公开(公告)号：US20220307974A1

公开(公告)日：2022-09-29

申请号：US17619560

申请日：2020-06-19

Applicant: SENSIRION AG

Inventor： Alexander DORODNYY ,  Alexander LOCHBAUM ,  Jürg LEUTHOLD ,  Lukas BÜRGI ,  Silvio GRAF

IPC: G01N21/3504 ,  G01J3/42

Abstract: A photodetector comprises a substrate, and supported by the substrate, a configuration to act as optical resonator and to absorb incident radiation of a band, including infrared. The configuration comprises: a resonant frontside structure facing the incident radiation; a backside structure and arranged between the frontside structure and the substrate; and a layer of an active material made from a semiconducting material, and configured to convert at least part of the incident radiation of the band into charge carriers. The frontside structure or the backside structure is made from electrically conducting material and is in contact with the active material. The configuration is configured to selectively absorb the incident radiation of the band. The frontside structure or the backside structure that is in contact with the active material is contacted by electrical contacts for sensing the charge carriers in the active material. The active material comprises amorphous or polycrystalline material.

公开(公告)号：US20180356290A1

公开(公告)日：2018-12-13

申请号：US15778753

申请日：2015-11-26

Applicant: Sensirion AG

Inventor： Martin WINGER ,  Marc VON WALDKIRCH ,  Matthias STREIFF ,  Alexander LOCHBAUM ,  Jürg LEUTHOLD

IPC: G01J5/08 ,  G01J5/10 ,  G01J5/06 ,  G01J3/427 ,  G01N21/3504

CPC classification number: G01J5/0853 ,  G01J3/42 ,  G01J3/427 ,  G01J5/061 ,  G01J5/10 ,  G01J2005/106 ,  G01N21/3504

Abstract: An infrared device comprises a substrate (1), and arranged on or in the substrate (1) a configuration (3) for one of selectively emitting and selectively absorbing infrared radiation of a band, the configuration (3) comprising a pattern made from an electrically conducting material on a first level (L1), an electrically conducting film (33) on a second level (L2), and a dielectric layer (24) between the pattern and the film (33). One or more of a heater (4) for heating the configuration (3), and a thermal sensor (5) arranged for sensing the selective infrared radiation of the band absorbed by the configuration (3) on or in the substrate.