公开(公告)号：US12264961B2

公开(公告)日：2025-04-01

申请号：US17940882

申请日：2022-09-08

Applicant: PsiQuantum Corp.

Inventor： Chia-Jung Chung ,  Faraz Najafi ,  George Kovall ,  Vitor R. Manfrinato ,  Vimal Kamineni ,  Mark Thompson ,  Syrus Ziai

IPC: G01J1/02 ,  G01J1/44 ,  H01B12/06

Abstract: A superconductor device includes a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen, and a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen, and superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

公开(公告)号：US20210239518A1

公开(公告)日：2021-08-05

申请号：US17232086

申请日：2021-04-15

Applicant: PsiQuantum Corp,

Inventor： Chia-Jung Chung ,  Faraz Najafi ,  George Kovall ,  Vitor R. Manfrinato ,  Vimal Kamineni ,  Mark Thompson ,  Syrus Ziai

IPC: G01J1/02 ,  G01J1/44 ,  H01B12/06

Abstract: A superconductor device is manufactured by depositing a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen; depositing a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen; depositing the superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate; and depositing a silicon cap layer over the superconductor layer. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

公开(公告)号：US20250087959A1

公开(公告)日：2025-03-13

申请号：US18957743

申请日：2024-11-23

Applicant: Psiquantum, Corp.

Inventor： Eric Dudley ,  Yong Liang ,  Faraz Najafi ,  Vimal Kamineni ,  Ann Melnichuk

IPC: H01S3/067 ,  G02B6/12 ,  G02B6/122

Abstract: A device includes a substrate and a dielectric layer on the substrate. The device also includes a light sensitive component in the dielectric layer and a trench having a first portion disposed in the substrate and a second portion disposed in the dielectric layer. The trench is adjacent the light sensitive component and includes an adhesion layer in the first portion and the second portion, an optical isolation layer on the adhesion layer, and a first fill material in the first portion and a second fill material in the second portion. The first fill material is characterized by a first coefficient of thermal expansion (CTE) that matches a CTE of the substrate and the second fill material is characterized by a second CTE that matches a CTE of the dielectric layer.

公开(公告)号：US12176672B2

公开(公告)日：2024-12-24

申请号：US17239085

申请日：2021-04-23

Applicant: Psiquantum, Corp.

Inventor： Eric Dudley ,  Yong Liang ,  Faraz Najafi ,  Vimal Kamineni ,  Ann Melnichuk

IPC: H01S3/067 ,  G02B6/122 ,  G02B6/12

Abstract: An optical device includes a substrate, a dielectric layer on the substrate, a waveguide within the dielectric layer, a light sensitive component (e.g., a photodetector) in the dielectric layer and coupled to the waveguide, and a plurality of light isolation structures in at least one of the substrate or the dielectric layer and configured to prevent stray light from reaching the light sensitive component. In some embodiments, a light isolation structure in the plurality of light isolation structures includes two opposing sidewalls and a filling material between the two opposing sidewalls. The two opposing sidewalls include an optical isolation layer. The filling material is characterized by a coefficient of thermal expansion (CTE) matching a CTE of at least one of the substrate or the dielectric layer.

公开(公告)号：US11441941B2

公开(公告)日：2022-09-13

申请号：US17232086

申请日：2021-04-15

Applicant: PsiQuantum Corp

Inventor： Chia-Jung Chung ,  Faraz Najafi ,  George Kovall ,  Vitor R. Manfrinato ,  Vimal Kamineni ,  Mark Thompson ,  Syrus Ziai

IPC: G01J1/02 ,  G01J1/44 ,  H01B12/06

Abstract: A superconductor device is manufactured by depositing a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen; depositing a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen; depositing the superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate; and depositing a silicon cap layer over the superconductor layer. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

公开(公告)号：US20200333179A1

公开(公告)日：2020-10-22

申请号：US16849829

申请日：2020-04-15

Applicant: PsiQuantum Corp,

Inventor： Chia-Jung Chung ,  Faraz Najafi ,  George Kovall ,  Vitor R. Manfrinato ,  Vimal Kamineni ,  Mark Thompson ,  Syrus Ziai

IPC: G01J1/02 ,  H01B12/06 ,  G01J1/44

Abstract: A superconductor device according to some embodiments comprises a superconductor stack, which includes a superconductor layer and a silicon cap layer over the superconductor layer, the cap layer including amorphous silicon. The superconductor device further comprises a metal contact over a portion of the silicon cap layer and electrically-coupled to the superconductor layer. The metal contact comprises a core including a first metal, and an outer layer around the core that includes a second metal. The portion of the silicon cap layer is converted from silicon to a conductive compound including the second metal to provide low-resistance electrical coupling between the superconductor layer and the metal contact. The superconductor device further comprises a waveguide, and the first portion of the cap layer under the metal contact is at a sufficient lateral distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

公开(公告)号：US20240402004A1

公开(公告)日：2024-12-05

申请号：US17940882

申请日：2022-09-08

Applicant: PsiQuantum Corp,

Inventor： Chia-Jung Chung ,  Faraz Najafi ,  George Kovall ,  Vitor R. Manfrinato ,  Vimal Kamineni ,  Mark Thompson ,  Syrus Ziai

IPC: G01J1/02 ,  G01J1/44 ,  H01B12/06

Abstract: A superconductor device includes a barrier layer over a substrate including silicon, the barrier layer including silicon and nitrogen, and a seed layer for a superconductor layer over the barrier layer, the seed layer including aluminum and nitrogen, and superconductor layer over the seed layer, the superconductor layer including a layer of a superconductor material, the barrier layer serving as an oxidation barrier between the layer superconductor material and the substrate. In some embodiments, the superconductor device includes a waveguide and a metal contact at a sufficient distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.

公开(公告)号：US20210242651A1

公开(公告)日：2021-08-05

申请号：US17239085

申请日：2021-04-23

Applicant: Psiquantum, Corp.

Inventor： Eric Dudley ,  Yong Liang ,  Faraz Najafi ,  Vimal Kamineni ,  Ann Melnichuk

IPC: H01S3/067 ,  G02B6/122

Abstract: An optical device includes a substrate, a dielectric layer on the substrate, a waveguide within the dielectric layer, a light sensitive component (e.g., a photodetector) in the dielectric layer and coupled to the waveguide, and a plurality of light isolation structures in at least one of the substrate or the dielectric layer and configured to prevent stray light from reaching the light sensitive component. In some embodiments, a light isolation structure in the plurality of light isolation structures includes two opposing sidewalls and a filling material between the two opposing sidewalls. The two opposing sidewalls include an optical isolation layer. The filling material is characterized by a coefficient of thermal expansion (CTE) matching a CTE of at least one of the substrate or the dielectric layer.

公开(公告)号：US11009387B2

公开(公告)日：2021-05-18

申请号：US16849829

申请日：2020-04-15

Applicant: PsiQuantum Corp

Inventor： Chia-Jung Chung ,  Faraz Najafi ,  George Kovall ,  Vitor R. Manfrinato ,  Vimal Kamineni ,  Mark Thompson ,  Syrus Ziai

IPC: G01J1/02 ,  G01J1/44 ,  H01B12/06

Abstract: A superconductor device according to some embodiments comprises a superconductor stack, which includes a superconductor layer and a silicon cap layer over the superconductor layer, the cap layer including amorphous silicon. The superconductor device further comprises a metal contact over a portion of the silicon cap layer and electrically-coupled to the superconductor layer. The metal contact comprises a core including a first metal, and an outer layer around the core that includes a second metal. The portion of the silicon cap layer is converted from silicon to a conductive compound including the second metal to provide low-resistance electrical coupling between the superconductor layer and the metal contact. The superconductor device further comprises a waveguide, and the first portion of the cap layer under the metal contact is at a sufficient lateral distance from the waveguide to prevent optical coupling between the metal contact and the waveguide.