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公开(公告)号:US11951457B2
公开(公告)日:2024-04-09
申请号:US17568657
申请日:2022-01-04
Applicant: QATAR UNIVERSITY
Inventor: Sardar Ali , Dharmesh Kumar , Ahmed Gamal , Mahmoud M. Khader , Muftah El-Naas
CPC classification number: B01J23/755 , B01J21/08 , B01J35/0013 , B01J35/023 , B01J37/036 , B01J37/04 , B01J37/082
Abstract: Provided herein is a novel silica-supported nickel nanocomposite and a novel one-pot solution combustion synthesis of that nanocomposite. The method allows the synthesis of small size nickel nanoparticles (e.g., 3 nm to 40 nm) for which a considerable percentage of nickel is inserted into silica, experiencing strong metal-support interaction. These exceptional physicochemical properties make them desirable for various industrial applications, such as electronic, heterogeneous catalysis as well as conversion and storage of energy.
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公开(公告)号:US11311860B2
公开(公告)日:2022-04-26
申请号:US16035448
申请日:2018-07-13
Applicant: Qatar University
Inventor: Mohammed J. Al-Marri , Mohammed Ali H. Salah Saad , Mahmoud M. Khader , Sardar Ali , Ahmed Gamal Abdelmoneim
Abstract: This invention relates to a novel nickel catalyst and a novel one-pot solution combustion synthesis of that catalyst for the CO2 reforming and low temperature steam reformation of methane. The novel nickel catalyst has exceptional activity for dry reforming and steam reforming of methane, and exhibits excellent resilience to deactivation due to carbon formation.
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公开(公告)号:US09911889B2
公开(公告)日:2018-03-06
申请号:US15699436
申请日:2017-09-08
Applicant: QATAR UNIVERSITY , TEXAS A&M UNIVERSITY SYSTEM
Inventor: Aditya Chandra Sai Ratcha , Amit Verma , Reza Nekovei , Mahmoud M. Khader
IPC: H01L21/74 , H01L31/11 , H01L31/18 , H01L31/0352 , H01L31/0304
CPC classification number: H01L31/1105 , H01L31/03046 , H01L31/035263 , H01L31/03529 , H01L31/1844
Abstract: Certain embodiments of the present invention may be directed to a transistor structure. The transistor structure may include a semiconductor substrate. The semiconductor substrate may include a drift region, a collector region, an emitter region, and a lightly-doped/undoped region. The lightly-doped/undoped region may be lightly-doped and/or undoped. The transistor structure may also include a heterostructure. The heterostructure forms a heterojunction with the lightly-doped/undoped region. The transistor structure may also include a collector terminal. The collector terminal is in contact with the collector region. The transistor structure may also include a gate terminal. The gate terminal is in contact with the heterostructure. The transistor structure may also include an emitter terminal. The emitter terminal is in contact with the lightly-doped/undoped region and the emitter region.
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公开(公告)号:US11458457B2
公开(公告)日:2022-10-04
申请号:US15576208
申请日:2016-11-23
Applicant: QATAR UNIVERSITY
Inventor: Mahmoud M. Khader , Mohammed J. Al-Marri , Sardar Ali , Ahmed Gamal Abdelmoneim , Anand Kumar
IPC: B01J23/10 , B01D53/94 , B01J35/00 , B01J21/04 , B01J23/44 , B01J35/10 , B01D53/86 , B01J37/16 , B01J23/63 , B01J37/08 , F01N3/10
Abstract: This invention relates to a novel palladium catalyst for the substantially complete oxidative removal of methane from exhaust streams at low operating temperatures compared to other current palladium catalysts and to methods of preparing the catalyst. Use of the catalyst to remove methane from vehicle exhaust streams, crude oil production and processing exhaust streams, petroleum refining exhaust streams and natural gas production and processing exhaust streams.
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公开(公告)号:US20190099744A1
公开(公告)日:2019-04-04
申请号:US16035448
申请日:2018-07-13
Applicant: Qatar University
Inventor: Mohammed J. Al-Marri , Mohammed Ali H. Salah Saad , Mahmoud M. Khader , Sardar Ali , Ahmed Gamal Abdelmoneim
Abstract: This invention relates to a novel nickel catalyst and a novel one-pot solution combustion synthesis of that catalyst for the CO2 reforming and low temperature steam reformation of methane. The novel nickel catalyst has exceptional activity for dry reforming and steam reforming of methane, and exhibits excellent resilience to deactivation due to carbon formation.
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公开(公告)号:US09793430B1
公开(公告)日:2017-10-17
申请号:US15149979
申请日:2016-05-09
Applicant: QATAR UNIVERSITY , TEXAS A&M UNIVERSITY SYSTEM
Inventor: Aditya Chandra Sai Ratcha , Amit Verma , Reza Nekovei , Mahmoud M. Khader
IPC: H01L29/66 , H01L31/11 , H01L31/0304 , H01L31/0352 , H01L31/18
CPC classification number: H01L31/1105 , H01L31/03046 , H01L31/035263 , H01L31/03529 , H01L31/1844
Abstract: Certain embodiments of the present invention may be directed to a transistor structure. The transistor structure may include a semiconductor substrate. The semiconductor substrate may include a drift region, a collector region, an emitter region, and a lightly-doped/undoped region. The lightly-doped/undoped region may be lightly-doped and/or undoped. The transistor structure may also include a heterostructure. The heterostructure forms a heterojunction with the lightly-doped/undoped region. The transistor structure may also include a collector terminal. The collector terminal is in contact with the collector region. The transistor structure may also include a gate terminal. The gate terminal is in contact with the heterostructure. The transistor structure may also include an emitter terminal. The emitter terminal is in contact with the lightly-doped/undoped region and the emitter region.
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