-
公开(公告)号：US12253483B1
公开(公告)日：2025-03-18
申请号：US18110848
申请日：2023-02-16
Applicant: PsiQuantum Corp.
Inventor： Faraz Najafi , Chia-Jung Chung
IPC: G01N23/207 , H10N60/01
Abstract: The various embodiments described herein include methods for manufacturing superconductor devices. A method for manufacturing superconductors may include: (i) generating spectra data from a first superconductor device; (iii) identifying a first peak ratio between a first phase peak and a second phase peak in the spectra data; (iv) generating additional spectra data from a second superconductor device; (v) identifying a second peak ratio of the additional spectra data from the second superconductor device; (vi) adjusting a manufacturing parameter based on the first peak ratio and the second peak ratio; and (vii) manufacturing a third superconductor device based on the adjusted manufacturing parameter.
-
公开(公告)号：US20240402004A1
公开(公告)日：2024-12-05
申请号：US17940882
申请日：2022-09-08
Applicant: PsiQuantum Corp,
Inventor： Chia-Jung Chung , Faraz Najafi , George Kovall , Vitor R. Manfrinato , Vimal Kamineni , Mark Thompson , Syrus Ziai
Abstract: A superconductor device includes a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen, and a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen, and superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.
-
公开(公告)号：US11009387B2
公开(公告)日：2021-05-18
申请号：US16849829
申请日：2020-04-15
Applicant: PsiQuantum Corp
Inventor： Chia-Jung Chung , Faraz Najafi , George Kovall , Vitor R. Manfrinato , Vimal Kamineni , Mark Thompson , Syrus Ziai
Abstract: A superconductor device according to some embodiments comprises a superconductor stack, which includes a superconductor layer and a silicon cap layer over the superconductor layer, the cap layer including amorphous silicon. The superconductor device further comprises a metal contact over a portion of the silicon cap layer and electrically-coupled to the superconductor layer. The metal contact comprises a core including a first metal, and an outer layer around the core that includes a second metal. The portion of the silicon cap layer is converted from silicon to a conductive compound including the second metal to provide low-resistance electrical coupling between the superconductor layer and the metal contact. The superconductor device further comprises a waveguide, and the first portion of the cap layer under the metal contact is at a sufficient lateral distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.
-
Patent Agency Ranking
公开(公告)号：US11441941B2
公开(公告)日：2022-09-13
申请号：US17232086
申请日：2021-04-15
Applicant: PsiQuantum Corp
Inventor： Chia-Jung Chung , Faraz Najafi , George Kovall , Vitor R. Manfrinato , Vimal Kamineni , Mark Thompson , Syrus Ziai
Abstract: A superconductor device is manufactured by depositing a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen; depositing a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen; depositing the superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate; and depositing a silicon cap layer over the superconductor layer. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.
-
公开(公告)号：US20200333179A1
公开(公告)日：2020-10-22
申请号：US16849829
申请日：2020-04-15
Applicant: PsiQuantum Corp,
Inventor： Chia-Jung Chung , Faraz Najafi , George Kovall , Vitor R. Manfrinato , Vimal Kamineni , Mark Thompson , Syrus Ziai
Abstract: A superconductor device according to some embodiments comprises a superconductor stack, which includes a superconductor layer and a silicon cap layer over the superconductor layer, the cap layer including amorphous silicon. The superconductor device further comprises a metal contact over a portion of the silicon cap layer and electrically-coupled to the superconductor layer. The metal contact comprises a core including a first metal, and an outer layer around the core that includes a second metal. The portion of the silicon cap layer is converted from silicon to a conductive compound including the second metal to provide low-resistance electrical coupling between the superconductor layer and the metal contact. The superconductor device further comprises a waveguide, and the first portion of the cap layer under the metal contact is at a sufficient lateral distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.
-
公开(公告)号：US12264961B2
公开(公告)日：2025-04-01
申请号：US17940882
申请日：2022-09-08
Applicant: PsiQuantum Corp.
Inventor： Chia-Jung Chung , Faraz Najafi , George Kovall , Vitor R. Manfrinato , Vimal Kamineni , Mark Thompson , Syrus Ziai
Abstract: A superconductor device includes a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen, and a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen, and superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.
-
公开(公告)号：US11719653B1
公开(公告)日：2023-08-08
申请号：US16575282
申请日：2019-09-18
Applicant: PsiQuantum Corp.
Inventor： Faraz Najafi , Chia-Jung Chung
IPC: H01L39/24 , G01N23/207
CPC classification number: G01N23/2076 , H01L39/2435 , H01L39/2438
Abstract: The various embodiments described herein include methods for manufacturing superconductor devices. In some embodiments, a method of manufacturing a superconductor includes: (1) manufacturing a first superconductor device; (2) characterizing the first superconductor device, including: (a) obtaining x-ray diffraction spectra of the first superconductor device; and (b) identifying a ratio of a first cubic phase peak to a second cubic phase peak in the x-ray diffraction spectra; (3) adjusting a manufacturing parameter based on the identified ratio; and (4) manufacturing a second superconductor device with the adjusted manufacturing parameter.
-
公开(公告)号：US20210239518A1
公开(公告)日：2021-08-05
申请号：US17232086
申请日：2021-04-15
Applicant: PsiQuantum Corp,
Inventor： Chia-Jung Chung , Faraz Najafi , George Kovall , Vitor R. Manfrinato , Vimal Kamineni , Mark Thompson , Syrus Ziai
Abstract: A superconductor device is manufactured by depositing a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen; depositing a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen; depositing the superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate; and depositing a silicon cap layer over the superconductor layer. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.
-
-
-
-
-
-
-
Search Results
8
records
(took 0.012 seconds)
