公开(公告)号：US08785851B2

公开(公告)日：2014-07-22

申请号：US13900589

申请日：2013-05-23

Applicant: Riken

Inventor： Toshiaki Tanigaki ,  Shinji Aizawa ,  Tsuyoshi Matsuda ,  Ken Harada ,  Yoshio Takahashi

IPC: H01J37/26 ,  H01J37/04 ,  G01B15/00

CPC classification number: H01J37/261 ,  H01J37/295 ,  H01J2237/026 ,  H01J2237/1514 ,  H01J2237/2614

Abstract: In an interference electron microscope, a first electron biprism is disposed between an acceleration tube and an illumination-lens system, a mask is disposed between the acceleration tube and the first electron biprism, and the first electron biprism is arranged in a shadow that the mask forms. Current densities of first and second electron beams on a parabolic surface of an objective lens system where a sample is positioned are controlled by a control system by an optical action of the illumination-lens system, the mask is imaged on the parabolic surface of the objective lens system, and an electro-optical length between the first electron biprism and the parabolic surface of the objective lens where the sample is positioned is controlled without generating Fresnel fringes on a sample surface from the mask and the first electron biprism.

Abstract translation: 在干涉电子显微镜中，第一电子双棱镜设置在加速管与照明透镜系统之间，掩模设置在加速管与第一电子双棱镜之间，第一电子双棱镜被布置成荫罩 形式。 通过照明透镜系统的光学作用由控制系统控制样品所在的物镜系统的抛物面上的第一和第二电子束的电流密度，掩模被成像在物镜的抛物线表面上 透镜系统，并且控制样品所在的第一电子双棱镜和物镜的抛物线表面之间的电光长度，而不在掩模和第一电子双棱镜的样品表面上产生菲涅尔条纹。

公开(公告)号：US08772715B2

公开(公告)日：2014-07-08

申请号：US13869999

申请日：2013-04-25

Applicant: Riken ,  Hitachi, Ltd.

Inventor： Toshiaki Tanigaki ,  Shinji Aizawa ,  Tsuyoshi Matsuda ,  Ken Harada ,  Yoshio Takahashi

IPC: H01J37/26 ,  H01J37/04 ,  G01B15/00

CPC classification number: H01J37/22 ,  H01J37/295 ,  H01J2237/2614

Abstract: An electron beam device includes a first electron biprism between an acceleration tube and irradiation lens systems, and an electron biprism in the image forming lens system. The first electron biprism splits the electron beam into first and second electron beams, radiated to differently positioned first and second regions on an objective plane of an objective lens system having a specimen perpendicular to an optical axis. The first and second electron beams are superposed on the observation plane by the electron biprism of the image forming lens system. The superposed region is observed or recorded. Optical action of the irradiation lens system controls each current density of the first and second electron beams on the objective plane having the specimen, and distance on electron optics between the first electron biprism and the objective plane of the objective lens system having the specimen.

Abstract translation: 电子束装置包括加速管和照射透镜系统之间的第一电子双棱镜，以及成像透镜系统中的电子双棱镜。 第一电子双棱镜将电子束分裂成第一和第二电子束，辐射到具有垂直于光轴的样本的物镜系统的物镜平面上的不同位置的第一和第二区域。 第一和第二电子束通过图像形成透镜系统的电子双棱镜重叠在观察平面上。 观察或记录重叠区域。 照射透镜系统的光学作用控制具有样本的物镜上的第一和第二电子束的每个电流密度，以及在具有该样本的物镜系统的第一电子双棱镜和物镜平面之间的电子光学上的距离。