liang

IPC: G02B6/136 ,  G02B6/132 ,  G02B6/122

Abstract: A device includes a substrate, a dielectric layer on the substrate, a waveguide within the dielectric layer, and a photodetector optically coupled to the waveguide. The photodetector is disposed above the waveguide layer and is monolithically integrated with the substrate. The photodetector is configured to operate at low temperatures, such as below about 50 K or about 20 K. In some embodiments, the monolithic photonic device includes thermal isolation structures and optical isolation structures. Techniques for manufacturing the monolithic photonic device, including the thermal isolation structures and optical isolation structures, are also described.

公开(公告)号：US20240402004A1

公开(公告)日：2024-12-05

申请号：US17940882

申请日：2022-09-08

Applicant: PsiQuantum Corp,

Inventor： Chia-Jung Chung ,  Faraz Najafi ,  George Kovall ,  Vitor R. Manfrinato ,  Vimal Kamineni ,  Mark Thompson ,  Syrus Ziai

IPC: G01J1/02 ,  G01J1/44 ,  H01B12/06

Abstract: A superconductor device includes a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen, and a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen, and superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

公开(公告)号：US11009387B2

公开(公告)日：2021-05-18

申请号：US16849829

申请日：2020-04-15

Applicant: PsiQuantum Corp

Inventor： Chia-Jung Chung ,  Faraz Najafi ,  George Kovall ,  Vitor R. Manfrinato ,  Vimal Kamineni ,  Mark Thompson ,  Syrus Ziai

IPC: G01J1/02 ,  G01J1/44 ,  H01B12/06

Abstract: A superconductor device according to some embodiments comprises a superconductor stack, which includes a superconductor layer and a silicon cap layer over the superconductor layer, the cap layer including amorphous silicon. The superconductor device further comprises a metal contact over a portion of the silicon cap layer and electrically-coupled to the superconductor layer. The metal contact comprises a core including a first metal, and an outer layer around the core that includes a second metal. The portion of the silicon cap layer is converted from silicon to a conductive compound including the second metal to provide low-resistance electrical coupling between the superconductor layer and the metal contact. The superconductor device further comprises a waveguide, and the first portion of the cap layer under the metal contact is at a sufficient lateral distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

公开(公告)号：US12264961B2

公开(公告)日：2025-04-01

申请号：US17940882

申请日：2022-09-08

Applicant: PsiQuantum Corp.

Inventor： Chia-Jung Chung ,  Faraz Najafi ,  George Kovall ,  Vitor R. Manfrinato ,  Vimal Kamineni ,  Mark Thompson ,  Syrus Ziai

IPC: G01J1/02 ,  G01J1/44 ,  H01B12/06

Abstract: A superconductor device includes a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen, and a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen, and superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

公开(公告)号：US20210239518A1

公开(公告)日：2021-08-05

申请号：US17232086

申请日：2021-04-15

Applicant: PsiQuantum Corp,

Inventor： Chia-Jung Chung ,  Faraz Najafi ,  George Kovall ,  Vitor R. Manfrinato ,  Vimal Kamineni ,  Mark Thompson ,  Syrus Ziai

IPC: G01J1/02 ,  G01J1/44 ,  H01B12/06

Abstract: A superconductor device is manufactured by depositing a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen; depositing a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen; depositing the superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate; and depositing a silicon cap layer over the superconductor layer. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

公开(公告)号：US11441941B2

公开(公告)日：2022-09-13

申请号：US17232086

申请日：2021-04-15

Applicant: PsiQuantum Corp

Inventor： Chia-Jung Chung ,  Faraz Najafi ,  George Kovall ,  Vitor R. Manfrinato ,  Vimal Kamineni ,  Mark Thompson ,  Syrus Ziai

IPC: G01J1/02 ,  G01J1/44 ,  H01B12/06

Abstract: A superconductor device is manufactured by depositing a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen; depositing a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen; depositing the superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate; and depositing a silicon cap layer over the superconductor layer. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

公开(公告)号：US20200333179A1

公开(公告)日：2020-10-22

申请号：US16849829

申请日：2020-04-15

Applicant: PsiQuantum Corp,

Inventor： Chia-Jung Chung ,  Faraz Najafi ,  George Kovall ,  Vitor R. Manfrinato ,  Vimal Kamineni ,  Mark Thompson ,  Syrus Ziai

IPC: G01J1/02 ,  H01B12/06 ,  G01J1/44

Abstract: A superconductor device according to some embodiments comprises a superconductor stack, which includes a superconductor layer and a silicon cap layer over the superconductor layer, the cap layer including amorphous silicon. The superconductor device further comprises a metal contact over a portion of the silicon cap layer and electrically-coupled to the superconductor layer. The metal contact comprises a core including a first metal, and an outer layer around the core that includes a second metal. The portion of the silicon cap layer is converted from silicon to a conductive compound including the second metal to provide low-resistance electrical coupling between the superconductor layer and the metal contact. The superconductor device further comprises a waveguide, and the first portion of the cap layer under the metal contact is at a sufficient lateral distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.