公开(公告)号：US20190309411A1

公开(公告)日：2019-10-10

申请号：US16393123

申请日：2019-04-24

Applicant: RASIRC, Inc.

Inventor： Jeffrey J. Spiegelman ,  Daniel Alvarez, JR. ,  Jian Yang ,  Russell J. Holmes ,  Edward Heinlein ,  Christopher Ramos ,  Jeremiah Trammel

IPC: C23C16/02 ,  C01B21/068 ,  C01B21/076 ,  C23C16/34 ,  C23C16/455

Abstract: A method and chemical delivery system are provided for low temperature atomic layer deposition. Thus, methods of forming nitrogen-containing thin films by atomic layer deposition using a substantially water free hydrazine gas and plasma treatment are provided.

公开(公告)号：US10150048B2

公开(公告)日：2018-12-11

申请号：US15487924

申请日：2017-04-14

Applicant: RASIRC, Inc.

Inventor： Daniel Alvarez, Jr. ,  Russell J. Holmes ,  Jeffrey J. Spiegelman ,  Edward Heinlein ,  Christopher Ramos ,  Jeremiah Trammel

IPC: B01D19/00 ,  B01B1/00 ,  C23C16/455 ,  C01B15/017 ,  C23C16/448

Abstract: Provided herein are methods, systems, and devices for the vapor phase delivery of high purity process gases to a critical process or application.

公开(公告)号：US20190070521A1

公开(公告)日：2019-03-07

申请号：US16181174

申请日：2018-11-05

Applicant: RASIRC, Inc.

Inventor： Daniel Alvarez, JR. ,  Russell J. Holmes ,  Jeffrey J. Spiegelman ,  Edward Heinlein ,  Christopher Ramos ,  Jeremiah Trammel

IPC: B01B1/00 ,  C23C16/448 ,  C01B15/017 ,  B01D19/00

Abstract: Provided herein are methods, systems, and devices for the vapor phase delivery of high purity process gases to a critical process or application.

公开(公告)号：US20170216738A1

公开(公告)日：2017-08-03

申请号：US15487924

申请日：2017-04-14

Applicant: RASIRC, Inc.

Inventor： Daniel Alvarez, JR. ,  Russell J. Holmes ,  Jeffrey J. Spiegelman ,  Edward Heinlein ,  Christopher Ramos ,  Jeremiah Trammel

IPC: B01B1/00 ,  C23C16/455

CPC classification number: B01B1/005 ,  B01D19/0031 ,  B01D19/0068 ,  B01D19/0073 ,  C01B15/017 ,  C23C16/448

Abstract: Provided herein are methods, systems, and devices for the vapor phase delivery of high purity process gases to a critical process or application.